EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR
Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION...
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Ageev, V [mitwirkender] Akchulakov, M. T [mitwirkender] Albert, M [mitwirkender] Albrecht, J [mitwirkender] Aleksandrov, L. N [mitwirkender] Aleshin, A. N [mitwirkender] Aliev, V. Sh [mitwirkender] Antropov, A. lf [mitwirkender] Arbuzov, V. Y [mitwirkender] Artsimovich, M. V [mitwirkender] Ascheron, C [mitwirkender] Bachmann, T [mitwirkender] Baghaev, V. N [mitwirkender] Baither, D [mitwirkender] Bakaj, A. S [mitwirkender] Balandin, V. Iu [mitwirkender] Baljtjba, V. I [mitwirkender] Baltramiejünas, R [mitwirkender] Bandurin, Yu. A [mitwirkender] Banisch, R [mitwirkender] Barabanenkov, M. Y [mitwirkender] Baranov, A. N [mitwirkender] Bartl, Rolf-Reiner [mitwirkender] Bartsch, H [mitwirkender] Baryakhtar, I.V [mitwirkender] Bayadilov, E. M [mitwirkender] Becker, S [mitwirkender] Belousov, V. T [mitwirkender] Benyagoub, A [mitwirkender] Berova, D [mitwirkender] Bertolotti, M [mitwirkender] Bialoskozewski, J [mitwirkender] Bischoff, L [mitwirkender] Blochwitz, C [mitwirkender] Bobeth, M [mitwirkender] Bobitski, Ya. V [mitwirkender] Bogdenovich, B.Yu [mitwirkender] Brauns, B [mitwirkender] Budinavičius, J [mitwirkender] Bugiel, E [mitwirkender] Bumay, Yu. A [mitwirkender] Burenkov, A. F [mitwirkender] Busin, Y. G [mitwirkender] Byzhnitsyn, A. B [mitwirkender] Bärinann, J [mitwirkender] Cestari, C [mitwirkender] Checha, V. P [mitwirkender] Chelnokov, V. E [mitwirkender] Chernakova, A [mitwirkender] Chernenko, S. V [mitwirkender] Choi, G. H [mitwirkender] Choi, Kong Hyon [mitwirkender] Choupyatova, L [mitwirkender] Chudoba, T [mitwirkender] Cháb, V [mitwirkender] Claverie, A [mitwirkender] Climent, A [mitwirkender] Craciun, V [mitwirkender] Dancheva, E [mitwirkender] Danilin, A.B [mitwirkender] Danilovich, J [mitwirkender] De Veirman, Ann [mitwirkender] Deltschew, R [mitwirkender] Dement'ev, B.P [mitwirkender] Demkovich, I. V [mitwirkender] Deshkovskaya, A. A [mitwirkender] Dietsch, R [mitwirkender] Dietze, H. J [mitwirkender] Dilk, I. A [mitwirkender] Domanevskii, D. S [mitwirkender] Domanewskii, D. S [mitwirkender] Domorod, N. E [mitwirkender] Donnet, C [mitwirkender] Drako, V. M [mitwirkender] Drandarov, Novak [mitwirkender] Drechsler, L [mitwirkender] Driesel, W [mitwirkender] Drigo, A. V [mitwirkender] Dudonis, J [mitwirkender] Dvurechenskii, A. V [mitwirkender] Dvurechenskii, A.V [mitwirkender] Dvurechensky, A. V [mitwirkender] Emiraliev, A [mitwirkender] Eolikaaakas, V. S [mitwirkender] Erfurth, M [mitwirkender] Erikhodko, I. I [mitwirkender] Evseev, B. S [mitwirkender] Feodorov, A. N [mitwirkender] Ferrari, A [mitwirkender] Feudel, T [mitwirkender] Filimonov, Yu. V [mitwirkender] Fischer, K [mitwirkender] Furmonavičius, D [mitwirkender] Gancharik, T. S [mitwirkender] Garapadskii, A. A [mitwirkender] Gavrilov, M. M [mitwirkender] Gaška, R [mitwirkender] Geiler, H. D [mitwirkender] Geisler, V. A [mitwirkender] Geßner, T [mitwirkender] Gilpérez, J. M [mitwirkender] Goltsev, V. P [mitwirkender] Gorbachenko, S. G [mitwirkender] Gorin, S. N [mitwirkender] Gotra, Z. Fu [mitwirkender] Gotra, Z. Yu [mitwirkender] Grande, I. Y [mitwirkender] Gribkovskii, R. V [mitwirkender] Grigorjev, L. S [mitwirkender] Groetzschel, R [mitwirkender] Grotzachel, F [mitwirkender] Grótzschel, R [mitwirkender] Grötzschel, R [mitwirkender] Grünewald, W [mitwirkender] Gunot, U [mitwirkender] Gupta, A [mitwirkender] Gusakov, G. M [mitwirkender] Gusinsky, G. M [mitwirkender] Guzman, L [mitwirkender] Gänsicke, F [mitwirkender] Gärtner, K [mitwirkender] Götz, G [mitwirkender] Hee, V [mitwirkender] Heera, V [mitwirkender] Helming, K [mitwirkender] Hemment, P. L. F [mitwirkender] Henke, D [mitwirkender] Hentschel, E [mitwirkender] Hentschel, R [mitwirkender] Hertens, A [mitwirkender] Hesse, K [mitwirkender] Hevesi, I [mitwirkender] Hevolin, T. H [mitwirkender] Heydenreich, J [mitwirkender] Hlávka, J [mitwirkender] Hoehl, D [mitwirkender] Hoeppner, K [mitwirkender] Hoffmann, W [mitwirkender] Hohauth, K [mitwirkender] Hohmuth, Karl [herausgeberIn] Horoderiski, A [mitwirkender] Höfner, P [mitwirkender] Hörig, W [mitwirkender] Hüller, J [mitwirkender] Itin, V. I [mitwirkender] Ivanov, O. M [mitwirkender] Ivlev, G. D [mitwirkender] Iwaki, Masaya [mitwirkender] Jiřfček, P [mitwirkender] Jiřífiček, P [mitwirkender] Johansen, H [mitwirkender] Kachurin, G. A [mitwirkender] Kaczanowski, J [mitwirkender] Kagadey, V. A [mitwirkender] Kalinushkin, V. P [mitwirkender] Kanter, B. Z [mitwirkender] Kasko, I. V [mitwirkender] Kazak, L. A [mitwirkender] Kazdaev, Kh. R [mitwirkender] Kejhar, Martin [mitwirkender] Kelly, Roger [mitwirkender] Keßler, G [mitwirkender] Khabelaehvili, I. D [mitwirkender] Khabelashvili, I. D [mitwirkender] Khaibullin, I. B [mitwirkender] Khodasevich, V. V [mitwirkender] Khodaseyich, V. V [mitwirkender] Khomsevich, V. V [mitwirkender] Khytko, V. I [mitwirkender] Knothe, P [mitwirkender] Koch, E [mitwirkender] Kogler, R [mitwirkender] Kolltsch, A [mitwirkender] Kolodii, V. N [mitwirkender] Kolshlbaeva, G. H [mitwirkender] Kolyadenko, S. H [mitwirkender] Kolyadenko, S. N [mitwirkender] Komar, V. P [mitwirkender] Komarov, F. F [mitwirkender] Komarov, P. P [mitwirkender] Komarovsky, I. A [mitwirkender] Konopljanik, G. G [mitwirkender] Konov, V. I [mitwirkender] Kopchenov, V. I [mitwirkender] Korenev, S. A [mitwirkender] Korobeinlkov, V. P [mitwirkender] Korotov, V. F [mitwirkender] Korshunov, F. P [mitwirkender] Kostjunin, A. A [mitwirkender] Kothari, D. C [mitwirkender] Kotljarevsky, M. B [mitwirkender] Kotte, R [mitwirkender] Kreißig, U [mitwirkender] Krjuchkov, Yu. Yu [mitwirkender] Krynicki, J [mitwirkender] Kubátová, J [mitwirkender] Kuclriavtsev, E. M [mitwirkender] Kukovitsky, E. F [mitwirkender] Kulikauskas, V. S [mitwirkender] Kulyasova, O. A [mitwirkender] Kuokštis, E [mitwirkender] Kuroohkina, T. V [mitwirkender] Kuzemchenko, T. A [mitwirkender] Kuzmichov, A. V [mitwirkender] Kuzmin, O. S [mitwirkender] Küchler, R [mitwirkender] Landi, E [mitwirkender] Langner, J [mitwirkender] Laschena, M [mitwirkender] Lebedeva, N. I [mitwirkender] Leggieri, G [mitwirkender] Lehmann, D [mitwirkender] Lemke, H [mitwirkender] Lenkeit, K [mitwirkender] Leshchenko, M. E [mitwirkender] Leshchenko, M.E [mitwirkender] Ligachev, A. E [mitwirkender] Limanov, A. B [mitwirkender] Linnros, Jan [mitwirkender] Liu, Bai-Xin [mitwirkender] Luches, A [mitwirkender] Lukeš, I [mitwirkender] Lutterotti, L [mitwirkender] Lyaenko, V. S [mitwirkender] Lychagin, D. V [mitwirkender] Lykov, S. V [mitwirkender] Lysenko, Eh. V [mitwirkender] Lysenko, V. S [mitwirkender] Lämmel, B [mitwirkender] Makarov, V. H [mitwirkender] Makarov, V. N [mitwirkender] Makhmudov, M. A [mitwirkender] Malinin, A. A [mitwirkender] Maller, H [mitwirkender] Manenkov, A. A [mitwirkender] Manzhosov, Yu. A [mitwirkender] Marest, G [mitwirkender] Martino, M [mitwirkender] Martínez-Duart, J. M [mitwirkender] Maslakov, A. I [mitwirkender] Matthai, J [mitwirkender] Mesyats, G. A [mitwirkender] Metzig, K [mitwirkender] Mihailescu, I. N [mitwirkender] Mikhailova, G. N [mitwirkender] Miller, B [mitwirkender] Milutin, V. M [mitwirkender] Minaev, S. A [mitwirkender] Miotello, A [mitwirkender] Mogilnik, I. F [mitwirkender] Moncoffre, N [mitwirkender] Mordkovich, V. N [mitwirkender] Muller, R [mitwirkender] Murzin, I. G [mitwirkender] Musatova, L. V [mitwirkender] Müller, A [mitwirkender] Müller, H [mitwirkender] Nachring, F. K [mitwirkender] Naehring, F. K [mitwirkender] Nanai, L [mitwirkender] Nazarov, A. N [mitwirkender] Neahov, F. G [mitwirkender] Neelmeijer, C [mitwirkender] Netikšis, V [mitwirkender] Neubert, F [mitwirkender] Neumann, H [mitwirkender] Nevolin, T. N [mitwirkender] Nikitenkov, N. N [mitwirkender] Niklforov, A. I [mitwirkender] Nikolov, Borlslav [mitwirkender] Nikonov, A. A [mitwirkender] Novikov, A. P [mitwirkender] Novikov, A [mitwirkender] Novikov, P. L [mitwirkender] Novikova, G. M [mitwirkender] Oang, Quoc Chung [mitwirkender] Orlenko, V. F [mitwirkender] Ortlepp, H. G [mitwirkender] Otto, G [mitwirkender] Otto, Th [mitwirkender] Ozhur, G. E [mitwirkender] Ozur, G. E [mitwirkender] Panknin, D [mitwirkender] Panzner, M [mitwirkender] Pattachov, Ta. V [mitwirkender] Pavienko, A. A [mitwirkender] Pavlovich, V. N [mitwirkender] Peksheva, T. E [mitwirkender] Perrière, J [mitwirkender] Petrauskas, M [mitwirkender] Petrov, S. A [mitwirkender] Petrov, V. A [mitwirkender] Petukhov, V. Yu [mitwirkender] Pham, M.T [mitwirkender] Pichugin, V. F [mitwirkender] Piekoszewski, J [mitwirkender] Pirrwitz, A [mitwirkender] Pivovar, V. S [mitwirkender] Plotnikov, A. E [mitwirkender] Plotnikov, S.V [mitwirkender] Poape, W [mitwirkender] Pochrybniak, C [mitwirkender] Pogrebnjak, A A. D [mitwirkender] Pogrebnjak, A. D [mitwirkender] Polman, A [mitwirkender] Pompe, A [mitwirkender] Pompe, V [mitwirkender] Pompe, W [mitwirkender] Pons, F [mitwirkender] Pop, S. S [mitwirkender] Popor, B. T [mitwirkender] Popov, P. B [mitwirkender] Popov, V. P [mitwirkender] Poshelt, M [mitwirkender] Posselt, M [mitwirkender] Potemkin, G. V [mitwirkender] Prager, L [mitwirkender] Pranevičius, L [mitwirkender] Preuß, E [mitwirkender] Principi, G [mitwirkender] Proakurovaky, D. I [mitwirkender] Proakurovskii, D. I [mitwirkender] Proekuroveky, O. I [mitwirkender] Prokofiev, D. D [mitwirkender] Prokopenko, V. B [mitwirkender] Proskuroveky, D. I [mitwirkender] Proskurovsky, D. I [mitwirkender] Psoskdhovsky, D. E [mitwirkender] Pushkareva, G. V [mitwirkender] Pyatkova, T. M [mitwirkender] Quaranta, F [mitwirkender] Quian, L. S [mitwirkender] Radjabov, O [mitwirkender] Rauschenbach, B [mitwirkender] Reeson, K. J [mitwirkender] Reiße, G [mitwirkender] Remnjev, G. E [mitwirkender] Reutberg, H [mitwirkender] Reuther, H [mitwirkender] Richter, E [mitwirkender] Richter, Edgar [herausgeberIn] Richter, F [mitwirkender] Richter, H. H [mitwirkender] Richter, K [mitwirkender] Ritscheli, C [mitwirkender] Romanov, I. G [mitwirkender] Romanov, S. I [mitwirkender] Romanuk, B. N [mitwirkender] Rossi, M [mitwirkender] Rotahtein, V. P [mitwirkender] Rother, B [mitwirkender] Rudko, G. Yu [mitwirkender] Ruzimov, Sh. M [mitwirkender] Ryzhnitsyn, A. B [mitwirkender] Rzewuski, H [mitwirkender] Röhrich, J [mitwirkender] Sadovskaya, O. L [mitwirkender] Savchenko, A. O [mitwirkender] Scardi, P [mitwirkender] Schade, K [mitwirkender] Schindler, A [mitwirkender] Scholz, U [mitwirkender] Schäfer, O [mitwirkender] Schöneich, B [mitwirkender] Schöneich, J [mitwirkender] Semerak, M. M [mitwirkender] Semyannikov, V. E [mitwirkender] Shalnov, A. V [mitwirkender] Sharkeevt, Yu. P [mitwirkender] Shlopak, N. V [mitwirkender] Shmyrin, A. J [mitwirkender] Shpilevsky, E. M [mitwirkender] Siairoth, P [mitwirkender] Sieber, N [mitwirkender] Siegel, J [mitwirkender] Sikolenko, V. V [mitwirkender] Sinke, W. C [mitwirkender] Sioshansi, Piran [mitwirkender] Skornyakov, I. V [mitwirkender] Skorupa, W [mitwirkender] Skorupa, Wolfgang [mitwirkender] Slobodich, S. V [mitwirkender] Sobeslavsky, E [mitwirkender] Sobolev, N. A [mitwirkender] Solmi, S [mitwirkender] Soroka, V. I [mitwirkender] Sotnikov, G. V [mitwirkender] Starikova, T. I [mitwirkender] Stary, F [mitwirkender] Stavrov, Vi [mitwirkender] Steiger, B [mitwirkender] Stekolnikov, A. F [mitwirkender] Stepina, N. P [mitwirkender] Stiller, W [mitwirkender] Stock, D [mitwirkender] Stolk, P. A [mitwirkender] Strümpfe, J [mitwirkender] Stuckerfc, I . A [mitwirkender] Subotowicz, M [mitwirkender] Suchaneck, G [mitwirkender] Suvorov, A. V [mitwirkender] Szüce, I. S [mitwirkender] Tamulevičius, S [mitwirkender] Tan, Fan [mitwirkender] Teselkin, A. V [mitwirkender] Thomé, L [mitwirkender] Tija, S. A [mitwirkender] Tillack, B [mitwirkender] Tkach, Yu. V [mitwirkender] Tkachenko, A. S [mitwirkender] Toaasz, Skrabka [mitwirkender] Tokarev, A. S [mitwirkender] Tokarevski, V. V [mitwirkender] Tolonics, J [mitwirkender] Tomasi, A [mitwirkender] Tousset, J [mitwirkender] Tretiakov, V. V [mitwirkender] Trifonov, I [mitwirkender] Troitsky, V. Yu [mitwirkender] Trushin, Yu. V [mitwirkender] Turkin, A. A [mitwirkender] Turos, A [mitwirkender] Tyschenko, I. E [mitwirkender] Uglot, V. V [mitwirkender] Uglov, V. V [mitwirkender] Ulyashin, A. B [mitwirkender] Ulyashin, A. G [mitwirkender] Urmanov, A. R [mitwirkender] Ursu, I [mitwirkender] Uvarov, V. T [mitwirkender] Vajtai, R [mitwirkender] Valakh, M. Ya [mitwirkender] Valentini, A [mitwirkender] Valyaev, A. N [mitwirkender] Vanhellemonta, Jan [mitwirkender] Varbanov, R [mitwirkender] Vasiliev, O [mitwirkender] Vasilyev, A. L [mitwirkender] Velikov, L. V [mitwirkender] Vellmar, S [mitwirkender] Vetter, E [mitwirkender] Vetter, J [mitwirkender] Vinzelberg, H [mitwirkender] Vjatkin, A. P [mitwirkender] Vobonkdv, V. P [mitwirkender] Voelskow, M [mitwirkender] Voevodova, A. V [mitwirkender] Wagner, S [mitwirkender] Weber, B [mitwirkender] Werner, Z [mitwirkender] Wesch, W [mitwirkender] Wieser, E [mitwirkender] Wohlfarth, D [mitwirkender] Wolf, F [mitwirkender] Wolf, R [mitwirkender] Wolff, D [mitwirkender] Wollschlager, K [mitwirkender] Wollschläger, K [mitwirkender] Yaaada, Isao [mitwirkender] Yakubovlch, N. I [mitwirkender] Yanovski, V. P [mitwirkender] Yanovskii, V. P [mitwirkender] Yurchenko, V. A [mitwirkender] Zaitsev, A. M [mitwirkender] Zaroslov, D. Yu [mitwirkender] Zarqba, J [mitwirkender] Zchukova, I. B [mitwirkender] Zemek, J [mitwirkender] Zenkevich, A. V [mitwirkender] Zenkevich, A.V [mitwirkender] Zhukova, S. I [mitwirkender] Zhvavyi, S. P [mitwirkender] Zimmer, K [mitwirkender] Zinovjev, V. A [mitwirkender] Zohukova, T. B [mitwirkender] Zotov, S. D [mitwirkender] |
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| Format: |
E-Book |
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| Sprache: |
Deutsch |
| Erschienen: |
Berlin Boston: De Gruyter ; 2022 |
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| Ausgabe: |
Reprint 2021 |
| Rechteinformationen: |
Restricted Access |
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| Schlagwörter: |
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| Umfang: |
1 Online-Ressource (594 p) |
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| Beschreibung: |
Mode of access: Internet via World Wide Web. |
| Reproduktion: |
[Online-Ausgabe] |
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| Reihe: |
Physical Research ; 13 |
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| Links: | |
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| ISBN: |
978-3-11-257566-6 |
| DOI / URN: |
10.1515/9783112575666 |
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| Katalog-ID: |
1795194413 |
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| 520 | |a Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. | ||
| 520 | |a SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research | ||
| 533 | |a [Online-Ausgabe] | ||
| 538 | |a Mode of access: Internet via World Wide Web. | ||
| 546 | |a In German | ||
| 650 | 4 | |a NON-CLASSIFIABLE | |
| 650 | 4 | |a SCIENCE / Physics / Condensed Matter | |
