Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires

In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportuni...
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Autor*in:	Geydt, Pavel [verfasserIn] Dunaevskiy, M. S. Lähderanta, Erkki

Format:	E-Book
Sprache:	Englisch

Erschienen:	Erscheinungsort nicht ermittelbar: InTechOpen ; 2017

Rechteinformationen:	Open Access Creative Commons ; https://creativecommons.org/licenses/by/3.0

Schlagwörter:	Condensed matter physics (liquid state & solid state physics)

Umfang:	1 Online-Ressource

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Katalog-ID:	1836495269

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allfields	(DE-627)1836495269 (DE-599)KEP077623215 (OCoLC)1286358081 (OAPEN)49221 (EBP)077623215 DE-627 eng DE-627 rda eng PHFC bicssc Geydt, Pavel verfasserin aut Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires [Erscheinungsort nicht ermittelbar] InTechOpen 2017 1 Online-Ressource Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Open Access Unrestricted online access star In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described Creative Commons https://creativecommons.org/licenses/by/3.0 cc English Condensed matter physics (liquid state & solid state physics) Dunaevskiy, M. 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spelling	(DE-627)1836495269 (DE-599)KEP077623215 (OCoLC)1286358081 (OAPEN)49221 (EBP)077623215 DE-627 eng DE-627 rda eng PHFC bicssc Geydt, Pavel verfasserin aut Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires [Erscheinungsort nicht ermittelbar] InTechOpen 2017 1 Online-Ressource Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Open Access Unrestricted online access star In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described Creative Commons https://creativecommons.org/licenses/by/3.0 cc English Condensed matter physics (liquid state & solid state physics) Dunaevskiy, M. S. oth Lähderanta, Erkki oth https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf X:OAPEN Verlag kostenfrei https://library.oapen.org/handle/20.500.12657/49221 X:OAPEN Verlag kostenfrei ZDB-94-OAL GBV_ILN_22 ISIL_DE-18 SYSFLAG_1 GBV_KXP GBV_ILN_23 ISIL_DE-830 GBV_ILN_30 ISIL_DE-104 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_39 ISIL_DE-547 GBV_ILN_40 ISIL_DE-7 GBV_ILN_63 ISIL_DE-Wim2 GBV_ILN_65 ISIL_DE-3 GBV_ILN_70 ISIL_DE-89 GBV_ILN_72 ISIL_DE-35 GBV_ILN_95 ISIL_DE-542 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_136 ISIL_DE-Wis1 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_161 ISIL_DE-960 GBV_ILN_187 ISIL_DE-Ki95 GBV_ILN_213 ISIL_DE-551 GBV_ILN_230 ISIL_DE-552 GBV_ILN_283 ISIL_DE-Ha163 GBV_ILN_293 ISIL_DE-960-3 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_603 ISIL_DE-B1556 GBV_ILN_808 GBV_ILN_2403 ISIL_DE-LFER BO 22 01 0018 428015127X OLR-ZDB-94-OAL OAPEN Library zu 01-03-23 23 01 0830 4280703469 OLR-OAPEN f z 01-03-23 30 01 0104 4281064427 GBV-OAPEN z 01-03-23 31 01 0027 4280346046 z 01-03-23 34 01 3551 4278901550 OLR-OAPEN zi002 01-03-23 39 01 0547 4281255680 GBV-OAPEN ke 01-03-23 40 01 0007 4279970041 OLR-OAPEN xsn 01-03-23 63 01 3401 4281638733 E-Books LF GBV-OAPEN z 01-03-23 65 01 0003 4281888039 OLR-OAPEN z 01-03-23 70 01 0089 4280524440 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 72 01 0035 4278724217 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 95 01 3095 434325190X OLR-OAL Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 24-06-23 110 01 3110 4281440739 OLR-GBV-OAPEN Open Access z 01-03-23 136 01 3526 4279615527 OLR-OAPEN z 01-03-23 147 