Suchergebnisse - "Xian, Yulun"

1

Effects of growth pressure on the properties of p-GaN layers

von: Xian, Yulun

2011, in: Journal of crystal growth

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2

Cation sites modification enhanced luminescence and thermal quenching characteristic in the blue light-emitting Na3Sc2-xZnx(PO4)3:0.03Eu2+ phosphors

von: Xian, Yulun

2020transfer abstract, in: New ablation evolution behaviors in micro-hole drilling of 2.5D C

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3

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

von: Huang, Shanjin

2011, in: Journal of crystal growth

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4

Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

von: Huang, Shanjin

2011, in: Journal of applied physics

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5

Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

von: Huang, Shanjin

2012, in: Applied physics letters

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6

072101 Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes (6 pages)

von: Zheng, Zhiyuan

2012, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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7

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

von: Zheng, Zhiyuan

2011, in: Applied physics letters

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8

Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

von: Zheng, Zhiyuan

2012, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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9

Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

von: Zheng, Zhiyuan

2014, in: Journal of crystal growth

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10

Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

von: Zheng, Zhiyuan

2014transfer abstract, in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting

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11

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

von: Zheng, Zhiyuan

2012, in: Applied physics letters

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12

High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

von: Luo, Ruihong

2011, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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13

Semiconductors, dielectrics, and organic materials - 121001 High Quality GaN Grown on Si(111) Using Fast Coalescence Growth (3 pages)

von: Luo, Ruihong

2011, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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14

Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate

von: Luo, Ruihong

2011, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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15

Crystal growth, surfaces, interfaces, thin films, and bulk materials - 105501 Influence of V/III Ratio of Low Temperature Grown AIN Interlayer on the Growth of GaN on Si(111) Substrate (4 pages)

von: Luo, Ruihong

2011, in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers

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