Radiation effects in silicon carbide

The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for app...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Lebedev, A. A. [verfasserIn]

Format:	E-Book
Sprache:	Englisch

Erschienen:	Millersville, Pennsylvania: Materials Research Forum ; 2017

Schlagwörter:	Materials science--Data processing Materials science ; Data processing Materials science, Data processing Electronic books
Formangabe:	Electronic books

Anmerkung:	Description based upon print version of record
Umfang:	1 online resource (172 pages)

Reihe:	Materials Research Foundations ; v.6 Materials Research Foundations Ser. ; v.6

Links:	Link aufrufen Volltext Volltext
ISBN:	978-1-945291-11-1

Katalog-ID:	873409752

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520			\|a The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed
520			\|a frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping
520			\|a 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap
520			\|a 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC
520			\|a 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors
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Indexfelder

author_variant	a a l aa aal
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oclc_num	1030346921
hierarchy_sort_str	2017
publishDate	2017
allfields	ebook 9781945291111 : 90.91 (NL),136.36 (UA),113.64 (3U),90.91 (1U) 978-1-945291-11-1 (DE-627)873409752 (DE-576)500503702 (DE-599)GBV873409752 (OCoLC)1030346921 (EBP)012903272 (EBL)4746649 (EBR)11300732 (EBC)EBC4746649 DE-627 ger DE-627 rda eng 620.11028499999998 Lebedev, A. A. verfasserin aut Radiation effects in silicon carbide by A. A. Lebedev. Millersville, Pennsylvania Materials Research Forum 2017 1 online resource (172 pages) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Materials Research Foundations v.6 Materials Research Foundations Ser. v.6 Description based upon print version of record The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Materials science--Data processing Materials science ; Data processing Materials science Data processing Electronic books Electronic books 9781945291104 Druck-Ausgabe Erscheint auch als 9781945291104 http://gbv.eblib.com/patron/FullRecord.aspx?p=4746649 Verlag Volltext https://ebookcentral.proquest.com/lib/kxp/detail.action?docID=4746649 X:EBC Verlag lizenzpflichtig Volltext ZDB-30-PAD ZDB-30-PQE GBV_ILN_370 ISIL_DE-1373 SYSFLAG_1 GBV_KXP GBV_ILN_2021 ISIL_DE-289 GBV_ILN_2148 ISIL_DE-950 BO 045F 620.11028499999998 370 01 4370 3976598275 olr-dda ebc Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots. i z 09-09-21 2021 01 DE-289 3845460342 00 --%%-- --%%-- --%%-- n l01 30-01-21 2148 01 DE-950 4207977414 00 --%%-- eBook ProQuest --%%-- n PDA-Angebot - nur für Hochschulangehörige der HfWU l01 09-11-22 370 01 4370 E-Book: Zugriff im HCU-Netz. Zugriff von auβerhalb nur für HCU-Angehörige möglich https://ebookcentral.proquest.com/lib/hcuhamburg-ebooks/detail.action?docID=4746649 2021 01 DE-289 https://ebookcentral.proquest.com/lib/kiz-uniulm/detail.action?docID=4746649 2148 01 DE-950 https://ebookcentral.proquest.com/lib/hfwu/detail.action?docID=4746649 370 01 4370 olr-dda ebc
spelling	ebook 9781945291111 : 90.91 (NL),136.36 (UA),113.64 (3U),90.91 (1U) 978-1-945291-11-1 (DE-627)873409752 (DE-576)500503702 (DE-599)GBV873409752 (OCoLC)1030346921 (EBP)012903272 (EBL)4746649 (EBR)11300732 (EBC)EBC4746649 DE-627 ger DE-627 rda eng 620.11028499999998 Lebedev, A. A. verfasserin aut Radiation effects in silicon carbide by A. A. Lebedev. Millersville, Pennsylvania Materials Research Forum 2017 1 online resource (172 pages) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Materials Research Foundations v.6 Materials Research Foundations Ser. v.6 Description based upon print version of record The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Materials science--Data processing Materials science ; Data processing Materials science Data processing Electronic books Electronic