Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility

The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discus...
Ausführliche Beschreibung

The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Ausführliche Beschreibung