Below gap photoreflectance of semi-insulating GaAs

Gespeichert in:

Autor*in:	Röppischer, Herbert [verfasserIn] Stein, Norbert [verfasserIn] Behn, Udo - 1957- [verfasserIn] Novikov, A. B. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1994

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : American Inst. of Physics, 1931, 76(1994), 7, Seite 4340-4343
Übergeordnetes Werk:	volume:76 ; year:1994 ; number:7 ; pages:4340-4343

Links:	Volltext

DOI / URN:	10.1063/1.357320

Katalog-ID:	1003380948

Internformat


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912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_72
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_121
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_374
912			\|a GBV_ILN_381
912			\|a GBV_ILN_602
912			\|a GBV_ILN_647
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2814
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4116
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4155
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4346
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
912			\|a GBV_ILN_4753
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Indexfelder

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matchkey_str	article:10897550:1994----::eogphtrfetnefein
hierarchy_sort_str	1994
publishDate	1994
allfields	10.1063/1.357320 doi (DE-627)1003380948 (DE-599)GBV1003380948 DE-627 ger DE-627 rda eng Röppischer, Herbert verfasserin aut Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Stein, Norbert verfasserin aut Behn, Udo 1957- verfasserin (DE-588)139152458 (DE-627)608374148 (DE-576)310461537 aut Novikov, A. B. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 76(1994), 7, Seite 4340-4343 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:76 year:1994 number:7 pages:4340-4343 https://doi.org/10.1063/1.357320 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 76 1994 7 4340-4343 32 01 3400 1721753311 x 08-11-17 32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
spelling	10.1063/1.357320 doi (DE-627)1003380948 (DE-599)GBV1003380948 DE-627 ger DE-627 rda eng Röppischer, Herbert verfasserin aut Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Stein, Norbert verfasserin aut Behn, Udo 1957- verfasserin (DE-588)139152458 (DE-627)608374148 (DE-576)310461537 aut Novikov, A. B. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 76(1994), 7, Seite 4340-4343 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:76 year:1994 number:7 pages:4340-4343 https://doi.org/10.1063/1.357320 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 76 1994 7 4340-4343 32 01 3400 1721753311 x 08-11-17 32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfields_unstemmed	10.1063/1.357320 doi (DE-627)1003380948 (DE-599)GBV1003380948 DE-627 ger DE-627 rda eng Röppischer, Herbert verfasserin aut Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Stein, Norbert verfasserin aut Behn, Udo 1957- verfasserin (DE-588)139152458 (DE-627)608374148 (DE-576)310461537 aut Novikov, A. B. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 76(1994), 7, Seite 4340-4343 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:76 year:1994 number:7 pages:4340-4343 https://doi.org/10.1063/1.357320 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 76 1994 7 4340-4343 32 01 3400 1721753311 x 08-11-17 32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfieldsGer	10.1063/1.357320 doi (DE-627)1003380948 (DE-599)GBV1003380948 DE-627 ger DE-627 rda eng Röppischer, Herbert verfasserin aut Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Stein, Norbert verfasserin aut Behn, Udo 1957- verfasserin (DE-588)139152458 (DE-627)608374148 (DE-576)310461537 aut Novikov, A. B. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 76(1994), 7, Seite 4340-4343 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:76 year:1994 number:7 pages:4340-4343 https://doi.org/10.1063/1.357320 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 76 1994 7 4340-4343 32 01 3400 1721753311 x 08-11-17 32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfieldsSound	10.1063/1.357320 doi (DE-627)1003380948 (DE-599)GBV1003380948 DE-627 ger DE-627 rda eng Röppischer, Herbert verfasserin aut Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Stein, Norbert verfasserin aut Behn, Udo 1957- verfasserin (DE-588)139152458 (DE-627)608374148 (DE-576)310461537 aut Novikov, A. B. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 76(1994), 7, Seite 4340-4343 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:76 year:1994 number:7 pages:4340-4343 https://doi.org/10.1063/1.357320 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 76 1994 7 4340-4343 32 01 3400 1721753311 x 08-11-17 32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
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author	Röppischer, Herbert
spellingShingle	Röppischer, Herbert 32 ilm <1994> 32 Fachgebiet Halbleiterphysik <Ilmenau> 32 Verfasser 32 Zeitschriftenaufsatz Below gap photoreflectance of semi-insulating GaAs
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topic_title	32 00 DE-Ilm1 00 ilm <1994> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov
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title	Below gap photoreflectance of semi-insulating GaAs
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title_full	Below gap photoreflectance of semi-insulating GaAs H. Röppischer, N. Stein, and U. Behn, A.B. Novikov
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title_auth	Below gap photoreflectance of semi-insulating GaAs
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title_short	Below gap photoreflectance of semi-insulating GaAs
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Below gap photoreflectance of semi-insulating GaAs

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