books 9781945291104 Druck-Ausgabe Erscheint auch als 9781945291104 http://gbv.eblib.com/patron/FullRecord.aspx?p=4746649 Verlag Volltext https://ebookcentral.proquest.com/lib/kxp/detail.action?docID=4746649 X:EBC Verlag lizenzpflichtig Volltext ZDB-30-PAD ZDB-30-PQE GBV_ILN_370 ISIL_DE-1373 SYSFLAG_1 GBV_KXP GBV_ILN_2021 ISIL_DE-289 GBV_ILN_2148 ISIL_DE-950 BO 045F 620.11028499999998 370 01 4370 3976598275 olr-dda ebc Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots. i z 09-09-21 2021 01 DE-289 3845460342 00 --%%-- --%%-- --%%-- n l01 30-01-21 2148 01 DE-950 4207977414 00 --%%-- eBook ProQuest --%%-- n PDA-Angebot - nur für Hochschulangehörige der HfWU l01 09-11-22 370 01 4370 E-Book: Zugriff im HCU-Netz. Zugriff von auβerhalb nur für HCU-Angehörige möglich https://ebookcentral.proquest.com/lib/hcuhamburg-ebooks/detail.action?docID=4746649 2021 01 DE-289 https://ebookcentral.proquest.com/lib/kiz-uniulm/detail.action?docID=4746649 2148 01 DE-950 https://ebookcentral.proquest.com/lib/hfwu/detail.action?docID=4746649 370 01 4370 olr-dda ebc
allfields_unstemmed	ebook 9781945291111 : 90.91 (NL),136.36 (UA),113.64 (3U),90.91 (1U) 978-1-945291-11-1 (DE-627)873409752 (DE-576)500503702 (DE-599)GBV873409752 (OCoLC)1030346921 (EBP)012903272 (EBL)4746649 (EBR)11300732 (EBC)EBC4746649 DE-627 ger DE-627 rda eng 620.11028499999998 Lebedev, A. A. verfasserin aut Radiation effects in silicon carbide by A. A. Lebedev. Millersville, Pennsylvania Materials Research Forum 2017 1 online resource (172 pages) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Materials Research Foundations v.6 Materials Research Foundations Ser. v.6 Description based upon print version of record The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Materials science--Data processing Materials science ; Data processing Materials science Data processing Electronic books Electronic books 9781945291104 Druck-Ausgabe Erscheint auch als 9781945291104 http://gbv.eblib.com/patron/FullRecord.aspx?p=4746649 Verlag Volltext https://ebookcentral.proquest.com/lib/kxp/detail.action?docID=4746649 X:EBC Verlag lizenzpflichtig Volltext ZDB-30-PAD ZDB-30-PQE GBV_ILN_370 ISIL_DE-1373 SYSFLAG_1 GBV_KXP GBV_ILN_2021 ISIL_DE-289 GBV_ILN_2148 ISIL_DE-950 BO 045F 620.11028499999998 370 01 4370 3976598275 olr-dda ebc Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots. i z 09-09-21 2021 01 DE-289 3845460342 00 --%%-- --%%-- --%%-- n l01 30-01-21 2148 01 DE-950 4207977414 00 --%%-- eBook ProQuest --%%-- n PDA-Angebot - nur für Hochschulangehörige der HfWU l01 09-11-22 370 01 4370 E-Book: Zugriff im HCU-Netz. Zugriff von auβerhalb nur für HCU-Angehörige möglich https://ebookcentral.proquest.com/lib/hcuhamburg-ebooks/detail.action?docID=4746649 2021 01 DE-289 https://ebookcentral.proquest.com/lib/kiz-uniulm/detail.action?docID=4746649 2148 01 DE-950 https://ebookcentral.proquest.com/lib/hfwu/detail.action?docID=4746649 370 01 4370 olr-dda ebc
allfieldsGer	ebook 9781945291111 : 90.91 (NL),136.36 (UA),113.64 (3U),90.91 (1U) 978-1-945291-11-1 (DE-627)873409752 (DE-576)500503702 (DE-599)GBV873409752 (OCoLC)1030346921 (EBP)012903272 (EBL)4746649 (EBR)11300732 (EBC)EBC4746649 DE-627 ger DE-627 rda eng 620.11028499999998 Lebedev, A. A. verfasserin aut Radiation effects in silicon carbide by A. A. Lebedev. Millersville, Pennsylvania Materials Research Forum 2017 1 online resource (172 pages) Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Materials Research Foundations v.6 Materials Research Foundations Ser. v.6 Description based upon print version of record The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Materials science--Data processing Materials science ; Data processing Materials science Data processing Electronic books Electronic books 9781945291104 Druck-Ausgabe Erscheint auch als 9781945291104 http://gbv.eblib.com/patron/FullRecord.aspx?p=4746649 Verlag Volltext https://ebookcentral.proquest.com/lib/kxp/detail.action?docID=4746649 X:EBC Verlag lizenzpflichtig Volltext ZDB-30-PAD