Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide

Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic se...
Ausführliche Beschreibung

Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Ausführliche Beschreibung