Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

Gespeichert in:

Autor*in:	Berger, Christoph [verfasserIn] Dadgar, Armin [verfasserIn] Strittmatter, André [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Anmerkung:	DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023

Übergeordnetes Werk:	Enthalten in: Verhandlungen der Deutschen Physikalischen Gesellschaft - Deutsche Physikalische Gesellschaft, Bad Honnef : DPG, 1997, (2023), Artikel-ID HL 44.1
Übergeordnetes Werk:	year:2023 ; elocationid:HL 44.1

Links:	Link aufrufen

Katalog-ID:	1844450961

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spelling	(DE-627)1844450961 (DE-599)KXP1844450961 DE-627 ger DE-627 rda eng Berger, Christoph verfasserin aut Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023 Dadgar, Armin verfasserin aut Strittmatter, André verfasserin aut Enthalten in Deutsche Physikalische Gesellschaft Verhandlungen der Deutschen Physikalischen Gesellschaft Bad Honnef : DPG, 1997 (2023), Artikel-ID HL 44.1 (DE-627)56849136X (DE-600)2429341-6 (DE-576)281530637 nnns year:2023 elocationid:HL 44.1 https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_178 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_2403 GBV_ILN_2403 ISIL_DE-LFER AR 2023 HL 44.1 178 01 3178 4317528975 x 14-06-23 2403 01 DE-LFER 4324077681 00 --%%-- --%%-- n --%%-- l01 20-05-23 2403 01 DE-LFER https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 178 00 3178 00 (DE-627)1017736219 Institut für Physik <Magdeburg> 178 00 3178 02 Open Access 178 00 3178 02 (DE-627)719906873 Abstract 178 01 3178 99 j2023
allfields_unstemmed	(DE-627)1844450961 (DE-599)KXP1844450961 DE-627 ger DE-627 rda eng Berger, Christoph verfasserin aut Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023 Dadgar, Armin verfasserin aut Strittmatter, André verfasserin aut Enthalten in Deutsche Physikalische Gesellschaft Verhandlungen der Deutschen Physikalischen Gesellschaft Bad Honnef : DPG, 1997 (2023), Artikel-ID HL 44.1 (DE-627)56849136X (DE-600)2429341-6 (DE-576)281530637 nnns year:2023 elocationid:HL 44.1 https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_178 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_2403 GBV_ILN_2403 ISIL_DE-LFER AR 2023 HL 44.1 178 01 3178 4317528975 x 14-06-23 2403 01 DE-LFER 4324077681 00 --%%-- --%%-- n --%%-- l01 20-05-23 2403 01 DE-LFER https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 178 00 3178 00 (DE-627)1017736219 Institut für Physik <Magdeburg> 178 00 3178 02 Open Access 178 00 3178 02 (DE-627)719906873 Abstract 178 01 3178 99 j2023
allfieldsGer	(DE-627)1844450961 (DE-599)KXP1844450961 DE-627 ger DE-627 rda eng Berger, Christoph verfasserin aut Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023 Dadgar, Armin verfasserin aut Strittmatter, André verfasserin aut Enthalten in Deutsche Physikalische Gesellschaft Verhandlungen der Deutschen Physikalischen Gesellschaft Bad Honnef : DPG, 1997 (2023), Artikel-ID HL 44.1 (DE-627)56849136X (DE-600)2429341-6 (DE-576)281530637 nnns year:2023 elocationid:HL 44.1 https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_178 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_2403 GBV_ILN_2403 ISIL_DE-LFER AR 2023 HL 44.1 178 01 3178 4317528975 x 14-06-23 2403 01 DE-LFER 4324077681 00 --%%-- --%%-- n --%%-- l01 20-05-23 2403 01 DE-LFER https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 178 00 3178 00 (DE-627)1017736219 Institut für Physik <Magdeburg> 178 00 3178 02 Open Access 178 00 3178 02 (DE-627)719906873 Abstract 178 01 3178 99 j2023
allfieldsSound	(DE-627)1844450961 (DE-599)KXP1844450961 DE-627 ger DE-627 rda eng Berger, Christoph verfasserin aut Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023 Dadgar, Armin verfasserin aut Strittmatter, André verfasserin aut Enthalten in Deutsche Physikalische Gesellschaft Verhandlungen der Deutschen Physikalischen Gesellschaft Bad Honnef : DPG, 1997 (2023), Artikel-ID HL 44.1 (DE-627)56849136X (DE-600)2429341-6 (DE-576)281530637 nnns year:2023 elocationid:HL 44.1 https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_178 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_2403 GBV_ILN_2403 ISIL_DE-LFER AR 2023 HL 44.1 178 01 3178 4317528975 x 14-06-23 2403 01 DE-LFER 4324077681 00 --%%-- --%%-- n --%%-- l01 20-05-23 2403 01 DE-LFER https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1 178 00 3178 00 (DE-627)1017736219 Institut für Physik <Magdeburg> 178 00 3178 02 Open Access 178 00 3178 02 (DE-627)719906873 Abstract 178 01 3178 99 j2023
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title	Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
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title_full	Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
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title_sort	highly doped gan:ge/gan:mg tunnel junctions for novel gan-based optoelectronic devices
title_auth	Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
abstract	DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023
abstractGer	DPG-Frühjahrstagung der Sektion Kondensierte Materie, SKM, Dresden, 26. -31.03.2023
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title_short	Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
url	https://www.dpg-verhandlungen.de/year/2023/conference/skm/part/hl/session/44/contribution/1
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Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

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