Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators

Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H...
Ausführliche Beschreibung

Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ausführliche Beschreibung