Modulation of excitonic reflectance at GaAs/GaAs interfaces

Gespeichert in:

Autor*in:	Novikov, A. B. [verfasserIn] Röppischer, Herbert [verfasserIn] Stein, Norbert [verfasserIn] Novikov, B. V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1995

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : American Inst. of Physics, 1931, 78(1995), 6, Seite 4011-4014
Übergeordnetes Werk:	volume:78 ; year:1995 ; number:6 ; pages:4011-4014

Links:	Volltext

DOI / URN:	10.1063/1.359923

Katalog-ID:	1003381626

Internformat


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008	171108s1995 xx \|\|\|\|\|o 00\| \|\|eng c
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041			\|a eng
100	1		\|a Novikov, A. B. \|e verfasserin \|4 aut
245	1	0	\|a Modulation of excitonic reflectance at GaAs/GaAs interfaces \|c A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov
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700	1		\|a Stein, Norbert \|e verfasserin \|4 aut
700	1		\|a Novikov, B. V. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Journal of applied physics \|d Melville, NY : American Inst. of Physics, 1931 \|g 78(1995), 6, Seite 4011-4014 \|h Online-Ressource \|w (DE-627)270127267 \|w (DE-600)1476463-5 \|w (DE-576)078188954 \|x 1089-7550 \|7 nnns
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912			\|a GBV_USEFLAG_U
912			\|a GBV_ILN_32
912			\|a ISIL_DE-Ilm1
912			\|a SYSFLAG_1
912			\|a GBV_KXP
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_72
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_121
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_374
912			\|a GBV_ILN_381
912			\|a GBV_ILN_602
912			\|a GBV_ILN_647
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2814
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4116
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4155
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4346
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
912			\|a GBV_ILN_4753
951			\|a AR
952			\|d 78 \|j 1995 \|e 6 \|h 4011-4014
980			\|2 32 \|1 01 \|x 3400 \|b 1721755039 \|y x \|z 08-11-17
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982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 01 \|0 (DE-627)520292510 \|a Fachgebiet Halbleiterphysik <Ilmenau>
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 02 \|0 (DE-627)476645433 \|a Verfasser
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 03 \|0 (DE-627)476643090 \|a Zeitschriftenaufsatz

Indexfelder

author_variant	a b n ab abn h r hr n s ns b v n bv bvn
matchkey_str	article:10897550:1995----::ouainfxioirfetnetas
hierarchy_sort_str	1995
publishDate	1995
allfields	10.1063/1.359923 doi (DE-627)1003381626 (DE-599)GBV1003381626 DE-627 ger DE-627 rda eng Novikov, A. B. verfasserin aut Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Röppischer, Herbert verfasserin aut Stein, Norbert verfasserin aut Novikov, B. V. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 78(1995), 6, Seite 4011-4014 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:78 year:1995 number:6 pages:4011-4014 https://doi.org/10.1063/1.359923 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 78 1995 6 4011-4014 32 01 3400 1721755039 x 08-11-17 32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
spelling	10.1063/1.359923 doi (DE-627)1003381626 (DE-599)GBV1003381626 DE-627 ger DE-627 rda eng Novikov, A. B. verfasserin aut Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Röppischer, Herbert verfasserin aut Stein, Norbert verfasserin aut Novikov, B. V. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 78(1995), 6, Seite 4011-4014 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:78 year:1995 number:6 pages:4011-4014 https://doi.org/10.1063/1.359923 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 78 1995 6 4011-4014 32 01 3400 1721755039 x 08-11-17 32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfields_unstemmed	10.1063/1.359923 doi (DE-627)1003381626 (DE-599)GBV1003381626 DE-627 ger DE-627 rda eng Novikov, A. B. verfasserin aut Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Röppischer, Herbert verfasserin aut Stein, Norbert verfasserin aut Novikov, B. V. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 78(1995), 6, Seite 4011-4014 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:78 year:1995 number:6 pages:4011-4014 https://doi.org/10.1063/1.359923 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 78 1995 6 4011-4014 32 01 3400 1721755039 x 08-11-17 32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfieldsGer	10.1063/1.359923 doi (DE-627)1003381626 (DE-599)GBV1003381626 DE-627 ger DE-627 rda eng Novikov, A. B. verfasserin aut Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Röppischer, Herbert verfasserin aut Stein, Norbert verfasserin aut Novikov, B. V. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 78(1995), 6, Seite 4011-4014 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:78 year:1995 number:6 pages:4011-4014 https://doi.org/10.1063/1.359923 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 78 1995 6 4011-4014 32 01 3400 1721755039 x 08-11-17 32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
allfieldsSound	10.1063/1.359923 doi (DE-627)1003381626 (DE-599)GBV1003381626 DE-627 ger DE-627 rda eng Novikov, A. B. verfasserin aut Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Röppischer, Herbert verfasserin aut Stein, Norbert verfasserin aut Novikov, B. V. verfasserin aut Enthalten in Journal of applied physics Melville, NY : American Inst. of Physics, 1931 78(1995), 6, Seite 4011-4014 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:78 year:1995 number:6 pages:4011-4014 https://doi.org/10.1063/1.359923 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_72 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4116 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 78 1995 6 4011-4014 32 01 3400 1721755039 x 08-11-17 32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz
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spellingShingle	Novikov, A. B. 32 ilm <1995> 32 Fachgebiet Halbleiterphysik <Ilmenau> 32 Verfasser 32 Zeitschriftenaufsatz Modulation of excitonic reflectance at GaAs/GaAs interfaces
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topic_title	32 00 DE-Ilm1 00 ilm <1995> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov
topic	32 ilm <1995> 32 Fachgebiet Halbleiterphysik <Ilmenau> 32 Verfasser 32 Zeitschriftenaufsatz
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title_full	Modulation of excitonic reflectance at GaAs/GaAs interfaces A.B. Novikov, H. Röppischer, N. Stein, and B.V. Novikov
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title_auth	Modulation of excitonic reflectance at GaAs/GaAs interfaces
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title_short	Modulation of excitonic reflectance at GaAs/GaAs interfaces
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Modulation of excitonic reflectance at GaAs/GaAs interfaces

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