Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n+-CdS injection photodiode

Abstract We have studied the effect of ultrasonic processing on the electrical and photoelectric properties of a p-Si/n-CdS/n+-CdS injection photodiode. The results demonstrate that ultrasonic processing of such photodiodes reduces the density of surface states at the interface of their heterojuncti...
Ausführliche Beschreibung

Abstract We have studied the effect of ultrasonic processing on the electrical and photoelectric properties of a p-Si/n-CdS/n+-CdS injection photodiode. The results demonstrate that ultrasonic processing of such photodiodes reduces the density of surface states at the interface of their heterojunction as a result of defect annealing. This increases the spectral and integrated sensitivities of the photodiodes. Ausführliche Beschreibung