A Method for Copper Direct Bonding Reduced by Ethylene Glycol

Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bond...
Ausführliche Beschreibung

Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Ausführliche Beschreibung