Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers

Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides wit...
Ausführliche Beschreibung

Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Ausführliche Beschreibung