01 3528 4282086696 OLR-OAPEN frei verfügbar für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 01-03-23 161 01 0960 4278158238 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 187 01 3520 4278542712 JSTOR Open Access eBook z 28-02-23 213 01 0551 4279256721 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 230 01 0552 4279433909 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 283 01 3283 427979281X OLR-OAL z 01-03-23 293 01 3293 4278336993 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 370 01 4370 4279079293 OLR-FREE Kostenloser Zugriff z 01-03-23 603 01 4603 4277980007 OLR-OAPEN Bitte beachten Sie die Nutzungsbedingungen und Copyright-Bestimmungen des Verlages/Herausgebers. z 28-02-23 808 01 4808 4280882533 OLR-OAPEN OAPEN Library zg 01-03-23 2403 01 DE-LFER 4308591376 00 --%%-- --%%-- n --%%-- l01 13-04-23 22 01 0018 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 23 01 0830 https://library.oapen.org/handle/20.500.12657/49221 30 01 0104 Open Access https://library.oapen.org/handle/20.500.12657/49221 31 01 0027 eBook GBV-OAPEN https://library.oapen.org/handle/20.500.12657/49221 34 01 3551 OpenAccess https://library.oapen.org/handle/20.500.12657/49221 40 01 0007 Volltext, Open Access https://library.oapen.org/handle/20.500.12657/49221 63 01 3401 E-Book https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Open Access https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Dieser Titel ist Teil einer Datenbank http://www.bibliothek.uni-regensburg.de/dbinfo/detail.php?titel_id=10728&bib_id=ulb_hal 70 01 0089 https://library.oapen.org/handle/20.500.12657/49221 LF 72 01 0035 https://library.oapen.org/handle/20.500.12657/49221 95 01 3095 https://library.oapen.org/handle/20.500.12657/49221 110 01 3110 Open Access https://library.oapen.org/handle/20.500.12657/49221 136 01 3526 Open Access https://library.oapen.org/handle/20.500.12657/49221 147 01 3528 https://library.oapen.org/handle/20.500.12657/49221 161 01 0960 https://library.oapen.org/handle/20.500.12657/49221 LF 187 01 3520 https://library.oapen.org/handle/20.500.12657/49221 213 01 0551 https://library.oapen.org/handle/20.500.12657/49221 230 01 0552 https://library.oapen.org/handle/20.500.12657/49221 283 01 3283 https://library.oapen.org/handle/20.500.12657/49221 293 01 3293 https://library.oapen.org/handle/20.500.12657/49221 LF 370 01 4370 https://library.oapen.org/handle/20.500.12657/49221 603 01 4603 https://library.oapen.org/handle/20.500.12657/49221 808 01 4808 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 2403 01 DE-LFER https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf 31 01 0027 00 eBook GBV-OAPEN 22 01 0018 OLR-ZDB-94-OAL 23 01 0830 OLR-OAPEN 30 01 0104 GBV-OAPEN 34 01 3551 OLR-OAPEN 39 01 0547 GBV-OAPEN 39 01 0547 LF 40 01 0007 OLR-OAPEN 63 01 3401 E-Books LF GBV-OAPEN 65 01 0003 OLR-OAPEN 70 01 0089 OLR-OAPEN-OA 72 01 0035 OLR-OAPEN-OA 95 01 3095 OLR-OAL 110 01 3110 OLR-GBV-OAPEN 136 01 3526 OLR-OAPEN 147 01 3528 OLR-OAPEN 161 01 0960 OLR-OAPEN 213 01 0551 OLR-OAPEN 230 01 0552 OLR-OAPEN 283 01 3283 OLR-OAL 293 01 3293 OLR-OAPEN 370 01 4370 OLR-FREE 370 01 4370 olr-ebook GBV-OAPEN 603 01 4603 OLR-OAPEN 808 01 4808 OLR-OAPEN
