Influence of the composition on the electrical properties of amorphous chalcogenides $ AgGe_{1 + x} %$ As_{1 − x} %$ S_{3} $

Abstract This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides $ AgGe_{1 + x} %$ As_{1 − x} %$ S_{3} $ (x = 0.1, 0.4–0.6, 0.9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an incr...
Ausführliche Beschreibung

Abstract This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides $ AgGe_{1 + x} %$ As_{1 − x} %$ S_{3} $ (x = 0.1, 0.4–0.6, 0.9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an increase in the fraction of the ionic transfer, a decrease in the temperatures of its emergence, and an increase in conductivity). The synthesized compounds are electron-ion conductors. An increase in the Ge fraction leads to an increase in the temperature corresponding to the onset of ionic transport and to a decrease in conductivity. Ausführliche Beschreibung