| 700 | 1 | |a Ageev, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Akchulakov, M. T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Albert, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Albrecht, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Aleksandrov, L. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Aleshin, A. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Aliev, V. Sh |e mitwirkender |4 ctb | |
| 700 | 1 | |a Antropov, A. lf |e mitwirkender |4 ctb | |
| 700 | 1 | |a Arbuzov, V. Y |e mitwirkender |4 ctb | |
| 700 | 1 | |a Artsimovich, M. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ascheron, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bachmann, T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baghaev, V. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baither, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bakaj, A. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Balandin, V. Iu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baljtjba, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baltramiejünas, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bandurin, Yu. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Banisch, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Barabanenkov, M. Y |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baranov, A. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bartl, Rolf-Reiner |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bartsch, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Baryakhtar, I.V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bayadilov, E. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Becker, S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Belousov, V. T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Benyagoub, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Berova, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bertolotti, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bialoskozewski, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bischoff, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Blochwitz, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bobeth, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bobitski, Ya. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bogdenovich, B.Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Brauns, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Budinavičius, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bugiel, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bumay, Yu. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Burenkov, A. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Busin, Y. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Byzhnitsyn, A. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Bärinann, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Cestari, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Checha, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Chelnokov, V. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Chernakova, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Chernenko, S. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Choi, G. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Choi, Kong Hyon |e mitwirkender |4 ctb | |
| 700 | 1 | |a Choupyatova, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Chudoba, T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Cháb, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Claverie, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Climent, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Craciun, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dancheva, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Danilin, A.B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Danilovich, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a De Veirman, Ann |e mitwirkender |4 ctb | |
| 700 | 1 | |a Deltschew, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dement'ev, B.P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Demkovich, I. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Deshkovskaya, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dietsch, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dietze, H. J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dilk, I. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Domanevskii, D. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Domanewskii, D. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Domorod, N. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Donnet, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Drako, V. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Drandarov, Novak |e mitwirkender |4 ctb | |
| 700 | 1 | |a Drechsler, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Driesel, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Drigo, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dudonis, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dvurechenskii, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dvurechenskii, A.V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Dvurechensky, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Emiraliev, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Eolikaaakas, V. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Erfurth, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Erikhodko, I. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Evseev, B. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Feodorov, A. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ferrari, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Feudel, T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Filimonov, Yu. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Fischer, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Furmonavičius, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gancharik, T. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Garapadskii, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gavrilov, M. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gaška, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Geiler, H. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Geisler, V. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Geßner, T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gilpérez, J. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Goltsev, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gorbachenko, S. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gorin, S. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gotra, Z. Fu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gotra, Z. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grande, I. Y |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gribkovskii, R. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grigorjev, L. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Groetzschel, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grotzachel, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grótzschel, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grötzschel, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Grünewald, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gunot, U |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gupta, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gusakov, G. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gusinsky, G. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Guzman, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gänsicke, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Gärtner, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Götz, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hee, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Heera, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Helming, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hemment, P. L. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Henke, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hentschel, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hentschel, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hertens, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hesse, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hevesi, I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hevolin, T. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Heydenreich, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hlávka, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hoehl, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hoeppner, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hoffmann, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hohauth, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hohmuth, Karl |e herausgeberin |4 edt | |
| 700 | 1 | |a Horoderiski, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Höfner, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hörig, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Hüller, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Itin, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ivanov, O. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ivlev, G. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Iwaki, Masaya |e mitwirkender |4 ctb | |
| 700 | 1 | |a Jiřfček, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Jiřífiček, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Johansen, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kachurin, G. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kaczanowski, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kagadey, V. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kalinushkin, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kanter, B. Z |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kasko, I. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kazak, L. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kazdaev, Kh. R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kejhar, Martin |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kelly, Roger |e mitwirkender |4 ctb | |
| 700 | 1 | |a Keßler, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khabelaehvili, I. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khabelashvili, I. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khaibullin, I. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khodasevich, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khodaseyich, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khomsevich, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Khytko, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Knothe, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Koch, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kogler, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kolltsch, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kolodii, V. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kolshlbaeva, G. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kolyadenko, S. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kolyadenko, S. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Komar, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Komarov, F. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Komarov, P. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Komarovsky, I. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Konopljanik, G. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Konov, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kopchenov, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Korenev, S. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Korobeinlkov, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Korotov, V. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Korshunov, F. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kostjunin, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kothari, D. C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kotljarevsky, M. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kotte, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kreißig, U |e mitwirkender |4 ctb | |
| 700 | 1 | |a Krjuchkov, Yu. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Krynicki, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kubátová, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuclriavtsev, E. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kukovitsky, E. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kulikauskas, V. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kulyasova, O. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuokštis, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuroohkina, T. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuzemchenko, T. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuzmichov, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Kuzmin, O. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Küchler, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Landi, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Langner, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Laschena, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lebedeva, N. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Leggieri, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lehmann, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lemke, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lenkeit, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Leshchenko, M. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Leshchenko, M.E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ligachev, A. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Limanov, A. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Linnros, Jan |e mitwirkender |4 ctb | |
| 700 | 1 | |a Liu, Bai-Xin |e mitwirkender |4 ctb | |