allfields_unstemmed	(DE-627)1836495269 (DE-599)KEP077623215 (OCoLC)1286358081 (OAPEN)49221 (EBP)077623215 DE-627 eng DE-627 rda eng PHFC bicssc Geydt, Pavel verfasserin aut Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires [Erscheinungsort nicht ermittelbar] InTechOpen 2017 1 Online-Ressource Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Open Access Unrestricted online access star In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described Creative Commons https://creativecommons.org/licenses/by/3.0 cc English Condensed matter physics (liquid state & solid state physics) Dunaevskiy, M. S. oth Lähderanta, Erkki oth https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf X:OAPEN Verlag kostenfrei https://library.oapen.org/handle/20.500.12657/49221 X:OAPEN Verlag kostenfrei ZDB-94-OAL GBV_ILN_22 ISIL_DE-18 SYSFLAG_1 GBV_KXP GBV_ILN_23 ISIL_DE-830 GBV_ILN_30 ISIL_DE-104 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_39 ISIL_DE-547 GBV_ILN_40 ISIL_DE-7 GBV_ILN_63 ISIL_DE-Wim2 GBV_ILN_65 ISIL_DE-3 GBV_ILN_70 ISIL_DE-89 GBV_ILN_72 ISIL_DE-35 GBV_ILN_95 ISIL_DE-542 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_136 ISIL_DE-Wis1 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_161 ISIL_DE-960 GBV_ILN_187 ISIL_DE-Ki95 GBV_ILN_213 ISIL_DE-551 GBV_ILN_230 ISIL_DE-552 GBV_ILN_283 ISIL_DE-Ha163 GBV_ILN_293 ISIL_DE-960-3 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_603 ISIL_DE-B1556 GBV_ILN_808 GBV_ILN_2403 ISIL_DE-LFER BO 22 01 0018 428015127X OLR-ZDB-94-OAL OAPEN Library zu 01-03-23 23 01 0830 4280703469 OLR-OAPEN f z 01-03-23 30 01 0104 4281064427 GBV-OAPEN z 01-03-23 31 01 0027 4280346046 z 01-03-23 34 01 3551 4278901550 OLR-OAPEN zi002 01-03-23 39 01 0547 4281255680 GBV-OAPEN ke 01-03-23 40 01 0007 4279970041 OLR-OAPEN xsn 01-03-23 63 01 3401 4281638733 E-Books LF GBV-OAPEN z 01-03-23 65 01 0003 4281888039 OLR-OAPEN z 01-03-23 70 01 0089 4280524440 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 72 01 0035 4278724217 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 95 01 3095 434325190X OLR-OAL Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 24-06-23 110 01 3110 4281440739 OLR-GBV-OAPEN Open Access z 01-03-23 136 01 3526 4279615527 OLR-OAPEN z 01-03-23 147 01 3528 4282086696 OLR-OAPEN frei verfügbar für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 01-03-23 161 01 0960 4278158238 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 187 01 3520 4278542712 JSTOR Open Access eBook z 28-02-23 213 01 0551 4279256721 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 230 01 0552 4279433909 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 283 01 3283 427979281X OLR-OAL z 01-03-23 293 01 3293 4278336993 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 370 01 4370 4279079293 OLR-FREE Kostenloser Zugriff z 01-03-23 603 01 4603 4277980007 OLR-OAPEN Bitte beachten Sie die Nutzungsbedingungen und Copyright-Bestimmungen des Verlages/Herausgebers. z 28-02-23 808 01 4808 4280882533 OLR-OAPEN OAPEN Library zg 01-03-23 2403 01 DE-LFER 4308591376 00 --%%-- --%%-- n --%%-- l01 13-04-23 22 01 0018 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 23 01 0830 https://library.oapen.org/handle/20.500.12657/49221 30 01 0104 Open Access https://library.oapen.org/handle/20.500.12657/49221 31 01 0027 eBook GBV-OAPEN https://library.oapen.org/handle/20.500.12657/49221 34 01 3551 OpenAccess https://library.oapen.org/handle/20.500.12657/49221 40 01 0007 Volltext, Open Access https://library.oapen.org/handle/20.500.12657/49221 63 01 3401 E-Book https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Open Access https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Dieser Titel ist Teil einer Datenbank http://www.bibliothek.uni-regensburg.de/dbinfo/detail.php?titel_id=10728&bib_id=ulb_hal 70 01 0089 https://library.oapen.org/handle/20.500.12657/49221 LF 72 01 0035 https://library.oapen.org/handle/20.500.12657/49221 95 01 3095 