Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies

The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion o...
Ausführliche Beschreibung

The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Ausführliche Beschreibung