Suchergebnisse - "Uznanski, S"

1

Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops

von: Uznanski, S

2011, in: IEEE transactions on nuclear science

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2

Single Event Upset and Multiple Cell UpsetModeling in Commercial Bulk 65-nmCMOS SRAMs and Flip-Flops

von: Uznanski, S

2010, in: IEEE transactions on nuclear science

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3

Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

von: Uznanski, S

2011, in: IEEE transactions on nuclear science

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4

Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

von: Uznanski, S

2010, in: IEEE transactions on nuclear science

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5

Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM

von: Martinie, S

2012, in: IEEE transactions on nuclear science

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6

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

von: Serre, S

2012, in: IEEE transactions on nuclear science

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7

SESSION I: TECHNOLOGY AND DESIGN HARDENING A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling

von: Roche, P

2010, in: IEEE transactions on nuclear science

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8

SESSION I: GROUND LEVEL EFFECTS - Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

von: Martinie, S

2011, in: IEEE transactions on nuclear science

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9

SEE Measurements and Simulations Using Mono-Energetic GeV-Energy Hadron Beams

von: García Alía, R

2013, in: IEEE transactions on nuclear science

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10

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

von: Autran, J.L.

2010, in: Microelectronics reliability

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