https://library.oapen.org/handle/20.500.12657/49221 110 01 3110 Open Access https://library.oapen.org/handle/20.500.12657/49221 136 01 3526 Open Access https://library.oapen.org/handle/20.500.12657/49221 147 01 3528 https://library.oapen.org/handle/20.500.12657/49221 161 01 0960 https://library.oapen.org/handle/20.500.12657/49221 LF 187 01 3520 https://library.oapen.org/handle/20.500.12657/49221 213 01 0551 https://library.oapen.org/handle/20.500.12657/49221 230 01 0552 https://library.oapen.org/handle/20.500.12657/49221 283 01 3283 https://library.oapen.org/handle/20.500.12657/49221 293 01 3293 https://library.oapen.org/handle/20.500.12657/49221 LF 370 01 4370 https://library.oapen.org/handle/20.500.12657/49221 603 01 4603 https://library.oapen.org/handle/20.500.12657/49221 808 01 4808 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 2403 01 DE-LFER https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf 31 01 0027 00 eBook GBV-OAPEN 22 01 0018 OLR-ZDB-94-OAL 23 01 0830 OLR-OAPEN 30 01 0104 GBV-OAPEN 34 01 3551 OLR-OAPEN 39 01 0547 GBV-OAPEN 39 01 0547 LF 40 01 0007 OLR-OAPEN 63 01 3401 E-Books LF GBV-OAPEN 65 01 0003 OLR-OAPEN 70 01 0089 OLR-OAPEN-OA 72 01 0035 OLR-OAPEN-OA 95 01 3095 OLR-OAL 110 01 3110 OLR-GBV-OAPEN 136 01 3526 OLR-OAPEN 147 01 3528 OLR-OAPEN 161 01 0960 OLR-OAPEN 213 01 0551 OLR-OAPEN 230 01 0552 OLR-OAPEN 283 01 3283 OLR-OAL 293 01 3293 OLR-OAPEN 370 01 4370 OLR-FREE 370 01 4370 olr-ebook GBV-OAPEN 603 01 4603 OLR-OAPEN 808 01 4808 OLR-OAPEN
allfieldsGer	(DE-627)1836495269 (DE-599)KEP077623215 (OCoLC)1286358081 (OAPEN)49221 (EBP)077623215 DE-627 eng DE-627 rda eng PHFC bicssc Geydt, Pavel verfasserin aut Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires [Erscheinungsort nicht ermittelbar] InTechOpen 2017 1 Online-Ressource Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Open Access Unrestricted online access star In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described Creative Commons https://creativecommons.org/licenses/by/3.0 cc English Condensed matter physics (liquid state & solid state physics) Dunaevskiy, M. S. oth Lähderanta, Erkki oth https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf X:OAPEN Verlag kostenfrei https://library.oapen.org/handle/20.500.12657/49221 X:OAPEN Verlag kostenfrei ZDB-94-OAL GBV_ILN_22 ISIL_DE-18 SYSFLAG_1 GBV_KXP GBV_ILN_23 ISIL_DE-830 GBV_ILN_30 ISIL_DE-104 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_39 ISIL_DE-547 GBV_ILN_40 ISIL_DE-7 GBV_ILN_63 ISIL_DE-Wim2 GBV_ILN_65 ISIL_DE-3 GBV_ILN_70 ISIL_DE-89 GBV_ILN_72 ISIL_DE-35 GBV_ILN_95 ISIL_DE-542 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_136 ISIL_DE-Wis1 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_161 ISIL_DE-960 GBV_ILN_187 ISIL_DE-Ki95 GBV_ILN_213 ISIL_DE-551 GBV_ILN_230 ISIL_DE-552 GBV_ILN_283 ISIL_DE-Ha163 GBV_ILN_293 ISIL_DE-960-3 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_603 ISIL_DE-B1556 GBV_ILN_808 GBV_ILN_2403 ISIL_DE-LFER BO 22 01 0018 428015127X OLR-ZDB-94-OAL OAPEN Library zu 01-03-23 23 01 0830 4280703469 OLR-OAPEN f z 01-03-23 30 01 0104 4281064427 GBV-OAPEN z 01-03-23 31 01 0027 4280346046 z 01-03-23 34 01 3551 4278901550 OLR-OAPEN zi002 01-03-23 39 01 0547 4281255680 GBV-OAPEN ke 01-03-23 40 01 0007 4279970041 OLR-OAPEN xsn 01-03-23 63 01 3401 4281638733 E-Books LF GBV-OAPEN z 01-03-23 65 01 0003 4281888039 OLR-OAPEN z 01-03-23 70 01 0089 4280524440 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 72 01 0035 4278724217 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 95 01 3095 434325190X OLR-OAL Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 24-06-23 110 01 3110 4281440739 OLR-GBV-OAPEN Open Access z 01-03-23 136 01 3526 4279615527 OLR-OAPEN z 01-03-23 147 01 3528 4282086696 OLR-OAPEN frei verfügbar für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. 