| 700 | 1 | |a Luches, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lukeš, I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lutterotti, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lyaenko, V. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lychagin, D. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lykov, S. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lysenko, Eh. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lysenko, V. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Lämmel, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Makarov, V. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Makarov, V. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Makhmudov, M. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Malinin, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Maller, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Manenkov, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Manzhosov, Yu. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Marest, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Martino, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Martínez-Duart, J. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Maslakov, A. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Matthai, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Mesyats, G. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Metzig, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Mihailescu, I. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Mikhailova, G. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Miller, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Milutin, V. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Minaev, S. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Miotello, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Mogilnik, I. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Moncoffre, N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Mordkovich, V. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Muller, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Murzin, I. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Musatova, L. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Müller, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Müller, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nachring, F. K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Naehring, F. K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nanai, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nazarov, A. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Neahov, F. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Neelmeijer, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Netikšis, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Neubert, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Neumann, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nevolin, T. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nikitenkov, N. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Niklforov, A. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nikolov, Borlslav |e mitwirkender |4 ctb | |
| 700 | 1 | |a Nikonov, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Novikov, A. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Novikov, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Novikov, P. L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Novikova, G. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Oang, Quoc Chung |e mitwirkender |4 ctb | |
| 700 | 1 | |a Orlenko, V. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ortlepp, H. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Otto, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Otto, Th |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ozhur, G. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ozur, G. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Panknin, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Panzner, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pattachov, Ta. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pavienko, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pavlovich, V. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Peksheva, T. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Perrière, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Petrauskas, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Petrov, S. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Petrov, V. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Petukhov, V. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pham, M.T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pichugin, V. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Piekoszewski, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pirrwitz, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pivovar, V. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Plotnikov, A. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Plotnikov, S.V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Poape, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pochrybniak, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pogrebnjak, A A. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pogrebnjak, A. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Polman, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pompe, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pompe, V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pompe, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pons, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pop, S. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Popor, B. T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Popov, P. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Popov, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Poshelt, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Posselt, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Potemkin, G. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Prager, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pranevičius, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Preuß, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Principi, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Proakurovaky, D. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Proakurovskii, D. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Proekuroveky, O. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Prokofiev, D. D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Prokopenko, V. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Proskuroveky, D. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Proskurovsky, D. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Psoskdhovsky, D. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pushkareva, G. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Pyatkova, T. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Quaranta, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Quian, L. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Radjabov, O |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rauschenbach, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Reeson, K. J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Reiße, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Remnjev, G. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Reutberg, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Reuther, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Richter, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Richter, Edgar |e herausgeberin |4 edt | |
| 700 | 1 | |a Richter, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Richter, H. H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Richter, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ritscheli, C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Romanov, I. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Romanov, S. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Romanuk, B. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rossi, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rotahtein, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rother, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rudko, G. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ruzimov, Sh. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ryzhnitsyn, A. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Rzewuski, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Röhrich, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sadovskaya, O. L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Savchenko, A. O |e mitwirkender |4 ctb | |
| 700 | 1 | |a Scardi, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Schade, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Schindler, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Scholz, U |e mitwirkender |4 ctb | |
| 700 | 1 | |a Schäfer, O |e mitwirkender |4 ctb | |
| 700 | 1 | |a Schöneich, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Schöneich, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Semerak, M. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Semyannikov, V. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Shalnov, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sharkeevt, Yu. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Shlopak, N. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Shmyrin, A. J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Shpilevsky, E. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Siairoth, P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sieber, N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Siegel, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sikolenko, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sinke, W. C |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sioshansi, Piran |e mitwirkender |4 ctb | |
| 700 | 1 | |a Skornyakov, I. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Skorupa, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Skorupa, Wolfgang |e mitwirkender |4 ctb | |
| 700 | 1 | |a Slobodich, S. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sobeslavsky, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sobolev, N. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Solmi, S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Soroka, V. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Sotnikov, G. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Starikova, T. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stary, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stavrov, Vi |e mitwirkender |4 ctb | |
| 700 | 1 | |a Steiger, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stekolnikov, A. F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stepina, N. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stiller, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stock, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stolk, P. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Strümpfe, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Stuckerfc, I . A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Subotowicz, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Suchaneck, G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Suvorov, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Szüce, I. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tamulevičius, S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tan, Fan |e mitwirkender |4 ctb | |
| 700 | 1 | |a Teselkin, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Thomé, L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tija, S. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tillack, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tkach, Yu. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tkachenko, A. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Toaasz, Skrabka |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tokarev, A. S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tokarevski, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tolonics, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tomasi, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tousset, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tretiakov, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Trifonov, I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Troitsky, V. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Trushin, Yu. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Turkin, A. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Turos, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Tyschenko, I. E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Uglot, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Uglov, V. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ulyashin, A. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ulyashin, A. G |e mitwirkender |4 ctb | |
| 700 | 1 | |a Urmanov, A. R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Ursu, I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Uvarov, V. T |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vajtai, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Valakh, M. Ya |e mitwirkender |4 ctb | |
| 700 | 1 | |a Valentini, A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Valyaev, A. N |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vanhellemonta, Jan |e mitwirkender |4 ctb | |
| 700 | 1 | |a Varbanov, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vasiliev, O |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vasilyev, A. L |e mitwirkender |4 ctb | |
| 700 | 1 | |a Velikov, L. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vellmar, S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vetter, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vetter, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vinzelberg, H |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vjatkin, A. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Vobonkdv, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Voelskow, M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Voevodova, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wagner, S |e mitwirkender |4 ctb | |
| 700 | 1 | |a Weber, B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Werner, Z |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wesch, W |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wieser, E |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wohlfarth, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wolf, F |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wolf, R |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wolff, D |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wollschlager, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Wollschläger, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Yaaada, Isao |e mitwirkender |4 ctb | |
| 700 | 1 | |a Yakubovlch, N. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Yanovski, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Yanovskii, V. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Yurchenko, V. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zaitsev, A. M |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zaroslov, D. Yu |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zarqba, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zchukova, I. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zemek, J |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zenkevich, A. V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zenkevich, A.V |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zhukova, S. I |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zhvavyi, S. P |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zimmer, K |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zinovjev, V. A |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zohukova, T. B |e mitwirkender |4 ctb | |
| 700 | 1 | |a Zotov, S. D |e mitwirkender |4 ctb | |
