Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs

Gespeichert in:

Autor*in:	Hoffmann, Felix [verfasserIn] Kaminski, Nando - 1968- [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Umfang:	Illustrationen

Übergeordnetes Werk:	Enthalten in: IET Power electronics - Institution of Engineering and Technology, London : IET, 2008, 12(2019), 15 vom: Dez., Seite 3903-3909
Übergeordnetes Werk:	volume:12 ; year:2019 ; number:15 ; month:12 ; pages:3903-3909

Links:	Link aufrufen

DOI / URN:	10.1049/iet-pel.2018.6369

Katalog-ID:	1882899261

Internformat


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912			\|a GBV_ILN_636
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912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
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912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
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912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
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publishDate	2019
allfields	10.1049/iet-pel.2018.6369 doi (DE-627)1882899261 (DE-599)KXP1882899261 DE-627 ger DE-627 rda eng Hoffmann, Felix verfasserin aut Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs Felix Hoffmann, Nando Kaminski 2019 Illustrationen Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kaminski, Nando 1968- verfasserin (DE-588)173464920 (DE-627)698378520 (DE-576)183848314 aut Enthalten in Institution of Engineering and Technology IET Power electronics London : IET, 2008 12(2019), 15 vom: Dez., Seite 3903-3909 Online-Ressource (DE-627)563167688 (DE-600)2421259-3 (DE-576)279449291 1755-4543 nnns volume:12 year:2019 number:15 month:12 pages:3903-3909 https://doi.org/10.1049/iet-pel.2018.6369 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_2403 ISIL_DE-LFER SYSFLAG_1 GBV_KXP GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 15 12 3903-3909 2403 01 DE-LFER 4509574916 00 --%%-- --%%-- n --%%-- l01 10-04-24 2403 01 DE-LFER https://doi.org/10.1049/iet-pel.2018.6369
spelling	10.1049/iet-pel.2018.6369 doi (DE-627)1882899261 (DE-599)KXP1882899261 DE-627 ger DE-627 rda eng Hoffmann, Felix verfasserin aut Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs Felix Hoffmann, Nando Kaminski 2019 Illustrationen Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kaminski, Nando 1968- verfasserin (DE-588)173464920 (DE-627)698378520 (DE-576)183848314 aut Enthalten in Institution of Engineering and Technology IET Power electronics London : IET, 2008 12(2019), 15 vom: Dez., Seite 3903-3909 Online-Ressource (DE-627)563167688 (DE-600)2421259-3 (DE-576)279449291 1755-4543 nnns volume:12 year:2019 number:15 month:12 pages:3903-3909 https://doi.org/10.1049/iet-pel.2018.6369 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_2403 ISIL_DE-LFER SYSFLAG_1 GBV_KXP GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 15 12 3903-3909 2403 01 DE-LFER 4509574916 00 --%%-- --%%-- n --%%-- l01 10-04-24 2403 01 DE-LFER https://doi.org/10.1049/iet-pel.2018.6369
allfields_unstemmed	10.1049/iet-pel.2018.6369 doi (DE-627)1882899261 (DE-599)KXP1882899261 DE-627 ger DE-627 rda eng Hoffmann, Felix verfasserin aut Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs Felix Hoffmann, Nando Kaminski 2019 Illustrationen Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kaminski, Nando 1968- verfasserin (DE-588)173464920 (DE-627)698378520 (DE-576)183848314 aut Enthalten in Institution of Engineering and Technology IET Power electronics London : IET, 2008 12(2019), 15 vom: Dez., Seite 3903-3909 Online-Ressource (DE-627)563167688 (DE-600)2421259-3 (DE-576)279449291 1755-4543 nnns volume:12 year:2019 number:15 month:12 pages:3903-3909 https://doi.org/10.1049/iet-pel.2018.6369 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_2403 ISIL_DE-LFER SYSFLAG_1 GBV_KXP GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 15 12 3903-3909 2403 01 DE-LFER 4509574916 00 --%%-- --%%-- n --%%-- l01 10-04-24 2403 01 DE-LFER https://doi.org/10.1049/iet-pel.2018.6369
allfieldsGer	10.1049/iet-pel.2018.6369 doi (DE-627)1882899261 (DE-599)KXP1882899261 DE-627 ger DE-627 rda eng Hoffmann, Felix verfasserin aut Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs Felix Hoffmann, Nando Kaminski 2019 Illustrationen Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kaminski, Nando 1968- verfasserin (DE-588)173464920 (DE-627)698378520 (DE-576)183848314 aut Enthalten in Institution of Engineering and Technology IET Power electronics London : IET, 2008 12(2019), 15 vom: Dez., Seite 3903-3909 Online-Ressource (DE-627)563167688 (DE-600)2421259-3 (DE-576)279449291 1755-4543 nnns volume:12 year:2019 number:15 month:12 pages:3903-3909 https://doi.org/10.1049/iet-pel.2018.6369 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_2403 ISIL_DE-LFER SYSFLAG_1 GBV_KXP GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 15 12 3903-3909 2403 01 DE-LFER 4509574916 00 --%%-- --%%-- n --%%-- l01 10-04-24 2403 01 DE-LFER https://doi.org/10.1049/iet-pel.2018.6369
allfieldsSound	10.1049/iet-pel.2018.6369 doi (DE-627)1882899261 (DE-599)KXP1882899261 DE-627 ger DE-627 rda eng Hoffmann, Felix verfasserin aut Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs Felix Hoffmann, Nando Kaminski 2019 Illustrationen Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kaminski, Nando 1968- verfasserin (DE-588)173464920 (DE-627)698378520 (DE-576)183848314 aut Enthalten in Institution of Engineering and Technology IET Power electronics London : IET, 2008 12(2019), 15 vom: Dez., Seite 3903-3909 Online-Ressource (DE-627)563167688 (DE-600)2421259-3 (DE-576)279449291 1755-4543 nnns volume:12 year:2019 number:15 month:12 pages:3903-3909 https://doi.org/10.1049/iet-pel.2018.6369 Verlag kostenfrei GBV_USEFLAG_U GBV_ILN_2403 ISIL_DE-LFER SYSFLAG_1 GBV_KXP GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 15 12 3903-3909 2403 01 DE-LFER 4509574916 00 --%%-- --%%-- n --%%-- l01 10-04-24 2403 01 DE-LFER https://doi.org/10.1049/iet-pel.2018.6369
language	English
source	Enthalten in IET Power electronics 12(2019), 15 vom: Dez., Seite 3903-3909 volume:12 year:2019 number:15 month:12 pages:3903-3909
sourceStr	Enthalten in IET Power electronics 12(2019), 15 vom: Dez., Seite 3903-3909 volume:12 year:2019 number:15 month:12 pages:3903-3909
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container_title	IET Power electronics
authorswithroles_txt_mv	Hoffmann, Felix @@aut@@ Kaminski, Nando @@aut@@
publishDateDaySort_date	2019-12-01T00:00:00Z
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Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs

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