2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2...
Ausführliche Beschreibung

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. Ausführliche Beschreibung