Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTe

Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the tec...
Ausführliche Beschreibung

Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the technique of molecular beam epitaxy. Hg"1"-"xCd"xTe layers were grown by several liquid and vapor phase techniques. CdTe and Zn"xCd"1"-"xTe layers were single phase and did not contain the low angle grains commonly observed in bulk wafers. Compositional transition regions at the interfaces between layers grown by molecular beam epitaxy and their substrates were abrupt. Ausführliche Beschreibung