Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures

Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small an...
Ausführliche Beschreibung

Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternative inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale production of HgCdTe detectors. Growth of HgCdTe on these alternative substrates has its own difficulty, namely a large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In the work described herein, HgCdTe-on-Si diodes have been produced with R0A0 of over 400 Ω $ cm^{2} $ at 78 K and cutoff of 10.1 μm. Further, these diodes have good uniformity at 78 K at both 9.3 μm and 10.14 μm. Ausführliche Beschreibung