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Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf

The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TC...
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