InP and InGaAsP Semiconducting Materials for Optical Communications

Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-...
Ausführliche Beschreibung

Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Ausführliche Beschreibung