ZDB-30-PQE GBV_ILN_370 ISIL_DE-1373 SYSFLAG_1 GBV_KXP GBV_ILN_2021 ISIL_DE-289 GBV_ILN_2148 ISIL_DE-950 BO 045F 620.11028499999998 370 01 4370 3976598275 olr-dda ebc Vervielfältigungen (z.B. Kopien, Downloads) sind nur von einzelnen Kapiteln oder Seiten und nur zum eigenen wissenschaftlichen Gebrauch erlaubt. Keine Weitergabe an Dritte. Kein systematisches Downloaden durch Robots. i z 09-09-21 2021 01 DE-289 3845460342 00 --%%-- --%%-- --%%-- n l01 30-01-21 2148 01 DE-950 4207977414 00 --%%-- eBook ProQuest --%%-- n PDA-Angebot - nur für Hochschulangehörige der HfWU l01 09-11-22 370 01 4370 E-Book: Zugriff im HCU-Netz. Zugriff von auβerhalb nur für HCU-Angehörige möglich https://ebookcentral.proquest.com/lib/hcuhamburg-ebooks/detail.action?docID=4746649 2021 01 DE-289 https://ebookcentral.proquest.com/lib/kiz-uniulm/detail.action?docID=4746649 2148 01 DE-950 https://ebookcentral.proquest.com/lib/hfwu/detail.action?docID=4746649 370 01 4370 olr-dda ebc
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topic_title	620.11028499999998 Radiation effects in silicon carbide by A. A. Lebedev Materials science--Data processing Materials science ; Data processing Materials science Data processing Electronic books
publisher	Materials Research Forum
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title	Radiation effects in silicon carbide
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title_full	Radiation effects in silicon carbide by A. A. Lebedev
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title_sort	radiation effects in silicon carbide
title_auth	Radiation effects in silicon carbide
abstract	The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Description based upon print version of record
abstractGer	The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Description based upon print version of record
abstract_unstemmed	The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed frontpages -- 1 -- 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis -- 1.2 Polytypism in silicon carbide -- 1.3 SiC parameters important for electronics -- References -- 2 -- 2.1 Threshold energy of defect formation. -- 2.2 Temperature dependence of the carrier removal rate -- 2.3 Dependence of ηe on the measurement procedure -- 2.4 Experimental data obtained in determining the value of ηe -- 2.5 Compensation mechanism in SiC -- 2.5.1 Model -- 2.5.2 Comparison with experiment -- 2.6 Radiation doping 2.7 Effect of high irradiation doses -- 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons -- 2.8.1 Introduction -- 2.8.2 Generation of primary radiation defects under electron irradiation -- 2.8.3 Formation of secondary radiation defects -- 2.8.4 Comparison with experiment -- Conclusion -- References -- 3 -- 3.1 Introduction -- 3.2 Intrinsic defects in silicon carbide -- 3.2.1 Centers in the lower half of the energy gap -- 3.2.2 Defects in the upper half of the energy gap 3.3 Radiation doping of SiC -- 3.3.1 Electrons -- 3.3.2 Neutrons -- 3.3.3 Alpha - particles -- 3.3.4 Protons -- 3.3.5 Ion implantation -- 3.5 Radiation - stimulated photoluminescence in SiC -- 3.5.1 "Defect" photoluminescence -- 3.5.2 Restorian of SiC characteristics upon annealing -- References -- 4 -- 4.1 Change in parameters of SiC devices under irradiation -- 4.1.1 Schottky diodes -- 4.1.2 PN diodes -- 4.1.3 SiC field - effect transistors -- 4.2 Possible transformation of the SiC polytype under irradiation -- 4.2.1 Possible resons for the polytypism of SiC 4.2.2 Selected experimental results -- 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide -- 4.3.1 Dependence of the radiation hardness on the functional purpose of a device -- 4.3.2 Effect of temperature on the radiation hardness -- 4.4 Conclusion -- 4.5 Acknowledgments -- References -- keywords_editors Description based upon print version of record
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title_short	Radiation effects in silicon carbide
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