Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite

A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-...
Ausführliche Beschreibung

A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Ausführliche Beschreibung