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allfieldsSound	(DE-627)1836495269 (DE-599)KEP077623215 (OCoLC)1286358081 (OAPEN)49221 (EBP)077623215 DE-627 eng DE-627 rda eng PHFC bicssc Geydt, Pavel verfasserin aut Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires [Erscheinungsort nicht ermittelbar] InTechOpen 2017 1 Online-Ressource Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Open Access Unrestricted online access star In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described Creative Commons https://creativecommons.org/licenses/by/3.0 cc English Condensed matter physics (liquid state & solid state physics) Dunaevskiy, M. S. oth Lähderanta, Erkki oth https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf X:OAPEN Verlag kostenfrei https://library.oapen.org/handle/20.500.12657/49221 X:OAPEN Verlag kostenfrei ZDB-94-OAL GBV_ILN_22 ISIL_DE-18 SYSFLAG_1 GBV_KXP GBV_ILN_23 ISIL_DE-830 GBV_ILN_30 ISIL_DE-104 GBV_ILN_31 ISIL_DE-27 GBV_ILN_34 ISIL_DE-18-302 GBV_ILN_39 ISIL_DE-547 GBV_ILN_40 ISIL_DE-7 GBV_ILN_63 ISIL_DE-Wim2 GBV_ILN_65 ISIL_DE-3 GBV_ILN_70 ISIL_DE-89 GBV_ILN_72 ISIL_DE-35 GBV_ILN_95 ISIL_DE-542 GBV_ILN_110 ISIL_DE-Luen4 GBV_ILN_136 ISIL_DE-Wis1 GBV_ILN_147 ISIL_DE-Fl3 GBV_ILN_161 ISIL_DE-960 GBV_ILN_187 ISIL_DE-Ki95 GBV_ILN_213 ISIL_DE-551 GBV_ILN_230 ISIL_DE-552 GBV_ILN_283 ISIL_DE-Ha163 GBV_ILN_293 ISIL_DE-960-3 GBV_ILN_370 ISIL_DE-1373 GBV_ILN_603 ISIL_DE-B1556 GBV_ILN_808 GBV_ILN_2403 ISIL_DE-LFER BO 22 01 0018 428015127X OLR-ZDB-94-OAL OAPEN Library zu 01-03-23 23 01 0830 4280703469 OLR-OAPEN f z 01-03-23 30 01 0104 4281064427 GBV-OAPEN z 01-03-23 31 01 0027 4280346046 z 01-03-23 34 01 3551 4278901550 OLR-OAPEN zi002 01-03-23 39 01 0547 4281255680 GBV-OAPEN ke 01-03-23 40 01 0007 4279970041 OLR-OAPEN xsn 01-03-23 63 01 3401 4281638733 E-Books LF GBV-OAPEN z 01-03-23 65 01 0003 4281888039 OLR-OAPEN z 01-03-23 70 01 0089 4280524440 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 72 01 0035 4278724217 OLR-OAPEN-OA OAPEN Online Library Open Access eBook z 01-03-23 95 01 3095 434325190X OLR-OAL Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 24-06-23 110 01 3110 4281440739 OLR-GBV-OAPEN Open Access z 01-03-23 136 01 3526 4279615527 OLR-OAPEN z 01-03-23 147 01 3528 4282086696 OLR-OAPEN frei verfügbar für Europa-Universität Flensburg, Hochschule Flensburg und Zentrale Hochschulbibliothek Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Die Weitergabe an Dritte sowie systematisches Downloaden sind untersagt. z 01-03-23 161 01 0960 4278158238 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 187 01 3520 4278542712 JSTOR Open Access eBook z 28-02-23 213 01 0551 4279256721 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 230 01 0552 4279433909 OLR-OAPEN OAPEN Online Library Open Access eBook z 01-03-23 283 01 3283 427979281X OLR-OAL z 01-03-23 293 01 3293 4278336993 OLR-OAPEN OAPEN Online Library Open Access eBook z 28-02-23 370 01 4370 4279079293 OLR-FREE Kostenloser Zugriff z 01-03-23 603 01 4603 4277980007 OLR-OAPEN Bitte beachten Sie die Nutzungsbedingungen und Copyright-Bestimmungen des Verlages/Herausgebers. z 28-02-23 808 01 4808 4280882533 OLR-OAPEN OAPEN Library zg 01-03-23 2403 01 DE-LFER 4308591376 00 --%%-- --%%-- n --%%-- l01 13-04-23 22 01 0018 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 