Suchergebnisse - "Nenyei, Z."

1

Defect-Guarded Rapid Thermal Processing

von: Nényei, Z.

1993, in: Journal of the Electrochemical Society

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2

Eine einfache Präparationsmethode dünner Schichten auf Silizium-Substrat für die elektronenmikroskopische Untersuchung / A Simple Preparation Method for the Electron Microscopic Investigation of Thin Coatings on Silicon Substrate

von: Nényei, Z.

1984, in: Practical metallography

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3

Gas Flow Engineering in Rapid Thermal Processing

von: Nényei, Z.

1994, in: MRS online proceedings library

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4

Uniform Durable Thin Dielectrics Prepared by Rapid Thermal Processing in an N2O Ambient

von: Bienek, R.

1993, in: IEEE transactions on electron devices

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5

THERMAL PROCESSING - Device scaling drives pattern effect solutions - Hot shielding is a potential solution that addresses the growing concern with process nonuniformity and defect generation arising from pattern effects in thermal processing.

von: Timans, P.J.

2002, in: Solid state technology

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6

Pattern Related Non-Uniformities During Rapid Thermal Processing

von: Bremensdorfer, R.

1996, in: MRS online proceedings library

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7

Non-destructive probing of interfacial oxidation and nitridation states at RTP Si-oxides

von: Hoffmann, P.

2003, in: Thin solid films

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8

Controlled thermal kinetics in RTP

von: Niess, J.

1998, in: Journal of electronic materials

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9

Growth model for thin oxides and oxide optimization

von: Ludsteck, A.

2004, in: Journal of applied physics

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10

Homogeneity of Wet Oxidation by RTP

von: Glück, M.

1994, in: MRS online proceedings library

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11

RAPID COMMUNICATION: Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

von: Lerch, W.

2009, in: Semiconductor science and technology

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12

Semiconductor Devices, Materials, and Processing - Optimization of Thin, Nitrogen-Rich Silicon Oxynitrides Grown by Rapid Thermal Nitridation

von: Ludsteck, A.

2005, in: Journal of the Electrochemical Society

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13

NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

von: Chung, H.Y.A.

2005, in: Materials science and engineering / B

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14

Comparative study of low temperature poly-Si TFTs obtained by various crystallization techniques for use in active matrix LCDs

von: Pattyn, H.

1992, in: Microelectronic Engineering

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15

Special Session III - Electronic Materials - Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

von: Pichler, P.

2006, in: Diffusion and defect data / A

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