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9783112575666 978-3-11-257566-6 10.1515/9783112575666 doi (DE-627)1795194413 (DE-599)KEP076953386 (DE-B1597)608764 (EBP)076953386 DE-627 eng DE-627 rda ger XA-DE QC611.6.S9 NON000000 bisacsh SCI077000 bisacsh EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth Reprint 2021 Berlin Boston De Gruyter [2022] 1 Online-Ressource (594 p) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Physical Research 13 Restricted Access Controlled Vocabulary for Access Rights http://purl.org/coar/access_right/c_16ec online access with authorization star Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research [Online-Ausgabe] Mode of access: Internet via World Wide Web. In German NON-CLASSIFIABLE SCIENCE / Physics / Condensed Matter Ageev, V mitwirkender ctb Akchulakov, M. T mitwirkender ctb Albert, M mitwirkender ctb Albrecht, J mitwirkender ctb Aleksandrov, L. N mitwirkender ctb Aleshin, A. N mitwirkender ctb Aliev, V. Sh mitwirkender ctb Antropov, A. lf mitwirkender ctb Arbuzov, V. Y mitwirkender ctb Artsimovich, M. V mitwirkender ctb Ascheron, C mitwirkender ctb Bachmann, T mitwirkender ctb Baghaev, V. N mitwirkender ctb Baither, D mitwirkender ctb Bakaj, A. S mitwirkender ctb Balandin, V. Iu mitwirkender ctb Baljtjba, V. I mitwirkender ctb Baltramiejünas, R mitwirkender ctb Bandurin, Yu. A mitwirkender ctb Banisch, R mitwirkender ctb Barabanenkov, M. Y mitwirkender ctb Baranov, A. N mitwirkender ctb Bartl, Rolf-Reiner mitwirkender ctb Bartsch, H mitwirkender ctb Baryakhtar, I.V mitwirkender ctb Bayadilov, E. M mitwirkender ctb Becker, S mitwirkender ctb Belousov, V. T mitwirkender ctb Benyagoub, A mitwirkender ctb Berova, D mitwirkender ctb Bertolotti, M mitwirkender ctb Bialoskozewski, J mitwirkender ctb Bischoff, L mitwirkender ctb Blochwitz, C mitwirkender ctb Bobeth, M mitwirkender ctb Bobitski, Ya. V mitwirkender ctb Bogdenovich, B.Yu mitwirkender ctb Brauns, B mitwirkender ctb Budinavičius, J mitwirkender ctb Bugiel, E mitwirkender ctb Bumay, Yu. 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E mitwirkender ctb Donnet, C mitwirkender ctb Drako, V. M mitwirkender ctb Drandarov, Novak mitwirkender ctb Drechsler, L mitwirkender ctb Driesel, W mitwirkender ctb Drigo, A. V mitwirkender ctb Dudonis, J mitwirkender ctb Dvurechenskii, A. V mitwirkender ctb Dvurechenskii, A.V mitwirkender ctb Dvurechensky, A. V mitwirkender ctb Emiraliev, A mitwirkender ctb Eolikaaakas, V. S mitwirkender ctb Erfurth, M mitwirkender ctb Erikhodko, I. I mitwirkender ctb Evseev, B. S mitwirkender ctb Feodorov, A. N mitwirkender ctb Ferrari, A mitwirkender ctb Feudel, T mitwirkender ctb Filimonov, Yu. V mitwirkender ctb Fischer, K mitwirkender ctb Furmonavičius, D mitwirkender ctb Gancharik, T. S mitwirkender ctb Garapadskii, A. A mitwirkender ctb Gavrilov, M. M mitwirkender ctb Gaška, R mitwirkender ctb Geiler, H. D mitwirkender ctb Geisler, V. A mitwirkender ctb Geßner, T mitwirkender ctb Gilpérez, J. M mitwirkender ctb Goltsev, V. P mitwirkender ctb Gorbachenko, S. G mitwirkender ctb Gorin, S. N mitwirkender ctb Gotra, Z. Fu mitwirkender ctb Gotra, Z. Yu mitwirkender ctb Grande, I. Y mitwirkender ctb Gribkovskii, R. V mitwirkender ctb Grigorjev, L. S mitwirkender ctb Groetzschel, R mitwirkender ctb Grotzachel, F mitwirkender ctb Grótzschel, R mitwirkender ctb Grötzschel, R mitwirkender ctb Grünewald, W mitwirkender ctb Gunot, U mitwirkender ctb Gupta, A mitwirkender ctb Gusakov, G. M mitwirkender ctb Gusinsky, G. M mitwirkender ctb Guzman, L mitwirkender ctb Gänsicke, F mitwirkender ctb Gärtner, K mitwirkender ctb Götz, G mitwirkender ctb Hee, V mitwirkender ctb Heera, V mitwirkender ctb Helming, K mitwirkender ctb Hemment, P. L. F mitwirkender ctb Henke, D mitwirkender ctb Hentschel, E mitwirkender ctb Hentschel, R mitwirkender ctb Hertens, A mitwirkender ctb Hesse, K mitwirkender ctb Hevesi, I mitwirkender ctb Hevolin, T. H mitwirkender ctb Heydenreich, J mitwirkender ctb Hlávka, J mitwirkender ctb Hoehl, D mitwirkender ctb Hoeppner, K mitwirkender ctb Hoffmann, W mitwirkender ctb Hohauth, K mitwirkender ctb Hohmuth, Karl herausgeberin edt Horoderiski, A mitwirkender ctb Höfner, P mitwirkender ctb Hörig, W mitwirkender ctb Hüller, J mitwirkender ctb Itin, V. I mitwirkender ctb Ivanov, O. M mitwirkender ctb Ivlev, G. D mitwirkender ctb Iwaki, Masaya mitwirkender ctb Jiřfček, P mitwirkender ctb Jiřífiček, P mitwirkender ctb Johansen, H mitwirkender ctb Kachurin, G. A mitwirkender ctb Kaczanowski, J mitwirkender ctb Kagadey, V. A mitwirkender ctb Kalinushkin, V. P mitwirkender ctb Kanter, B. Z mitwirkender ctb Kasko, I. V mitwirkender ctb Kazak, L. A mitwirkender ctb Kazdaev, Kh. R mitwirkender ctb Kejhar, Martin mitwirkender ctb Kelly, Roger mitwirkender ctb Keßler, G mitwirkender ctb Khabelaehvili, I. D mitwirkender ctb Khabelashvili, I. D mitwirkender ctb Khaibullin, I. B mitwirkender ctb Khodasevich, V. V mitwirkender ctb Khodaseyich, V. V mitwirkender ctb Khomsevich, V. V mitwirkender ctb Khytko, V. I mitwirkender ctb Knothe, P mitwirkender ctb Koch, E mitwirkender ctb Kogler, R mitwirkender ctb Kolltsch, A mitwirkender ctb Kolodii, V. N mitwirkender ctb Kolshlbaeva, G. H mitwirkender ctb Kolyadenko, S. H mitwirkender ctb Kolyadenko, S. N mitwirkender ctb Komar, V. P mitwirkender ctb Komarov, F. F mitwirkender ctb Komarov, P. P mitwirkender ctb Komarovsky, I. A mitwirkender ctb Konopljanik, G. G mitwirkender ctb Konov, V. I mitwirkender ctb Kopchenov, V. I mitwirkender ctb Korenev, S. A mitwirkender ctb Korobeinlkov, V. P mitwirkender ctb Korotov, V. F mitwirkender ctb Korshunov, F. P mitwirkender ctb Kostjunin, A. A mitwirkender ctb Kothari, D. C mitwirkender ctb Kotljarevsky, M. B mitwirkender ctb Kotte, R mitwirkender ctb Kreißig, U mitwirkender ctb Krjuchkov, Yu. Yu mitwirkender ctb Krynicki, J mitwirkender ctb Kubátová, J mitwirkender ctb Kuclriavtsev, E. M mitwirkender ctb Kukovitsky, E. F mitwirkender ctb Kulikauskas, V. S mitwirkender ctb Kulyasova, O. A mitwirkender ctb Kuokštis, E mitwirkender ctb Kuroohkina, T. V mitwirkender ctb Kuzemchenko, T. A mitwirkender ctb Kuzmichov, A. V mitwirkender ctb Kuzmin, O. S mitwirkender ctb Küchler, R mitwirkender ctb Landi, E mitwirkender ctb Langner, J mitwirkender ctb Laschena, M mitwirkender ctb Lebedeva, N. I mitwirkender ctb Leggieri, G mitwirkender ctb Lehmann, D mitwirkender ctb Lemke, H mitwirkender ctb Lenkeit, K mitwirkender ctb Leshchenko, M. E mitwirkender ctb Leshchenko, M.E mitwirkender ctb Ligachev, A. E mitwirkender ctb Limanov, A. B mitwirkender ctb Linnros, Jan mitwirkender ctb Liu, Bai-Xin mitwirkender ctb Luches, A mitwirkender ctb Lukeš, I mitwirkender ctb Lutterotti, L mitwirkender ctb Lyaenko, V. S mitwirkender ctb Lychagin, D. V mitwirkender ctb Lykov, S. V mitwirkender ctb Lysenko, Eh. V mitwirkender ctb Lysenko, V. S mitwirkender ctb Lämmel, B mitwirkender ctb Makarov, V. H mitwirkender ctb Makarov, V. N mitwirkender ctb Makhmudov, M. A mitwirkender ctb Malinin, A. A mitwirkender ctb Maller, H mitwirkender ctb Manenkov, A. A mitwirkender ctb Manzhosov, Yu. A mitwirkender ctb Marest, G mitwirkender ctb Martino, M mitwirkender ctb Martínez-Duart, J. M mitwirkender ctb Maslakov, A. I mitwirkender ctb Matthai, J mitwirkender ctb Mesyats, G. A mitwirkender ctb Metzig, K mitwirkender ctb Mihailescu, I. N mitwirkender ctb Mikhailova, G. N mitwirkender ctb Miller, B mitwirkender ctb Milutin, V. M mitwirkender ctb Minaev, S. A mitwirkender ctb Miotello, A mitwirkender ctb Mogilnik, I. F mitwirkender ctb Moncoffre, N mitwirkender ctb Mordkovich, V. N mitwirkender ctb Muller, R mitwirkender ctb Murzin, I. G mitwirkender ctb Musatova, L. V mitwirkender ctb Müller, A mitwirkender ctb Müller, H mitwirkender ctb Nachring, F. K mitwirkender ctb Naehring, F. K mitwirkender ctb Nanai, L mitwirkender ctb Nazarov, A. N mitwirkender ctb Neahov, F. G mitwirkender ctb Neelmeijer, C mitwirkender ctb Netikšis, V mitwirkender ctb Neubert, F mitwirkender ctb Neumann, H mitwirkender ctb Nevolin, T. N mitwirkender ctb Nikitenkov, N. N mitwirkender ctb Niklforov, A. I mitwirkender ctb Nikolov, Borlslav mitwirkender ctb Nikonov, A. A mitwirkender ctb Novikov, A. P mitwirkender ctb Novikov, A mitwirkender ctb Novikov, P. L mitwirkender ctb Novikova, G. M mitwirkender ctb Oang, Quoc Chung mitwirkender ctb Orlenko, V. F mitwirkender ctb Ortlepp, H. G mitwirkender ctb Otto, G mitwirkender ctb Otto, Th mitwirkender ctb Ozhur, G. E mitwirkender ctb Ozur, G. E mitwirkender ctb Panknin, D mitwirkender ctb Panzner, M mitwirkender ctb Pattachov, Ta. V mitwirkender ctb Pavienko, A. A mitwirkender ctb Pavlovich, V. N mitwirkender ctb Peksheva, T. E mitwirkender ctb Perrière, J mitwirkender ctb Petrauskas, M mitwirkender ctb Petrov, S. A mitwirkender ctb Petrov, V. A mitwirkender ctb Petukhov, V. Yu mitwirkender ctb Pham, M.T mitwirkender ctb Pichugin, V. F mitwirkender ctb Piekoszewski, J mitwirkender ctb Pirrwitz, A mitwirkender ctb Pivovar, V. S mitwirkender ctb Plotnikov, A. E mitwirkender ctb Plotnikov, S.V mitwirkender ctb Poape, W mitwirkender ctb Pochrybniak, C mitwirkender ctb Pogrebnjak, A A. D mitwirkender ctb Pogrebnjak, A. D mitwirkender ctb Polman, A mitwirkender ctb Pompe, A mitwirkender ctb Pompe, V mitwirkender ctb Pompe, W mitwirkender ctb Pons, F mitwirkender ctb Pop, S. S mitwirkender ctb Popor, B. T mitwirkender ctb Popov, P. B mitwirkender ctb Popov, V. P mitwirkender ctb Poshelt, M mitwirkender ctb Posselt, M mitwirkender ctb Potemkin, G. V mitwirkender ctb Prager, L mitwirkender ctb Pranevičius, L mitwirkender ctb Preuß, E mitwirkender ctb Principi, G mitwirkender ctb Proakurovaky, D. 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A mitwirkender ctb Solmi, S mitwirkender ctb Soroka, V. I mitwirkender ctb Sotnikov, G. V mitwirkender ctb Starikova, T. I mitwirkender ctb Stary, F mitwirkender ctb Stavrov, Vi mitwirkender ctb Steiger, B mitwirkender ctb Stekolnikov, A. F mitwirkender ctb Stepina, N. P mitwirkender ctb Stiller, W mitwirkender ctb Stock, D mitwirkender ctb Stolk, P. A mitwirkender ctb Strümpfe, J mitwirkender ctb Stuckerfc, I . A mitwirkender ctb Subotowicz, M mitwirkender ctb Suchaneck, G mitwirkender ctb Suvorov, A. V mitwirkender ctb Szüce, I. S mitwirkender ctb Tamulevičius, S mitwirkender ctb Tan, Fan mitwirkender ctb Teselkin, A. V mitwirkender ctb Thomé, L mitwirkender ctb Tija, S. A mitwirkender ctb Tillack, B mitwirkender ctb Tkach, Yu. V mitwirkender ctb Tkachenko, A. S mitwirkender ctb Toaasz, Skrabka mitwirkender ctb Tokarev, A. S mitwirkender ctb Tokarevski, V. V mitwirkender ctb Tolonics, J mitwirkender ctb Tomasi, A mitwirkender ctb Tousset, J mitwirkender ctb Tretiakov, V. 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V mitwirkender ctb Wagner, S mitwirkender ctb Weber, B mitwirkender ctb Werner, Z mitwirkender ctb Wesch, W mitwirkender ctb Wieser, E mitwirkender ctb Wohlfarth, D mitwirkender ctb Wolf, F mitwirkender ctb Wolf, R mitwirkender ctb Wolff, D mitwirkender ctb Wollschlager, K mitwirkender ctb Wollschläger, K mitwirkender ctb Yaaada, Isao mitwirkender ctb Yakubovlch, N. I mitwirkender ctb Yanovski, V. P mitwirkender ctb Yanovskii, V. P mitwirkender ctb Yurchenko, V. A mitwirkender ctb Zaitsev, A. M mitwirkender ctb Zaroslov, D. Yu mitwirkender ctb Zarqba, J mitwirkender ctb Zchukova, I. B mitwirkender ctb Zemek, J mitwirkender ctb Zenkevich, A. V mitwirkender ctb Zenkevich, A.V mitwirkender ctb Zhukova, S. I mitwirkender ctb Zhvavyi, S. P mitwirkender ctb Zimmer, K mitwirkender ctb Zinovjev, V. A mitwirkender ctb Zohukova, T. B mitwirkender ctb Zotov, S. D mitwirkender ctb 9783112575659 Erscheint auch als print 9783112575659 https://doi.org/10.1515/9783112575666 X:GRUY Resolving-System lizenzpflichtig https://www.degruyter.com/isbn/9783112575666 X:GRUY Verlag lizenzpflichtig https://www.degruyter.com/document/cover/isbn/9783112575666/original X:GRUY Verlag Cover EBA-BACKALL EBA-DGALL EBA-EBKALL EBA-SSHALL EBA-STMALL GBV-deGruyter-alles ZDB-23-GPS 1990 ZDB-23-GBA 1990 GBV_ILN_20 ISIL_DE-84 SYSFLAG_1 GBV_KXP GBV_ILN_21 ISIL_DE-46 GBV_ILN_22 ISIL_DE-18 GBV_ILN_23 ISIL_DE-830 GBV_ILN_24 ISIL_DE-8 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_60 ISIL_DE-705 GBV_ILN_65 ISIL_DE-3 GBV_ILN_69 ISIL_DE-9 GBV_ILN_72 ISIL_DE-35 GBV_ILN_90 ISIL_DE-Hil2 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_120 ISIL_DE-715 GBV_ILN_122 ISIL_DE-897 GBV_ILN_130 ISIL_DE-700 GBV_ILN_140 ISIL_DE-839 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_264 ISIL_DE-897-1 GBV_ILN_285 ISIL_DE-517 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_736 GBV_ILN_2001 ISIL_DE-21 GBV_ILN_2006 ISIL_DE-14 GBV_ILN_2010 ISIL_DE-15 GBV_ILN_2020 ISIL_DE-Ch1 GBV_ILN_2027 ISIL_DE-105 GBV_ILN_2044 ISIL_DE-751 GBV_ILN_2045 ISIL_DE-Mit1 GBV_ILN_2050 ISIL_DE-Zi4 GBV_ILN_2063 ISIL_DE-951 GBV_ILN_2118 ISIL_DE-Mh35 BO 045F 537.622 20 01 0084 4111602932 CATDESC_DGR-EB CATDESC_DGR-EB z 02-04-22 21 01 0046 4101028265 ebook_2023_degruyter_ebs Freie Nutzung im <a href="http://nbn-resolving.de/urn:nbn:de:gbv:46-campusnetz9" Target="_blank">Campusnetz</a> der Universitaet und der Hochschulen im Lande Bremen zza 25-03-22 22 01 0018 4109757215 00 --%%-- --%%-- s --%%-- SUBedegebs zu 01-04-22 23 01 0830 4091698158 olr-degruyter3 i z 16-03-22 24 01 0008 4094854460 00 --%%-- --%%-- s --%%-- olr-dgebs Vervielfältigungen (z.B. 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9783112575666 978-3-11-257566-6 10.1515/9783112575666 doi (DE-627)1795194413 (DE-599)KEP076953386 (DE-B1597)608764 (EBP)076953386 DE-627 eng DE-627 rda ger XA-DE QC611.6.S9 NON000000 bisacsh SCI077000 bisacsh EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth Reprint 2021 Berlin Boston De Gruyter [2022] 1 Online-Ressource (594 p) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Physical Research 13 Restricted Access Controlled Vocabulary for Access Rights http://purl.org/coar/access_right/c_16ec online access with authorization star Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research [Online-Ausgabe] Mode of access: Internet via World Wide Web. In German NON-CLASSIFIABLE SCIENCE / Physics / Condensed Matter Ageev, V mitwirkender ctb Akchulakov, M. T mitwirkender ctb Albert, M mitwirkender ctb Albrecht, J mitwirkender ctb Aleksandrov, L. N mitwirkender ctb Aleshin, A. N mitwirkender ctb Aliev, V. Sh mitwirkender ctb Antropov, A. lf mitwirkender ctb Arbuzov, V. Y mitwirkender ctb Artsimovich, M. V mitwirkender ctb Ascheron, C mitwirkender ctb Bachmann, T mitwirkender ctb Baghaev, V. N mitwirkender ctb Baither, D mitwirkender ctb Bakaj, A. S mitwirkender ctb Balandin, V. Iu mitwirkender ctb Baljtjba, V. I mitwirkender ctb Baltramiejünas, R mitwirkender ctb Bandurin, Yu. A mitwirkender ctb Banisch, R mitwirkender ctb Barabanenkov, M. Y mitwirkender ctb Baranov, A. N mitwirkender ctb Bartl, Rolf-Reiner mitwirkender ctb Bartsch, H mitwirkender ctb Baryakhtar, I.V mitwirkender ctb Bayadilov, E. M mitwirkender ctb Becker, S mitwirkender ctb Belousov, V. T mitwirkender ctb Benyagoub, A mitwirkender ctb Berova, D mitwirkender ctb Bertolotti, M mitwirkender ctb Bialoskozewski, J mitwirkender ctb Bischoff, L mitwirkender ctb Blochwitz, C mitwirkender ctb Bobeth, M mitwirkender ctb Bobitski, Ya. V mitwirkender ctb Bogdenovich, B.Yu mitwirkender ctb Brauns, B mitwirkender ctb Budinavičius, J mitwirkender ctb Bugiel, E mitwirkender ctb Bumay, Yu. 