23 01 0830 https://library.oapen.org/handle/20.500.12657/49221 30 01 0104 Open Access https://library.oapen.org/handle/20.500.12657/49221 31 01 0027 eBook GBV-OAPEN https://library.oapen.org/handle/20.500.12657/49221 34 01 3551 OpenAccess https://library.oapen.org/handle/20.500.12657/49221 40 01 0007 Volltext, Open Access https://library.oapen.org/handle/20.500.12657/49221 63 01 3401 E-Book https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Open Access https://library.oapen.org/handle/20.500.12657/49221 65 01 0003 Dieser Titel ist Teil einer Datenbank http://www.bibliothek.uni-regensburg.de/dbinfo/detail.php?titel_id=10728&bib_id=ulb_hal 70 01 0089 https://library.oapen.org/handle/20.500.12657/49221 LF 72 01 0035 https://library.oapen.org/handle/20.500.12657/49221 95 01 3095 https://library.oapen.org/handle/20.500.12657/49221 110 01 3110 Open Access https://library.oapen.org/handle/20.500.12657/49221 136 01 3526 Open Access https://library.oapen.org/handle/20.500.12657/49221 147 01 3528 https://library.oapen.org/handle/20.500.12657/49221 161 01 0960 https://library.oapen.org/handle/20.500.12657/49221 LF 187 01 3520 https://library.oapen.org/handle/20.500.12657/49221 213 01 0551 https://library.oapen.org/handle/20.500.12657/49221 230 01 0552 https://library.oapen.org/handle/20.500.12657/49221 283 01 3283 https://library.oapen.org/handle/20.500.12657/49221 293 01 3293 https://library.oapen.org/handle/20.500.12657/49221 LF 370 01 4370 https://library.oapen.org/handle/20.500.12657/49221 603 01 4603 https://library.oapen.org/handle/20.500.12657/49221 808 01 4808 Volltextzugang https://library.oapen.org/handle/20.500.12657/49221 2403 01 DE-LFER https://library.oapen.org/bitstream/id/7469fea8-544e-40a7-94a3-15f0b0da4dd6/55033.pdf 31 01 0027 00 eBook GBV-OAPEN 22 01 0018 OLR-ZDB-94-OAL 23 01 0830 OLR-OAPEN 30 01 0104 GBV-OAPEN 34 01 3551 OLR-OAPEN 39 01 0547 GBV-OAPEN 39 01 0547 LF 40 01 0007 OLR-OAPEN 63 01 3401 E-Books LF GBV-OAPEN 65 01 0003 OLR-OAPEN 70 01 0089 OLR-OAPEN-OA 72 01 0035 OLR-OAPEN-OA 95 01 3095 OLR-OAL 110 01 3110 OLR-GBV-OAPEN 136 01 3526 OLR-OAPEN 147 01 3528 OLR-OAPEN 161 01 0960 OLR-OAPEN 213 01 0551 OLR-OAPEN 230 01 0552 OLR-OAPEN 283 01 3283 OLR-OAL 293 01 3293 OLR-OAPEN 370 01 4370 OLR-FREE 370 01 4370 olr-ebook GBV-OAPEN 603 01 4603 OLR-OAPEN 808 01 4808 OLR-OAPEN
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topic_title	31 01 0027 00 eBook GBV-OAPEN Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires Condensed matter physics (liquid state & solid state physics)
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title	Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires
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title_sort	chapter opportunities of scanning probe microscopy for electrical, mechanical and electromechanical research of semiconductor nanowires
title_auth	Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires
abstract	In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described
abstractGer	In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described
abstract_unstemmed	In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described
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title_short	Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires
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Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. 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Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires

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