Zn-doped CdS/CdSe as efficient strategy to enhance the photovoltaic performance of quantum dot sensitized solar cells

• A transition metal Zn-doped CdS/CdSe QDSSCs are performed by SILAR. • The narrowed band gap caused the strong light absorbance. • The high concentration carriers promoted the shift of Fermi level towards the CB. • Zn-doping contributes to attenuation of the interfacial charge recombination rate an...
Ausführliche Beschreibung

• A transition metal Zn-doped CdS/CdSe QDSSCs are performed by SILAR. • The narrowed band gap caused the strong light absorbance. • The high concentration carriers promoted the shift of Fermi level towards the CB. • Zn-doping contributes to attenuation of the interfacial charge recombination rate and prolongs the electron lifetime. Ausführliche Beschreibung