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D mitwirkender ctb 9783112575659 Erscheint auch als print 9783112575659 https://doi.org/10.1515/9783112575666 X:GRUY Resolving-System lizenzpflichtig https://www.degruyter.com/isbn/9783112575666 X:GRUY Verlag lizenzpflichtig https://www.degruyter.com/document/cover/isbn/9783112575666/original X:GRUY Verlag Cover EBA-BACKALL EBA-DGALL EBA-EBKALL EBA-SSHALL EBA-STMALL GBV-deGruyter-alles ZDB-23-GPS 1990 ZDB-23-GBA 1990 GBV_ILN_20 ISIL_DE-84 SYSFLAG_1 GBV_KXP GBV_ILN_21 ISIL_DE-46 GBV_ILN_22 ISIL_DE-18 GBV_ILN_23 ISIL_DE-830 GBV_ILN_24 ISIL_DE-8 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_60 ISIL_DE-705 GBV_ILN_65 ISIL_DE-3 GBV_ILN_69 ISIL_DE-9 GBV_ILN_72 ISIL_DE-35 GBV_ILN_90 ISIL_DE-Hil2 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_120 ISIL_DE-715 GBV_ILN_122 ISIL_DE-897 GBV_ILN_130 ISIL_DE-700 GBV_ILN_140 ISIL_DE-839 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_264 ISIL_DE-897-1 GBV_ILN_285 ISIL_DE-517 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_736 GBV_ILN_2001 ISIL_DE-21 GBV_ILN_2006 ISIL_DE-14 GBV_ILN_2010 ISIL_DE-15 GBV_ILN_2020 ISIL_DE-Ch1 GBV_ILN_2027 ISIL_DE-105 GBV_ILN_2044 ISIL_DE-751 GBV_ILN_2045 ISIL_DE-Mit1 GBV_ILN_2050 ISIL_DE-Zi4 GBV_ILN_2063 ISIL_DE-951 GBV_ILN_2118 ISIL_DE-Mh35 BO 045F 537.622 20 01 0084 4111602932 CATDESC_DGR-EB CATDESC_DGR-EB z 02-04-22 21 01 0046 4101028265 ebook_2023_degruyter_ebs Freie Nutzung im <a href="http://nbn-resolving.de/urn:nbn:de:gbv:46-campusnetz9" Target="_blank">Campusnetz</a> der Universitaet und der Hochschulen im Lande Bremen zza 25-03-22 22 01 0018 4109757215 00 --%%-- --%%-- s --%%-- SUBedegebs zu 01-04-22 23 01 0830 4091698158 olr-degruyter3 i z 16-03-22 24 01 0008 4094854460 00 --%%-- --%%-- s --%%-- olr-dgebs Vervielfältigungen (z.B. 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9783112575666 978-3-11-257566-6 10.1515/9783112575666 doi (DE-627)1795194413 (DE-599)KEP076953386 (DE-B1597)608764 (EBP)076953386 DE-627 eng DE-627 rda ger XA-DE QC611.6.S9 NON000000 bisacsh SCI077000 bisacsh EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth Reprint 2021 Berlin Boston De Gruyter [2022] 1 Online-Ressource (594 p) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Physical Research 13 Restricted Access Controlled Vocabulary for Access Rights http://purl.org/coar/access_right/c_16ec online access with authorization star Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research [Online-Ausgabe] Mode of access: Internet via World Wide Web. In German NON-CLASSIFIABLE SCIENCE / Physics / Condensed Matter Ageev, V mitwirkender ctb Akchulakov, M. T mitwirkender ctb Albert, M mitwirkender ctb Albrecht, J mitwirkender ctb Aleksandrov, L. N mitwirkender ctb Aleshin, A. N mitwirkender ctb Aliev, V. Sh mitwirkender ctb Antropov, A. lf mitwirkender ctb Arbuzov, V. 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V mitwirkender ctb Trifonov, I mitwirkender ctb Troitsky, V. Yu mitwirkender ctb Trushin, Yu. V mitwirkender ctb Turkin, A. A mitwirkender ctb Turos, A mitwirkender ctb Tyschenko, I. E mitwirkender ctb Uglot, V. V mitwirkender ctb Uglov, V. V mitwirkender ctb Ulyashin, A. B mitwirkender ctb Ulyashin, A. G mitwirkender ctb Urmanov, A. R mitwirkender ctb Ursu, I mitwirkender ctb Uvarov, V. T mitwirkender ctb Vajtai, R mitwirkender ctb Valakh, M. Ya mitwirkender ctb Valentini, A mitwirkender ctb Valyaev, A. N mitwirkender ctb Vanhellemonta, Jan mitwirkender ctb Varbanov, R mitwirkender ctb Vasiliev, O mitwirkender ctb Vasilyev, A. L mitwirkender ctb Velikov, L. V mitwirkender ctb Vellmar, S mitwirkender ctb Vetter, E mitwirkender ctb Vetter, J mitwirkender ctb Vinzelberg, H mitwirkender ctb Vjatkin, A. P mitwirkender ctb Vobonkdv, V. P mitwirkender ctb Voelskow, M mitwirkender ctb Voevodova, A. V mitwirkender ctb Wagner, S mitwirkender ctb Weber, B mitwirkender ctb Werner, Z mitwirkender ctb Wesch, W mitwirkender ctb Wieser, E mitwirkender ctb Wohlfarth, D mitwirkender ctb Wolf, F mitwirkender ctb Wolf, R mitwirkender ctb Wolff, D mitwirkender ctb Wollschlager, K mitwirkender ctb Wollschläger, K mitwirkender ctb Yaaada, Isao mitwirkender ctb Yakubovlch, N. I mitwirkender ctb Yanovski, V. P mitwirkender ctb Yanovskii, V. P mitwirkender ctb Yurchenko, V. A mitwirkender ctb Zaitsev, A. M mitwirkender ctb Zaroslov, D. Yu mitwirkender ctb Zarqba, J mitwirkender ctb Zchukova, I. B mitwirkender ctb Zemek, J mitwirkender ctb Zenkevich, A. V mitwirkender ctb Zenkevich, A.V mitwirkender ctb Zhukova, S. I mitwirkender ctb Zhvavyi, S. P mitwirkender ctb Zimmer, K mitwirkender ctb Zinovjev, V. A mitwirkender ctb Zohukova, T. B mitwirkender ctb Zotov, S. 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9783112575666 978-3-11-257566-6 10.1515/9783112575666 doi (DE-627)1795194413 (DE-599)KEP076953386 (DE-B1597)608764 (EBP)076953386 DE-627 eng DE-627 rda ger XA-DE QC611.6.S9 NON000000 bisacsh SCI077000 bisacsh EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth Reprint 2021 Berlin Boston De Gruyter [2022] 1 Online-Ressource (594 p) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Physical Research 13 Restricted Access Controlled Vocabulary for Access Rights http://purl.org/coar/access_right/c_16ec online access with authorization star Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research [Online-Ausgabe] Mode of access: Internet via World Wide Web. In German NON-CLASSIFIABLE SCIENCE / Physics / Condensed Matter Ageev, V mitwirkender ctb Akchulakov, M. T mitwirkender ctb Albert, M mitwirkender ctb Albrecht, J mitwirkender ctb Aleksandrov, L. N mitwirkender ctb Aleshin, A. N mitwirkender ctb Aliev, V. Sh mitwirkender ctb Antropov, A. lf mitwirkender ctb Arbuzov, V. 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I mitwirkender ctb Proakurovskii, D. I mitwirkender ctb Proekuroveky, O. I mitwirkender ctb Prokofiev, D. D mitwirkender ctb Prokopenko, V. B mitwirkender ctb Proskuroveky, D. I mitwirkender ctb Proskurovsky, D. I mitwirkender ctb Psoskdhovsky, D. E mitwirkender ctb Pushkareva, G. V mitwirkender ctb Pyatkova, T. M mitwirkender ctb Quaranta, F mitwirkender ctb Quian, L. S mitwirkender ctb Radjabov, O mitwirkender ctb Rauschenbach, B mitwirkender ctb Reeson, K. J mitwirkender ctb Reiße, G mitwirkender ctb Remnjev, G. E mitwirkender ctb Reutberg, H mitwirkender ctb Reuther, H mitwirkender ctb Richter, E mitwirkender ctb Richter, Edgar herausgeberin edt Richter, F mitwirkender ctb Richter, H. H mitwirkender ctb Richter, K mitwirkender ctb Ritscheli, C mitwirkender ctb Romanov, I. G mitwirkender ctb Romanov, S. I mitwirkender ctb Romanuk, B. N mitwirkender ctb Rossi, M mitwirkender ctb Rotahtein, V. P mitwirkender ctb Rother, B mitwirkender ctb Rudko, G. Yu mitwirkender ctb Ruzimov, Sh. M mitwirkender ctb Ryzhnitsyn, A. B mitwirkender ctb Rzewuski, H mitwirkender ctb Röhrich, J mitwirkender ctb Sadovskaya, O. L mitwirkender ctb Savchenko, A. O mitwirkender ctb Scardi, P mitwirkender ctb Schade, K mitwirkender ctb Schindler, A mitwirkender ctb Scholz, U mitwirkender ctb Schäfer, O mitwirkender ctb Schöneich, B mitwirkender ctb Schöneich, J mitwirkender ctb Semerak, M. M mitwirkender ctb Semyannikov, V. E mitwirkender ctb Shalnov, A. V mitwirkender ctb Sharkeevt, Yu. P mitwirkender ctb Shlopak, N. V mitwirkender ctb Shmyrin, A. J mitwirkender ctb Shpilevsky, E. M mitwirkender ctb Siairoth, P mitwirkender ctb Sieber, N mitwirkender ctb Siegel, J mitwirkender ctb Sikolenko, V. V mitwirkender ctb Sinke, W. C mitwirkender ctb Sioshansi, Piran mitwirkender ctb Skornyakov, I. V mitwirkender ctb Skorupa, W mitwirkender ctb Skorupa, Wolfgang mitwirkender ctb Slobodich, S. V mitwirkender ctb Sobeslavsky, E mitwirkender ctb Sobolev, N. 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9783112575666 978-3-11-257566-6 10.1515/9783112575666 doi (DE-627)1795194413 (DE-599)KEP076953386 (DE-B1597)608764 (EBP)076953386 DE-627 eng DE-627 rda ger XA-DE QC611.6.S9 NON000000 bisacsh SCI077000 bisacsh EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth Reprint 2021 Berlin Boston De Gruyter [2022] 1 Online-Ressource (594 p) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Physical Research 13 Restricted Access Controlled Vocabulary for Access Rights http://purl.org/coar/access_right/c_16ec online access with authorization star Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research [Online-Ausgabe] Mode of access: Internet via World Wide Web. In German NON-CLASSIFIABLE SCIENCE / Physics / Condensed Matter Ageev, V mitwirkender ctb Akchulakov, M. T mitwirkender ctb Albert, M mitwirkender ctb Albrecht, J mitwirkender ctb Aleksandrov, L. N mitwirkender ctb Aleshin, A. N mitwirkender ctb Aliev, V. Sh mitwirkender ctb Antropov, A. lf mitwirkender ctb Arbuzov, V. 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K mitwirkender ctb Naehring, F. K mitwirkender ctb Nanai, L mitwirkender ctb Nazarov, A. N mitwirkender ctb Neahov, F. G mitwirkender ctb Neelmeijer, C mitwirkender ctb Netikšis, V mitwirkender ctb Neubert, F mitwirkender ctb Neumann, H mitwirkender ctb Nevolin, T. N mitwirkender ctb Nikitenkov, N. N mitwirkender ctb Niklforov, A. I mitwirkender ctb Nikolov, Borlslav mitwirkender ctb Nikonov, A. A mitwirkender ctb Novikov, A. P mitwirkender ctb Novikov, A mitwirkender ctb Novikov, P. L mitwirkender ctb Novikova, G. M mitwirkender ctb Oang, Quoc Chung mitwirkender ctb Orlenko, V. F mitwirkender ctb Ortlepp, H. G mitwirkender ctb Otto, G mitwirkender ctb Otto, Th mitwirkender ctb Ozhur, G. E mitwirkender ctb Ozur, G. E mitwirkender ctb Panknin, D mitwirkender ctb Panzner, M mitwirkender ctb Pattachov, Ta. V mitwirkender ctb Pavienko, A. A mitwirkender ctb Pavlovich, V. N mitwirkender ctb Peksheva, T. E mitwirkender ctb Perrière, J mitwirkender ctb Petrauskas, M mitwirkender ctb Petrov, S. A mitwirkender ctb Petrov, V. A mitwirkender ctb Petukhov, V. Yu mitwirkender ctb Pham, M.T mitwirkender ctb Pichugin, V. F mitwirkender ctb Piekoszewski, J mitwirkender ctb Pirrwitz, A mitwirkender ctb Pivovar, V. S mitwirkender ctb Plotnikov, A. E mitwirkender ctb Plotnikov, S.V mitwirkender ctb Poape, W mitwirkender ctb Pochrybniak, C mitwirkender ctb Pogrebnjak, A A. D mitwirkender ctb Pogrebnjak, A. D mitwirkender ctb Polman, A mitwirkender ctb Pompe, A mitwirkender ctb Pompe, V mitwirkender ctb Pompe, W mitwirkender ctb Pons, F mitwirkender ctb Pop, S. S mitwirkender ctb Popor, B. T mitwirkender ctb Popov, P. B mitwirkender ctb Popov, V. P mitwirkender ctb Poshelt, M mitwirkender ctb Posselt, M mitwirkender ctb Potemkin, G. V mitwirkender ctb Prager, L mitwirkender ctb Pranevičius, L mitwirkender ctb Preuß, E mitwirkender ctb Principi, G mitwirkender ctb Proakurovaky, D. 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V mitwirkender ctb Trifonov, I mitwirkender ctb Troitsky, V. Yu mitwirkender ctb Trushin, Yu. V mitwirkender ctb Turkin, A. A mitwirkender ctb Turos, A mitwirkender ctb Tyschenko, I. E mitwirkender ctb Uglot, V. V mitwirkender ctb Uglov, V. V mitwirkender ctb Ulyashin, A. B mitwirkender ctb Ulyashin, A. G mitwirkender ctb Urmanov, A. R mitwirkender ctb Ursu, I mitwirkender ctb Uvarov, V. T mitwirkender ctb Vajtai, R mitwirkender ctb Valakh, M. Ya mitwirkender ctb Valentini, A mitwirkender ctb Valyaev, A. N mitwirkender ctb Vanhellemonta, Jan mitwirkender ctb Varbanov, R mitwirkender ctb Vasiliev, O mitwirkender ctb Vasilyev, A. L mitwirkender ctb Velikov, L. V mitwirkender ctb Vellmar, S mitwirkender ctb Vetter, E mitwirkender ctb Vetter, J mitwirkender ctb Vinzelberg, H mitwirkender ctb Vjatkin, A. P mitwirkender ctb Vobonkdv, V. P mitwirkender ctb Voelskow, M mitwirkender ctb Voevodova, A. V mitwirkender ctb Wagner, S mitwirkender ctb Weber, B mitwirkender ctb Werner, Z mitwirkender ctb Wesch, W mitwirkender ctb Wieser, E mitwirkender ctb Wohlfarth, D mitwirkender ctb Wolf, F mitwirkender ctb Wolf, R mitwirkender ctb Wolff, D mitwirkender ctb Wollschlager, K mitwirkender ctb Wollschläger, K mitwirkender ctb Yaaada, Isao mitwirkender ctb Yakubovlch, N. I mitwirkender ctb Yanovski, V. P mitwirkender ctb Yanovskii, V. P mitwirkender ctb Yurchenko, V. A mitwirkender ctb Zaitsev, A. M mitwirkender ctb Zaroslov, D. Yu mitwirkender ctb Zarqba, J mitwirkender ctb Zchukova, I. B mitwirkender ctb Zemek, J mitwirkender ctb Zenkevich, A. V mitwirkender ctb Zenkevich, A.V mitwirkender ctb Zhukova, S. I mitwirkender ctb Zhvavyi, S. P mitwirkender ctb Zimmer, K mitwirkender ctb Zinovjev, V. A mitwirkender ctb Zohukova, T. B mitwirkender ctb Zotov, S. 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Ageev, V @@ctb@@ Akchulakov, M. T @@ctb@@ Albert, M @@ctb@@ Albrecht, J @@ctb@@ Aleksandrov, L. N @@ctb@@ Aleshin, A. N @@ctb@@ Aliev, V. Sh @@ctb@@ Antropov, A. lf @@ctb@@ Arbuzov, V. Y @@ctb@@ Artsimovich, M. V @@ctb@@ Ascheron, C @@ctb@@ Bachmann, T @@ctb@@ Baghaev, V. N @@ctb@@ Baither, D @@ctb@@ Bakaj, A. S @@ctb@@ Balandin, V. Iu @@ctb@@ Baljtjba, V. I @@ctb@@ Baltramiejünas, R @@ctb@@ Bandurin, Yu. A @@ctb@@ Banisch, R @@ctb@@ Barabanenkov, M. Y @@ctb@@ Baranov, A. N @@ctb@@ Bartl, Rolf-Reiner @@ctb@@ Bartsch, H @@ctb@@ Baryakhtar, I.V @@ctb@@ Bayadilov, E. M @@ctb@@ Becker, S @@ctb@@ Belousov, V. T @@ctb@@ Benyagoub, A @@ctb@@ Berova, D @@ctb@@ Bertolotti, M @@ctb@@ Bialoskozewski, J @@ctb@@ Bischoff, L @@ctb@@ Blochwitz, C @@ctb@@ Bobeth, M @@ctb@@ Bobitski, Ya. V @@ctb@@ Bogdenovich, B.Yu @@ctb@@ Brauns, B @@ctb@@ Budinavičius, J @@ctb@@ Bugiel, E @@ctb@@ Bumay, Yu. A @@ctb@@ Burenkov, A. F @@ctb@@ Busin, Y. G @@ctb@@ Byzhnitsyn, A. B @@ctb@@ Bärinann, J @@ctb@@ Cestari, C @@ctb@@ Checha, V. P @@ctb@@ Chelnokov, V. E @@ctb@@ Chernakova, A @@ctb@@ Chernenko, S. V @@ctb@@ Choi, G. H @@ctb@@ Choi, Kong Hyon @@ctb@@ Choupyatova, L @@ctb@@ Chudoba, T @@ctb@@ Cháb, V @@ctb@@ Claverie, A @@ctb@@ Climent, A @@ctb@@ Craciun, V @@ctb@@ Dancheva, E @@ctb@@ Danilin, A.B @@ctb@@ Danilovich, J @@ctb@@ De Veirman, Ann @@ctb@@ Deltschew, R @@ctb@@ Dement'ev, B.P @@ctb@@ Demkovich, I. V @@ctb@@ Deshkovskaya, A. A @@ctb@@ Dietsch, R @@ctb@@ Dietze, H. J @@ctb@@ Dilk, I. A @@ctb@@ Domanevskii, D. S @@ctb@@ Domanewskii, D. S @@ctb@@ Domorod, N. E @@ctb@@ Donnet, C @@ctb@@ Drako, V. M @@ctb@@ Drandarov, Novak @@ctb@@ Drechsler, L @@ctb@@ Driesel, W @@ctb@@ Drigo, A. V @@ctb@@ Dudonis, J @@ctb@@ Dvurechenskii, A. V @@ctb@@ Dvurechenskii, A.V @@ctb@@ Dvurechensky, A. V @@ctb@@ Emiraliev, A @@ctb@@ Eolikaaakas, V. S @@ctb@@ Erfurth, M @@ctb@@ Erikhodko, I. I @@ctb@@ Evseev, B. S @@ctb@@ Feodorov, A. N @@ctb@@ Ferrari, A @@ctb@@ Feudel, T @@ctb@@ Filimonov, Yu. V @@ctb@@ Fischer, K @@ctb@@ Furmonavičius, D @@ctb@@ Gancharik, T. S @@ctb@@ Garapadskii, A. A @@ctb@@ Gavrilov, M. M @@ctb@@ Gaška, R @@ctb@@ Geiler, H. D @@ctb@@ Geisler, V. A @@ctb@@ Geßner, T @@ctb@@ Gilpérez, J. M @@ctb@@ Goltsev, V. P @@ctb@@ Gorbachenko, S. G @@ctb@@ Gorin, S. N @@ctb@@ Gotra, Z. Fu @@ctb@@ Gotra, Z. Yu @@ctb@@ Grande, I. Y @@ctb@@ Gribkovskii, R. V @@ctb@@ Grigorjev, L. S @@ctb@@ Groetzschel, R @@ctb@@ Grotzachel, F @@ctb@@ Grótzschel, R @@ctb@@ Grötzschel, R @@ctb@@ Grünewald, W @@ctb@@ Gunot, U @@ctb@@ Gupta, A @@ctb@@ Gusakov, G. M @@ctb@@ Gusinsky, G. M @@ctb@@ Guzman, L @@ctb@@ Gänsicke, F @@ctb@@ Gärtner, K @@ctb@@ Götz, G @@ctb@@ Hee, V @@ctb@@ Heera, V @@ctb@@ Helming, K @@ctb@@ Hemment, P. L. F @@ctb@@ Henke, D @@ctb@@ Hentschel, E @@ctb@@ Hentschel, R @@ctb@@ Hertens, A @@ctb@@ Hesse, K @@ctb@@ Hevesi, I @@ctb@@ Hevolin, T. H @@ctb@@ Heydenreich, J @@ctb@@ Hlávka, J @@ctb@@ Hoehl, D @@ctb@@ Hoeppner, K @@ctb@@ Hoffmann, W @@ctb@@ Hohauth, K @@ctb@@ Hohmuth, Karl @@edt@@ Horoderiski, A @@ctb@@ Höfner, P @@ctb@@ Hörig, W @@ctb@@ Hüller, J @@ctb@@ Itin, V. I @@ctb@@ Ivanov, O. M @@ctb@@ Ivlev, G. D @@ctb@@ Iwaki, Masaya @@ctb@@ Jiřfček, P @@ctb@@ Jiřífiček, P @@ctb@@ Johansen, H @@ctb@@ Kachurin, G. A @@ctb@@ Kaczanowski, J @@ctb@@ Kagadey, V. A @@ctb@@ Kalinushkin, V. P @@ctb@@ Kanter, B. Z @@ctb@@ Kasko, I. V @@ctb@@ Kazak, L. A @@ctb@@ Kazdaev, Kh. R @@ctb@@ Kejhar, Martin @@ctb@@ Kelly, Roger @@ctb@@ Keßler, G @@ctb@@ Khabelaehvili, I. D @@ctb@@ Khabelashvili, I. D @@ctb@@ Khaibullin, I. B @@ctb@@ Khodasevich, V. V @@ctb@@ Khodaseyich, V. V @@ctb@@ Khomsevich, V. V @@ctb@@ Khytko, V. I @@ctb@@ Knothe, P @@ctb@@ Koch, E @@ctb@@ Kogler, R @@ctb@@ Kolltsch, A @@ctb@@ Kolodii, V. N @@ctb@@ Kolshlbaeva, G. H @@ctb@@ Kolyadenko, S. H @@ctb@@ Kolyadenko, S. N @@ctb@@ Komar, V. P @@ctb@@ Komarov, F. F @@ctb@@ Komarov, P. P @@ctb@@ Komarovsky, I. A @@ctb@@ Konopljanik, G. G @@ctb@@ Konov, V. I @@ctb@@ Kopchenov, V. I @@ctb@@ Korenev, S. A @@ctb@@ Korobeinlkov, V. P @@ctb@@ Korotov, V. F @@ctb@@ Korshunov, F. P @@ctb@@ Kostjunin, A. A @@ctb@@ Kothari, D. C @@ctb@@ Kotljarevsky, M. B @@ctb@@ Kotte, R @@ctb@@ Kreißig, U @@ctb@@ Krjuchkov, Yu. Yu @@ctb@@ Krynicki, J @@ctb@@ Kubátová, J @@ctb@@ Kuclriavtsev, E. M @@ctb@@ Kukovitsky, E. F @@ctb@@ Kulikauskas, V. S @@ctb@@ Kulyasova, O. A @@ctb@@ Kuokštis, E @@ctb@@ Kuroohkina, T. V @@ctb@@ Kuzemchenko, T. A @@ctb@@ Kuzmichov, A. V @@ctb@@ Kuzmin, O. S @@ctb@@ Küchler, R @@ctb@@ Landi, E @@ctb@@ Langner, J @@ctb@@ Laschena, M @@ctb@@ Lebedeva, N. I @@ctb@@ Leggieri, G @@ctb@@ Lehmann, D @@ctb@@ Lemke, H @@ctb@@ Lenkeit, K @@ctb@@ Leshchenko, M. E @@ctb@@ Leshchenko, M.E @@ctb@@ Ligachev, A. E @@ctb@@ Limanov, A. B @@ctb@@ Linnros, Jan @@ctb@@ Liu, Bai-Xin @@ctb@@ Luches, A @@ctb@@ Lukeš, I @@ctb@@ Lutterotti, L @@ctb@@ Lyaenko, V. S @@ctb@@ Lychagin, D. V @@ctb@@ Lykov, S. V @@ctb@@ Lysenko, Eh. V @@ctb@@ Lysenko, V. S @@ctb@@ Lämmel, B @@ctb@@ Makarov, V. H @@ctb@@ Makarov, V. N @@ctb@@ Makhmudov, M. A @@ctb@@ Malinin, A. A @@ctb@@ Maller, H @@ctb@@ Manenkov, A. A @@ctb@@ Manzhosov, Yu. A @@ctb@@ Marest, G @@ctb@@ Martino, M @@ctb@@ Martínez-Duart, J. M @@ctb@@ Maslakov, A. I @@ctb@@ Matthai, J @@ctb@@ Mesyats, G. A @@ctb@@ Metzig, K @@ctb@@ Mihailescu, I. N @@ctb@@ Mikhailova, G. N @@ctb@@ Miller, B @@ctb@@ Milutin, V. M @@ctb@@ Minaev, S. A @@ctb@@ Miotello, A @@ctb@@ Mogilnik, I. F @@ctb@@ Moncoffre, N @@ctb@@ Mordkovich, V. N @@ctb@@ Muller, R @@ctb@@ Murzin, I. G @@ctb@@ Musatova, L. V @@ctb@@ Müller, A @@ctb@@ Müller, H @@ctb@@ Nachring, F. K @@ctb@@ Naehring, F. K @@ctb@@ Nanai, L @@ctb@@ Nazarov, A. N @@ctb@@ Neahov, F. G @@ctb@@ Neelmeijer, C @@ctb@@ Netikšis, V @@ctb@@ Neubert, F @@ctb@@ Neumann, H @@ctb@@ Nevolin, T. N @@ctb@@ Nikitenkov, N. N @@ctb@@ Niklforov, A. I @@ctb@@ Nikolov, Borlslav @@ctb@@ Nikonov, A. A @@ctb@@ Novikov, A. P @@ctb@@ Novikov, A @@ctb@@ Novikov, P. L @@ctb@@ Novikova, G. M @@ctb@@ Oang, Quoc Chung @@ctb@@ Orlenko, V. F @@ctb@@ Ortlepp, H. G @@ctb@@ Otto, G @@ctb@@ Otto, Th @@ctb@@ Ozhur, G. E @@ctb@@ Ozur, G. E @@ctb@@ Panknin, D @@ctb@@ Panzner, M @@ctb@@ Pattachov, Ta. V @@ctb@@ Pavienko, A. A @@ctb@@ Pavlovich, V. N @@ctb@@ Peksheva, T. E @@ctb@@ Perrière, J @@ctb@@ Petrauskas, M @@ctb@@ Petrov, S. A @@ctb@@ Petrov, V. A @@ctb@@ Petukhov, V. Yu @@ctb@@ Pham, M.T @@ctb@@ Pichugin, V. F @@ctb@@ Piekoszewski, J @@ctb@@ Pirrwitz, A @@ctb@@ Pivovar, V. S @@ctb@@ Plotnikov, A. E @@ctb@@ Plotnikov, S.V @@ctb@@ Poape, W @@ctb@@ Pochrybniak, C @@ctb@@ Pogrebnjak, A A. D @@ctb@@ Pogrebnjak, A. D @@ctb@@ Polman, A @@ctb@@ Pompe, A @@ctb@@ Pompe, V @@ctb@@ Pompe, W @@ctb@@ Pons, F @@ctb@@ Pop, S. S @@ctb@@ Popor, B. T @@ctb@@ Popov, P. B @@ctb@@ Popov, V. P @@ctb@@ Poshelt, M @@ctb@@ Posselt, M @@ctb@@ Potemkin, G. V @@ctb@@ Prager, L @@ctb@@ Pranevičius, L @@ctb@@ Preuß, E @@ctb@@ Principi, G @@ctb@@ Proakurovaky, D. I @@ctb@@ Proakurovskii, D. I @@ctb@@ Proekuroveky, O. I @@ctb@@ Prokofiev, D. D @@ctb@@ Prokopenko, V. B @@ctb@@ Proskuroveky, D. I @@ctb@@ Proskurovsky, D. I @@ctb@@ Psoskdhovsky, D. E @@ctb@@ Pushkareva, G. V @@ctb@@ Pyatkova, T. M @@ctb@@ Quaranta, F @@ctb@@ Quian, L. S @@ctb@@ Radjabov, O @@ctb@@ Rauschenbach, B @@ctb@@ Reeson, K. J @@ctb@@ Reiße, G @@ctb@@ Remnjev, G. E @@ctb@@ Reutberg, H @@ctb@@ Reuther, H @@ctb@@ Richter, E @@ctb@@ Richter, Edgar @@edt@@ Richter, F @@ctb@@ Richter, H. H @@ctb@@ Richter, K @@ctb@@ Ritscheli, C @@ctb@@ Romanov, I. G @@ctb@@ Romanov, S. I @@ctb@@ Romanuk, B. N @@ctb@@ Rossi, M @@ctb@@ Rotahtein, V. P @@ctb@@ Rother, B @@ctb@@ Rudko, G. Yu @@ctb@@ Ruzimov, Sh. M @@ctb@@ Ryzhnitsyn, A. B @@ctb@@ Rzewuski, H @@ctb@@ Röhrich, J @@ctb@@ Sadovskaya, O. L @@ctb@@ Savchenko, A. O @@ctb@@ Scardi, P @@ctb@@ Schade, K @@ctb@@ Schindler, A @@ctb@@ Scholz, U @@ctb@@ Schäfer, O @@ctb@@ Schöneich, B @@ctb@@ Schöneich, J @@ctb@@ Semerak, M. M @@ctb@@ Semyannikov, V. E @@ctb@@ Shalnov, A. V @@ctb@@ Sharkeevt, Yu. P @@ctb@@ Shlopak, N. V @@ctb@@ Shmyrin, A. J @@ctb@@ Shpilevsky, E. M @@ctb@@ Siairoth, P @@ctb@@ Sieber, N @@ctb@@ Siegel, J @@ctb@@ Sikolenko, V. V @@ctb@@ Sinke, W. C @@ctb@@ Sioshansi, Piran @@ctb@@ Skornyakov, I. V @@ctb@@ Skorupa, W @@ctb@@ Skorupa, Wolfgang @@ctb@@ Slobodich, S. V @@ctb@@ Sobeslavsky, E @@ctb@@ Sobolev, N. A @@ctb@@ Solmi, S @@ctb@@ Soroka, V. I @@ctb@@ Sotnikov, G. V @@ctb@@ Starikova, T. I @@ctb@@ Stary, F @@ctb@@ Stavrov, Vi @@ctb@@ Steiger, B @@ctb@@ Stekolnikov, A. F @@ctb@@ Stepina, N. P @@ctb@@ Stiller, W @@ctb@@ Stock, D @@ctb@@ Stolk, P. A @@ctb@@ Strümpfe, J @@ctb@@ Stuckerfc, I . A @@ctb@@ Subotowicz, M @@ctb@@ Suchaneck, G @@ctb@@ Suvorov, A. V @@ctb@@ Szüce, I. S @@ctb@@ Tamulevičius, S @@ctb@@ Tan, Fan @@ctb@@ Teselkin, A. V @@ctb@@ Thomé, L @@ctb@@ Tija, S. A @@ctb@@ Tillack, B @@ctb@@ Tkach, Yu. V @@ctb@@ Tkachenko, A. S @@ctb@@ Toaasz, Skrabka @@ctb@@ Tokarev, A. S @@ctb@@ Tokarevski, V. V @@ctb@@ Tolonics, J @@ctb@@ Tomasi, A @@ctb@@ Tousset, J @@ctb@@ Tretiakov, V. V @@ctb@@ Trifonov, I @@ctb@@ Troitsky, V. Yu @@ctb@@ Trushin, Yu. V @@ctb@@ Turkin, A. A @@ctb@@ Turos, A @@ctb@@ Tyschenko, I. E @@ctb@@ Uglot, V. V @@ctb@@ Uglov, V. V @@ctb@@ Ulyashin, A. B @@ctb@@ Ulyashin, A. G @@ctb@@ Urmanov, A. R @@ctb@@ Ursu, I @@ctb@@ Uvarov, V. T @@ctb@@ Vajtai, R @@ctb@@ Valakh, M. Ya @@ctb@@ Valentini, A @@ctb@@ Valyaev, A. N @@ctb@@ Vanhellemonta, Jan @@ctb@@ Varbanov, R @@ctb@@ Vasiliev, O @@ctb@@ Vasilyev, A. L @@ctb@@ Velikov, L. V @@ctb@@ Vellmar, S @@ctb@@ Vetter, E @@ctb@@ Vetter, J @@ctb@@ Vinzelberg, H @@ctb@@ Vjatkin, A. P @@ctb@@ Vobonkdv, V. P @@ctb@@ Voelskow, M @@ctb@@ Voevodova, A. V @@ctb@@ Wagner, S @@ctb@@ Weber, B @@ctb@@ Werner, Z @@ctb@@ Wesch, W @@ctb@@ Wieser, E @@ctb@@ Wohlfarth, D @@ctb@@ Wolf, F @@ctb@@ Wolf, R @@ctb@@ Wolff, D @@ctb@@ Wollschlager, K @@ctb@@ Wollschläger, K @@ctb@@ Yaaada, Isao @@ctb@@ Yakubovlch, N. I @@ctb@@ Yanovski, V. P @@ctb@@ Yanovskii, V. P @@ctb@@ Yurchenko, V. A @@ctb@@ Zaitsev, A. M @@ctb@@ Zaroslov, D. Yu @@ctb@@ Zarqba, J @@ctb@@ Zchukova, I. B @@ctb@@ Zemek, J @@ctb@@ Zenkevich, A. V @@ctb@@ Zenkevich, A.V @@ctb@@ Zhukova, S. I @@ctb@@ Zhvavyi, S. P @@ctb@@ Zimmer, K @@ctb@@ Zinovjev, V. A @@ctb@@ Zohukova, T. B @@ctb@@ Zotov, S. D @@ctb@@ |
| publishDateDaySort_date |
2022-01-01T00:00:00Z |
| id |
1795194413 |
| signature_iln |
65:ebook 0003:ebook 2044:eBook de Gruyter DE-751:eBook de Gruyter 2063:eBook de Gruyter DE-951:eBook de Gruyter 2118:eBook de Gruyter DE-Mh35:eBook de Gruyter |
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65:ebook 0003:ebook 2044:eBook de Gruyter DE-751:eBook de Gruyter 2063:eBook de Gruyter DE-951:eBook de Gruyter 2118:eBook de Gruyter DE-Mh35:eBook de Gruyter |
| signature_iln_scis_mv |
65:ebook 0003:ebook 2044:eBook de Gruyter DE-751:eBook de Gruyter 2063:eBook de Gruyter DE-951:eBook de Gruyter 2118:eBook de Gruyter DE-Mh35:eBook de Gruyter |
| language_de |
deutsch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000cam a22002652 4500</leader><controlfield tag="001">1795194413</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20241002171610.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220310s2022 gw |||||o 00| ||ger c</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783112575666</subfield><subfield code="9">978-3-11-257566-6</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/9783112575666</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)1795194413</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)KEP076953386</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-B1597)608764</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EBP)076953386</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">eng</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="c">XA-DE</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC611.6.S9</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">NON000000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">SCI077000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR</subfield><subfield code="c">hrsg. von Edgar Richter, Karl Hohmuth</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Reprint 2021</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="a">Boston</subfield><subfield code="b">De Gruyter</subfield><subfield code="c">[2022]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (594 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Physical Research</subfield><subfield code="v">13</subfield></datafield><datafield tag="506" ind1="1" ind2=" "><subfield code="a">Restricted Access</subfield><subfield code="e">Controlled Vocabulary for Access Rights</subfield><subfield code="u">http://purl.org/coar/access_right/c_16ec</subfield><subfield code="f">online access with authorization</subfield><subfield code="2">star</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="a">[Online-Ausgabe]</subfield></datafield><datafield tag="538" ind1=" " ind2=" "><subfield code="a">Mode of access: Internet via World Wide Web.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In German</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">NON-CLASSIFIABLE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SCIENCE / Physics / Condensed Matter</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ageev, V</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Akchulakov, M. T</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Albert, M</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Albrecht, J</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aleksandrov, L. N</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aleshin, A. N</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliev, V. 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Hochschulen im Lande Bremen</subfield><subfield code="y">zza</subfield><subfield code="z">25-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">22</subfield><subfield code="1">01</subfield><subfield code="x">0018</subfield><subfield code="b">4109757215</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">s</subfield><subfield code="j">--%%--</subfield><subfield code="h">SUBedegebs</subfield><subfield code="y">zu</subfield><subfield code="z">01-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">23</subfield><subfield code="1">01</subfield><subfield code="x">0830</subfield><subfield code="b">4091698158</subfield><subfield code="h">olr-degruyter3</subfield><subfield code="u">i</subfield><subfield code="y">z</subfield><subfield code="z">16-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield 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Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="k">Zugriff auf den Volltext nur für Universitätsangehörige innerhalb des Netzes der Universität Kiel (Campuslizenz).</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">31</subfield><subfield code="1">01</subfield><subfield code="x">0027</subfield><subfield code="b">4094723129</subfield><subfield code="h">OLR-DeGruyterEBS</subfield><subfield code="k">Zugang zeitlich begrenzt. Dauerhaften Zugang über Formular für Anschaffungsvorschläge anfragen.</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">34</subfield><subfield code="1">01</subfield><subfield code="x">3551</subfield><subfield code="b">4094056602</subfield><subfield code="h">OLR-EBAKALL-EBS</subfield><subfield code="k">Zugriff nur im Netz der HAW Hamburg</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">60</subfield><subfield code="1">01</subfield><subfield code="x">0705</subfield><subfield code="b">4094610081</subfield><subfield code="h">DeGruyterArchiv</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="k">Nur für Angehörige der HSU: Volltextzugang von außerhalb des Campus mit Anmeldung über Shibboleth mit Ihrer Bibliothekskennung</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">65</subfield><subfield code="1">01</subfield><subfield code="x">0003</subfield><subfield code="b">4094713085</subfield><subfield code="c">03</subfield><subfield code="f">--%%--</subfield><subfield code="d">ebook</subfield><subfield code="e">--%%--</subfield><subfield code="j">--%%--</subfield><subfield code="h">OLR-ZDB-23-GPS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">k3o</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">69</subfield><subfield code="1">01</subfield><subfield code="x">0009</subfield><subfield code="b">4094766340</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="u">BF_dG</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">72</subfield><subfield code="1">01</subfield><subfield code="x">0035</subfield><subfield code="b">4117564382</subfield><subfield code="h">OLR-DG-PDA11SSHE</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="y">z</subfield><subfield code="z">13-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">90</subfield><subfield code="1">01</subfield><subfield code="x">3090</subfield><subfield code="b">4094810390</subfield><subfield code="h">OLR-HILdegruyter</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">110</subfield><subfield code="1">01</subfield><subfield code="x">3110</subfield><subfield code="b">4097722824</subfield><subfield code="h">OLR-DEGRUYTER-EBS-2018</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="k">Volltextzugriff nur für berechtigte Personen über das Campusnetz</subfield><subfield code="y">z</subfield><subfield code="z">22-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">120</subfield><subfield code="1">01</subfield><subfield code="x">0715</subfield><subfield code="b">4112991312</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">g</subfield><subfield code="j">--%%--</subfield><subfield code="h">alma</subfield><subfield code="y">z</subfield><subfield code="z">07-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">122</subfield><subfield code="1">01</subfield><subfield code="x">0897</subfield><subfield code="b">4094546103</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">130</subfield><subfield code="1">01</subfield><subfield code="x">0700</subfield><subfield code="b">4094898867</subfield><subfield code="h">OLR-deGruyter-EBA-EBKALL</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">140</subfield><subfield code="1">01</subfield><subfield code="x">0839</subfield><subfield code="b">409460748X</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">147</subfield><subfield code="1">01</subfield><subfield code="x">3528</subfield><subfield code="b">4094971483</subfield><subfield code="h">OLR-EBS-DG</subfield><subfield code="k">Multiuser | freigeschaltet für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">264</subfield><subfield code="1">01</subfield><subfield code="x">3264</subfield><subfield code="b">4094661980</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">285</subfield><subfield code="1">01</subfield><subfield code="x">0517</subfield><subfield code="b">4590344173</subfield><subfield code="h">OLR-GRUY-TEST</subfield><subfield code="k">Zugriff zeitlich begrenzt (EBS)</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">10-10-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">370</subfield><subfield code="1">01</subfield><subfield code="x">4370</subfield><subfield code="b">4094261249</subfield><subfield code="h">EBS deGruyter</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="u">i</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">736</subfield><subfield code="1">01</subfield><subfield code="x">4736</subfield><subfield code="b">4494000973</subfield><subfield code="h">DeGryuterEBS2024</subfield><subfield code="u">verv</subfield><subfield code="y">zeg</subfield><subfield code="z">29-02-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2001</subfield><subfield code="1">01</subfield><subfield code="x">DE-21</subfield><subfield code="b">4086425076</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">kp</subfield><subfield code="y">l01</subfield><subfield code="z">10-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2006</subfield><subfield code="1">01</subfield><subfield code="x">DE-14</subfield><subfield code="b">4426270537</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">--%%--</subfield><subfield code="y">l01</subfield><subfield code="z">05-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2010</subfield><subfield code="1">01</subfield><subfield code="x">DE-15</subfield><subfield code="b">4426060532</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Elektronischer Volltext - Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">05-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2020</subfield><subfield code="1">01</subfield><subfield code="x">DE-Ch1</subfield><subfield code="b">4438651824</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">15-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2027</subfield><subfield code="1">01</subfield><subfield code="x">DE-105</subfield><subfield code="b">4460329433</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">17-01-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2044</subfield><subfield code="1">01</subfield><subfield code="x">DE-751</subfield><subfield code="b">4586337389</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">eBook de Gruyter</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz bis 30.09.2025. Bitte beachten Sie die Nutzungshinweise auf unserer Homepage (de Gruyter)</subfield><subfield code="y">l01</subfield><subfield code="z">02-10-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2045</subfield><subfield code="1">01</subfield><subfield code="x">DE-Mit1</subfield><subfield code="b">4489565895</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Volltext - Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">21-02-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2050</subfield><subfield code="1">01</subfield><subfield code="x">DE-Zi4</subfield><subfield code="b">4438651832</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Zugriff im HSZG-Campusnetz. Zugriff von auβerhalb nur für HSZG-Angehörige.</subfield><subfield code="y">l01</subfield><subfield code="z">15-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2063</subfield><subfield code="1">01</subfield><subfield code="x">DE-951</subfield><subfield code="b">4086425106</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">eBook de Gruyter</subfield><subfield code="e">n</subfield><subfield code="j">n</subfield><subfield code="k">Elektronischer Volltext - Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">10-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2118</subfield><subfield code="1">01</subfield><subfield code="x">DE-Mh35</subfield><subfield code="b">4442451788</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">eBook de Gruyter</subfield><subfield code="e">--%%--</subfield><subfield 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EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR hrsg. von Edgar Richter, Karl Hohmuth |
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epm '89: 3rd international conference on energy pulse and particle beam modification of materials, september 4.-8. 1989, dresden, gdr |
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QC611.6.S9 |
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EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR |
| abstract |
Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research |
| abstractGer |
Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research |
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Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8. SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research |
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| title_short |
EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR |
| url |
https://doi.org/10.1515/9783112575666 https://www.degruyter.com/isbn/9783112575666 https://www.degruyter.com/document/cover/isbn/9783112575666/original |
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| author2 |
Ageev, V Akchulakov, M. T Albert, M Albrecht, J Aleksandrov, L. N Aleshin, A. N Aliev, V. Sh Antropov, A. lf Arbuzov, V. Y Artsimovich, M. V Ascheron, C Bachmann, T Baghaev, V. N Baither, D Bakaj, A. S Balandin, V. Iu Baljtjba, V. I Baltramiejünas, R Bandurin, Yu. A Banisch, R Barabanenkov, M. Y Baranov, A. N Bartl, Rolf-Reiner Bartsch, H Baryakhtar, I.V Bayadilov, E. M Becker, S Belousov, V. T Benyagoub, A Berova, D Bertolotti, M Bialoskozewski, J Bischoff, L Blochwitz, C Bobeth, M Bobitski, Ya. V Bogdenovich, B.Yu Brauns, B Budinavičius, J Bugiel, E Bumay, Yu. A Burenkov, A. F Busin, Y. G Byzhnitsyn, A. B Bärinann, J Cestari, C Checha, V. P Chelnokov, V. E Chernakova, A Chernenko, S. V Choi, G. H Choi, Kong Hyon Choupyatova, L Chudoba, T Cháb, V Claverie, A Climent, A Craciun, V Dancheva, E Danilin, A.B Danilovich, J De Veirman, Ann Deltschew, R Dement'ev, B.P Demkovich, I. V Deshkovskaya, A. A Dietsch, R Dietze, H. J Dilk, I. A Domanevskii, D. S Domanewskii, D. S Domorod, N. E Donnet, C Drako, V. M Drandarov, Novak Drechsler, L Driesel, W Drigo, A. V Dudonis, J Dvurechenskii, A. V Dvurechenskii, A.V Dvurechensky, A. V Emiraliev, A Eolikaaakas, V. S Erfurth, M Erikhodko, I. I Evseev, B. S Feodorov, A. N Ferrari, A Feudel, T Filimonov, Yu. V Fischer, K Furmonavičius, D Gancharik, T. S Garapadskii, A. A Gavrilov, M. M Gaška, R Geiler, H. D Geisler, V. A Geßner, T Gilpérez, J. M Goltsev, V. P Gorbachenko, S. G Gorin, S. N Gotra, Z. Fu Gotra, Z. Yu Grande, I. Y Gribkovskii, R. V Grigorjev, L. S Groetzschel, R Grotzachel, F Grótzschel, R Grötzschel, R Grünewald, W Gunot, U Gupta, A Gusakov, G. M Gusinsky, G. M Guzman, L Gänsicke, F Gärtner, K Götz, G Hee, V Heera, V Helming, K Hemment, P. L. F Henke, D Hentschel, E Hentschel, R Hertens, A Hesse, K Hevesi, I Hevolin, T. H Heydenreich, J Hlávka, J Hoehl, D Hoeppner, K Hoffmann, W Hohauth, K Hohmuth, Karl Horoderiski, A Höfner, P Hörig, W Hüller, J Itin, V. I Ivanov, O. M Ivlev, G. D Iwaki, Masaya Jiřfček, P Jiřífiček, P Johansen, H Kachurin, G. A Kaczanowski, J Kagadey, V. A Kalinushkin, V. P Kanter, B. Z Kasko, I. V Kazak, L. A Kazdaev, Kh. R Kejhar, Martin Kelly, Roger Keßler, G Khabelaehvili, I. D Khabelashvili, I. D Khaibullin, I. B Khodasevich, V. V Khodaseyich, V. V Khomsevich, V. V Khytko, V. I Knothe, P Koch, E Kogler, R Kolltsch, A Kolodii, V. N Kolshlbaeva, G. H Kolyadenko, S. H Kolyadenko, S. N Komar, V. P Komarov, F. F Komarov, P. P Komarovsky, I. A Konopljanik, G. G Konov, V. I Kopchenov, V. I Korenev, S. A Korobeinlkov, V. P Korotov, V. F Korshunov, F. P Kostjunin, A. A Kothari, D. C Kotljarevsky, M. B Kotte, R Kreißig, U Krjuchkov, Yu. Yu Krynicki, J Kubátová, J Kuclriavtsev, E. M Kukovitsky, E. F Kulikauskas, V. S Kulyasova, O. A Kuokštis, E Kuroohkina, T. V Kuzemchenko, T. A Kuzmichov, A. V Kuzmin, O. S Küchler, R Landi, E Langner, J Laschena, M Lebedeva, N. I Leggieri, G Lehmann, D Lemke, H Lenkeit, K Leshchenko, M. E Leshchenko, M.E Ligachev, A. E Limanov, A. B Linnros, Jan Liu, Bai-Xin Luches, A Lukeš, I Lutterotti, L Lyaenko, V. S Lychagin, D. V Lykov, S. V Lysenko, Eh. V Lysenko, V. S Lämmel, B Makarov, V. H Makarov, V. N Makhmudov, M. A Malinin, A. A Maller, H Manenkov, A. A Manzhosov, Yu. A Marest, G Martino, M Martínez-Duart, J. M Maslakov, A. I Matthai, J Mesyats, G. A Metzig, K Mihailescu, I. N Mikhailova, G. N Miller, B Milutin, V. M Minaev, S. A Miotello, A Mogilnik, I. F Moncoffre, N Mordkovich, V. N Muller, R Murzin, I. G Musatova, L. V Müller, A Müller, H Nachring, F. K Naehring, F. K Nanai, L Nazarov, A. N Neahov, F. G Neelmeijer, C Netikšis, V Neubert, F Neumann, H Nevolin, T. N Nikitenkov, N. N Niklforov, A. I Nikolov, Borlslav Nikonov, A. A Novikov, A. P Novikov, A Novikov, P. L Novikova, G. M Oang, Quoc Chung Orlenko, V. F Ortlepp, H. G Otto, G Otto, Th Ozhur, G. E Ozur, G. E Panknin, D Panzner, M Pattachov, Ta. V Pavienko, A. A Pavlovich, V. N Peksheva, T. E Perrière, J Petrauskas, M Petrov, S. A Petrov, V. A Petukhov, V. Yu Pham, M.T Pichugin, V. F Piekoszewski, J Pirrwitz, A Pivovar, V. S Plotnikov, A. E Plotnikov, S.V Poape, W Pochrybniak, C Pogrebnjak, A A. D Pogrebnjak, A. D Polman, A Pompe, A Pompe, V Pompe, W Pons, F Pop, S. S Popor, B. T Popov, P. B Popov, V. P Poshelt, M Posselt, M Potemkin, G. V Prager, L Pranevičius, L Preuß, E Principi, G Proakurovaky, D. I Proakurovskii, D. I Proekuroveky, O. I Prokofiev, D. D Prokopenko, V. B Proskuroveky, D. I Proskurovsky, D. I Psoskdhovsky, D. E Pushkareva, G. V Pyatkova, T. M Quaranta, F Quian, L. S Radjabov, O Rauschenbach, B Reeson, K. J Reiße, G Remnjev, G. E Reutberg, H Reuther, H Richter, E Richter, Edgar Richter, F Richter, H. H Richter, K Ritscheli, C Romanov, I. G Romanov, S. I Romanuk, B. N Rossi, M Rotahtein, V. P Rother, B Rudko, G. Yu Ruzimov, Sh. M Ryzhnitsyn, A. B Rzewuski, H Röhrich, J Sadovskaya, O. L Savchenko, A. O Scardi, P Schade, K Schindler, A Scholz, U Schäfer, O Schöneich, B Schöneich, J Semerak, M. M Semyannikov, V. E Shalnov, A. V Sharkeevt, Yu. P Shlopak, N. V Shmyrin, A. J Shpilevsky, E. M Siairoth, P Sieber, N Siegel, J Sikolenko, V. V Sinke, W. C Sioshansi, Piran Skornyakov, I. V Skorupa, W Skorupa, Wolfgang Slobodich, S. V Sobeslavsky, E Sobolev, N. A Solmi, S Soroka, V. I Sotnikov, G. V Starikova, T. I Stary, F Stavrov, Vi Steiger, B Stekolnikov, A. F Stepina, N. P Stiller, W Stock, D Stolk, P. A Strümpfe, J Stuckerfc, I . A Subotowicz, M Suchaneck, G Suvorov, A. V Szüce, I. S Tamulevičius, S Tan, Fan Teselkin, A. V Thomé, L Tija, S. A Tillack, B Tkach, Yu. V Tkachenko, A. S Toaasz, Skrabka Tokarev, A. S Tokarevski, V. V Tolonics, J Tomasi, A Tousset, J Tretiakov, V. V Trifonov, I Troitsky, V. Yu Trushin, Yu. V Turkin, A. A Turos, A Tyschenko, I. E Uglot, V. V Uglov, V. V Ulyashin, A. B Ulyashin, A. G Urmanov, A. R Ursu, I Uvarov, V. T Vajtai, R Valakh, M. Ya Valentini, A Valyaev, A. N Vanhellemonta, Jan Varbanov, R Vasiliev, O Vasilyev, A. L Velikov, L. V Vellmar, S Vetter, E Vetter, J Vinzelberg, H Vjatkin, A. P Vobonkdv, V. P Voelskow, M Voevodova, A. V Wagner, S Weber, B Werner, Z Wesch, W Wieser, E Wohlfarth, D Wolf, F Wolf, R Wolff, D Wollschlager, K Wollschläger, K Yaaada, Isao Yakubovlch, N. I Yanovski, V. P Yanovskii, V. P Yurchenko, V. A Zaitsev, A. M Zaroslov, D. Yu Zarqba, J Zchukova, I. B Zemek, J Zenkevich, A. V Zenkevich, A.V Zhukova, S. I Zhvavyi, S. P Zimmer, K Zinovjev, V. A Zohukova, T. B Zotov, S. D |
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Ageev, V Akchulakov, M. T Albert, M Albrecht, J Aleksandrov, L. N Aleshin, A. N Aliev, V. Sh Antropov, A. lf Arbuzov, V. Y Artsimovich, M. V Ascheron, C Bachmann, T Baghaev, V. N Baither, D Bakaj, A. S Balandin, V. Iu Baljtjba, V. I Baltramiejünas, R Bandurin, Yu. A Banisch, R Barabanenkov, M. Y Baranov, A. N Bartl, Rolf-Reiner Bartsch, H Baryakhtar, I.V Bayadilov, E. M Becker, S Belousov, V. T Benyagoub, A Berova, D Bertolotti, M Bialoskozewski, J Bischoff, L Blochwitz, C Bobeth, M Bobitski, Ya. V Bogdenovich, B.Yu Brauns, B Budinavičius, J Bugiel, E Bumay, Yu. A Burenkov, A. F Busin, Y. G Byzhnitsyn, A. B Bärinann, J Cestari, C Checha, V. P Chelnokov, V. E Chernakova, A Chernenko, S. V Choi, G. H Choi, Kong Hyon Choupyatova, L Chudoba, T Cháb, V Claverie, A Climent, A Craciun, V Dancheva, E Danilin, A.B Danilovich, J De Veirman, Ann Deltschew, R Dement'ev, B.P Demkovich, I. V Deshkovskaya, A. A Dietsch, R Dietze, H. J Dilk, I. A Domanevskii, D. S Domanewskii, D. S Domorod, N. E Donnet, C Drako, V. M Drandarov, Novak Drechsler, L Driesel, W Drigo, A. V Dudonis, J Dvurechenskii, A. V Dvurechenskii, A.V Dvurechensky, A. V Emiraliev, A Eolikaaakas, V. S Erfurth, M Erikhodko, I. I Evseev, B. S Feodorov, A. N Ferrari, A Feudel, T Filimonov, Yu. V Fischer, K Furmonavičius, D Gancharik, T. S Garapadskii, A. A Gavrilov, M. M Gaška, R Geiler, H. D Geisler, V. A Geßner, T Gilpérez, J. M Goltsev, V. P Gorbachenko, S. G Gorin, S. N Gotra, Z. Fu Gotra, Z. Yu Grande, I. Y Gribkovskii, R. V Grigorjev, L. S Groetzschel, R Grotzachel, F Grótzschel, R Grötzschel, R Grünewald, W Gunot, U Gupta, A Gusakov, G. M Gusinsky, G. M Guzman, L Gänsicke, F Gärtner, K Götz, G Hee, V Heera, V Helming, K Hemment, P. L. F Henke, D Hentschel, E Hentschel, R Hertens, A Hesse, K Hevesi, I Hevolin, T. H Heydenreich, J Hlávka, J Hoehl, D Hoeppner, K Hoffmann, W Hohauth, K Hohmuth, Karl Horoderiski, A Höfner, P Hörig, W Hüller, J Itin, V. I Ivanov, O. M Ivlev, G. D Iwaki, Masaya Jiřfček, P Jiřífiček, P Johansen, H Kachurin, G. A Kaczanowski, J Kagadey, V. A Kalinushkin, V. P Kanter, B. Z Kasko, I. V Kazak, L. A Kazdaev, Kh. R Kejhar, Martin Kelly, Roger Keßler, G Khabelaehvili, I. D Khabelashvili, I. D Khaibullin, I. B Khodasevich, V. V Khodaseyich, V. V Khomsevich, V. V Khytko, V. I Knothe, P Koch, E Kogler, R Kolltsch, A Kolodii, V. N Kolshlbaeva, G. H Kolyadenko, S. H Kolyadenko, S. N Komar, V. P Komarov, F. F Komarov, P. P Komarovsky, I. A Konopljanik, G. G Konov, V. I Kopchenov, V. I Korenev, S. A Korobeinlkov, V. P Korotov, V. F Korshunov, F. P Kostjunin, A. A Kothari, D. C Kotljarevsky, M. B Kotte, R Kreißig, U Krjuchkov, Yu. Yu Krynicki, J Kubátová, J Kuclriavtsev, E. M Kukovitsky, E. F Kulikauskas, V. S Kulyasova, O. A Kuokštis, E Kuroohkina, T. V Kuzemchenko, T. A Kuzmichov, A. V Kuzmin, O. S Küchler, R Landi, E Langner, J Laschena, M Lebedeva, N. I Leggieri, G Lehmann, D Lemke, H Lenkeit, K Leshchenko, M. E Leshchenko, M.E Ligachev, A. E Limanov, A. B Linnros, Jan Liu, Bai-Xin Luches, A Lukeš, I Lutterotti, L Lyaenko, V. S Lychagin, D. V Lykov, S. V Lysenko, Eh. V Lysenko, V. S Lämmel, B Makarov, V. H Makarov, V. N Makhmudov, M. A Malinin, A. A Maller, H Manenkov, A. A Manzhosov, Yu. A Marest, G Martino, M Martínez-Duart, J. M Maslakov, A. I Matthai, J Mesyats, G. A Metzig, K Mihailescu, I. N Mikhailova, G. N Miller, B Milutin, V. M Minaev, S. A Miotello, A Mogilnik, I. F Moncoffre, N Mordkovich, V. N Muller, R Murzin, I. G Musatova, L. V Müller, A Müller, H Nachring, F. K Naehring, F. K Nanai, L Nazarov, A. N Neahov, F. G Neelmeijer, C Netikšis, V Neubert, F Neumann, H Nevolin, T. N Nikitenkov, N. N Niklforov, A. I Nikolov, Borlslav Nikonov, A. A Novikov, A. P Novikov, A Novikov, P. L Novikova, G. M Oang, Quoc Chung Orlenko, V. F Ortlepp, H. G Otto, G Otto, Th Ozhur, G. E Ozur, G. E Panknin, D Panzner, M Pattachov, Ta. V Pavienko, A. A Pavlovich, V. N Peksheva, T. E Perrière, J Petrauskas, M Petrov, S. A Petrov, V. A Petukhov, V. Yu Pham, M.T Pichugin, V. F Piekoszewski, J Pirrwitz, A Pivovar, V. S Plotnikov, A. E Plotnikov, S.V Poape, W Pochrybniak, C Pogrebnjak, A A. D Pogrebnjak, A. D Polman, A Pompe, A Pompe, V Pompe, W Pons, F Pop, S. S Popor, B. T Popov, P. B Popov, V. P Poshelt, M Posselt, M Potemkin, G. V Prager, L Pranevičius, L Preuß, E Principi, G Proakurovaky, D. I Proakurovskii, D. I Proekuroveky, O. I Prokofiev, D. D Prokopenko, V. B Proskuroveky, D. I Proskurovsky, D. I Psoskdhovsky, D. E Pushkareva, G. V Pyatkova, T. M Quaranta, F Quian, L. S Radjabov, O Rauschenbach, B Reeson, K. J Reiße, G Remnjev, G. E Reutberg, H Reuther, H Richter, E Richter, Edgar Richter, F Richter, H. H Richter, K Ritscheli, C Romanov, I. G Romanov, S. I Romanuk, B. N Rossi, M Rotahtein, V. P Rother, B Rudko, G. Yu Ruzimov, Sh. M Ryzhnitsyn, A. B Rzewuski, H Röhrich, J Sadovskaya, O. L Savchenko, A. O Scardi, P Schade, K Schindler, A Scholz, U Schäfer, O Schöneich, B Schöneich, J Semerak, M. M Semyannikov, V. E Shalnov, A. V Sharkeevt, Yu. P Shlopak, N. V Shmyrin, A. J Shpilevsky, E. M Siairoth, P Sieber, N Siegel, J Sikolenko, V. V Sinke, W. C Sioshansi, Piran Skornyakov, I. V Skorupa, W Skorupa, Wolfgang Slobodich, S. V Sobeslavsky, E Sobolev, N. A Solmi, S Soroka, V. I Sotnikov, G. V Starikova, T. I Stary, F Stavrov, Vi Steiger, B Stekolnikov, A. F Stepina, N. P Stiller, W Stock, D Stolk, P. A Strümpfe, J Stuckerfc, I . A Subotowicz, M Suchaneck, G Suvorov, A. V Szüce, I. S Tamulevičius, S Tan, Fan Teselkin, A. V Thomé, L Tija, S. A Tillack, B Tkach, Yu. V Tkachenko, A. S Toaasz, Skrabka Tokarev, A. S Tokarevski, V. V Tolonics, J Tomasi, A Tousset, J Tretiakov, V. V Trifonov, I Troitsky, V. Yu Trushin, Yu. V Turkin, A. A Turos, A Tyschenko, I. E Uglot, V. V Uglov, V. V Ulyashin, A. B Ulyashin, A. G Urmanov, A. R Ursu, I Uvarov, V. T Vajtai, R Valakh, M. Ya Valentini, A Valyaev, A. N Vanhellemonta, Jan Varbanov, R Vasiliev, O Vasilyev, A. L Velikov, L. V Vellmar, S Vetter, E Vetter, J Vinzelberg, H Vjatkin, A. P Vobonkdv, V. P Voelskow, M Voevodova, A. V Wagner, S Weber, B Werner, Z Wesch, W Wieser, E Wohlfarth, D Wolf, F Wolf, R Wolff, D Wollschlager, K Wollschläger, K Yaaada, Isao Yakubovlch, N. I Yanovski, V. P Yanovskii, V. P Yurchenko, V. A Zaitsev, A. M Zaroslov, D. Yu Zarqba, J Zchukova, I. B Zemek, J Zenkevich, A. V Zenkevich, A.V Zhukova, S. I Zhvavyi, S. P Zimmer, K Zinovjev, V. A Zohukova, T. B Zotov, S. D |
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| doi_str |
10.1515/9783112575666 |
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QC611.6.S9 |
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2024-10-11T08:44:50.835Z |
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IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="a">[Online-Ausgabe]</subfield></datafield><datafield tag="538" ind1=" " ind2=" "><subfield code="a">Mode of access: Internet via World Wide Web.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In German</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">NON-CLASSIFIABLE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SCIENCE / Physics / Condensed Matter</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ageev, V</subfield><subfield code="e">mitwirkender</subfield><subfield code="4">ctb</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Akchulakov, M. 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code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-751</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2045</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-Mit1</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-Zi4</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2063</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-951</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ISIL_DE-Mh35</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">BO</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">537.622</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">20</subfield><subfield code="1">01</subfield><subfield code="x">0084</subfield><subfield code="b">4111602932</subfield><subfield code="h">CATDESC_DGR-EB</subfield><subfield code="u">CATDESC_DGR-EB</subfield><subfield code="y">z</subfield><subfield code="z">02-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">21</subfield><subfield code="1">01</subfield><subfield code="x">0046</subfield><subfield code="b">4101028265</subfield><subfield code="h">ebook_2023_degruyter_ebs</subfield><subfield code="k">Freie Nutzung im <a href="http://nbn-resolving.de/urn:nbn:de:gbv:46-campusnetz9" Target="_blank">Campusnetz</a> der Universitaet und der Hochschulen im Lande Bremen</subfield><subfield code="y">zza</subfield><subfield code="z">25-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">22</subfield><subfield code="1">01</subfield><subfield code="x">0018</subfield><subfield code="b">4109757215</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">s</subfield><subfield code="j">--%%--</subfield><subfield code="h">SUBedegebs</subfield><subfield code="y">zu</subfield><subfield code="z">01-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">23</subfield><subfield code="1">01</subfield><subfield code="x">0830</subfield><subfield code="b">4091698158</subfield><subfield code="h">olr-degruyter3</subfield><subfield code="u">i</subfield><subfield code="y">z</subfield><subfield code="z">16-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">24</subfield><subfield code="1">01</subfield><subfield code="x">0008</subfield><subfield code="b">4094854460</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">s</subfield><subfield code="j">--%%--</subfield><subfield code="h">olr-dgebs</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="k">Zugriff auf den Volltext nur für Universitätsangehörige innerhalb des Netzes der Universität Kiel (Campuslizenz).</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">31</subfield><subfield code="1">01</subfield><subfield code="x">0027</subfield><subfield code="b">4094723129</subfield><subfield code="h">OLR-DeGruyterEBS</subfield><subfield code="k">Zugang zeitlich begrenzt. Dauerhaften Zugang über Formular für Anschaffungsvorschläge anfragen.</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">34</subfield><subfield code="1">01</subfield><subfield code="x">3551</subfield><subfield code="b">4094056602</subfield><subfield code="h">OLR-EBAKALL-EBS</subfield><subfield code="k">Zugriff nur im Netz der HAW Hamburg</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">60</subfield><subfield code="1">01</subfield><subfield code="x">0705</subfield><subfield code="b">4094610081</subfield><subfield code="h">DeGruyterArchiv</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="k">Nur für Angehörige der HSU: Volltextzugang von außerhalb des Campus mit Anmeldung über Shibboleth mit Ihrer Bibliothekskennung</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">65</subfield><subfield code="1">01</subfield><subfield code="x">0003</subfield><subfield code="b">4094713085</subfield><subfield code="c">03</subfield><subfield code="f">--%%--</subfield><subfield code="d">ebook</subfield><subfield code="e">--%%--</subfield><subfield code="j">--%%--</subfield><subfield code="h">OLR-ZDB-23-GPS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">k3o</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">69</subfield><subfield code="1">01</subfield><subfield code="x">0009</subfield><subfield code="b">4094766340</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="u">BF_dG</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">72</subfield><subfield code="1">01</subfield><subfield code="x">0035</subfield><subfield code="b">4117564382</subfield><subfield code="h">OLR-DG-PDA11SSHE</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="y">z</subfield><subfield code="z">13-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">90</subfield><subfield code="1">01</subfield><subfield code="x">3090</subfield><subfield code="b">4094810390</subfield><subfield code="h">OLR-HILdegruyter</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">110</subfield><subfield code="1">01</subfield><subfield code="x">3110</subfield><subfield code="b">4097722824</subfield><subfield code="h">OLR-DEGRUYTER-EBS-2018</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="k">Volltextzugriff nur für berechtigte Personen über das Campusnetz</subfield><subfield code="y">z</subfield><subfield code="z">22-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">120</subfield><subfield code="1">01</subfield><subfield code="x">0715</subfield><subfield code="b">4112991312</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">g</subfield><subfield code="j">--%%--</subfield><subfield code="h">alma</subfield><subfield code="y">z</subfield><subfield code="z">07-04-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">122</subfield><subfield code="1">01</subfield><subfield code="x">0897</subfield><subfield code="b">4094546103</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">130</subfield><subfield code="1">01</subfield><subfield code="x">0700</subfield><subfield code="b">4094898867</subfield><subfield code="h">OLR-deGruyter-EBA-EBKALL</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">140</subfield><subfield code="1">01</subfield><subfield code="x">0839</subfield><subfield code="b">409460748X</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">147</subfield><subfield code="1">01</subfield><subfield code="x">3528</subfield><subfield code="b">4094971483</subfield><subfield code="h">OLR-EBS-DG</subfield><subfield code="k">Multiuser | freigeschaltet für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">264</subfield><subfield code="1">01</subfield><subfield code="x">3264</subfield><subfield code="b">4094661980</subfield><subfield code="h">OLR-deGruyter-EBS</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">18-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">285</subfield><subfield code="1">01</subfield><subfield code="x">0517</subfield><subfield code="b">4590344173</subfield><subfield code="h">OLR-GRUY-TEST</subfield><subfield code="k">Zugriff zeitlich begrenzt (EBS)</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt.</subfield><subfield code="y">z</subfield><subfield code="z">10-10-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">370</subfield><subfield code="1">01</subfield><subfield code="x">4370</subfield><subfield code="b">4094261249</subfield><subfield code="h">EBS deGruyter</subfield><subfield code="k">Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots.</subfield><subfield code="u">i</subfield><subfield code="y">z</subfield><subfield code="z">17-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">736</subfield><subfield code="1">01</subfield><subfield code="x">4736</subfield><subfield code="b">4494000973</subfield><subfield code="h">DeGryuterEBS2024</subfield><subfield code="u">verv</subfield><subfield code="y">zeg</subfield><subfield code="z">29-02-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2001</subfield><subfield code="1">01</subfield><subfield code="x">DE-21</subfield><subfield code="b">4086425076</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">kp</subfield><subfield code="y">l01</subfield><subfield code="z">10-03-22</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2006</subfield><subfield code="1">01</subfield><subfield code="x">DE-14</subfield><subfield code="b">4426270537</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">--%%--</subfield><subfield code="y">l01</subfield><subfield code="z">05-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2010</subfield><subfield code="1">01</subfield><subfield code="x">DE-15</subfield><subfield code="b">4426060532</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Elektronischer Volltext - Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">05-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2020</subfield><subfield code="1">01</subfield><subfield code="x">DE-Ch1</subfield><subfield code="b">4438651824</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">15-12-23</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2027</subfield><subfield code="1">01</subfield><subfield code="x">DE-105</subfield><subfield code="b">4460329433</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">17-01-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2044</subfield><subfield code="1">01</subfield><subfield code="x">DE-751</subfield><subfield code="b">4586337389</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">eBook de Gruyter</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Campuslizenz bis 30.09.2025. Bitte beachten Sie die Nutzungshinweise auf unserer Homepage (de Gruyter)</subfield><subfield code="y">l01</subfield><subfield code="z">02-10-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2045</subfield><subfield code="1">01</subfield><subfield code="x">DE-Mit1</subfield><subfield code="b">4489565895</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Volltext - Campuslizenz</subfield><subfield code="y">l01</subfield><subfield code="z">21-02-24</subfield></datafield><datafield tag="980" ind1=" " ind2=" "><subfield code="2">2050</subfield><subfield code="1">01</subfield><subfield code="x">DE-Zi4</subfield><subfield code="b">4438651832</subfield><subfield code="c">00</subfield><subfield code="f">--%%--</subfield><subfield code="d">--%%--</subfield><subfield code="e">--%%--</subfield><subfield code="j">n</subfield><subfield code="k">Zugriff im HSZG-Campusnetz. 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| score |
7.166501 |