Electrical transport between delta layers in silicon

Gespeichert in:

Autor*in:	Kiunke, Werner Hammerl, E. Eisele, Ignaz - 1943- Schulze, Dirk - 1960- Gobsch, Gerhard - 1947-

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1992

Übergeordnetes Werk:	In: Journal of applied physics - Melville, NY : American Inst. of Physics, 1931, 72(1992), 8, Seite 3602-3605
Übergeordnetes Werk:	volume:72 ; year:1992 ; number:8 ; pages:3602-3605

Links:	Volltext

DOI / URN:	10.1063/1.352300

Katalog-ID:	509314686

Internformat


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008	060322s1992 xx \|\|\|\|\|o 00\| \|\|eng c
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035			\|a (DE-627)509314686
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040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
245	1	0	\|a Electrical transport between delta layers in silicon \|c W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch
264		1	\|c 1992
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
700	1		\|a Kiunke, Werner \|4 oth
700	1		\|a Hammerl, E. \|4 oth
700	1		\|a Eisele, Ignaz \|d 1943- \|0 (DE-588)1088793509 \|0 (DE-627)850619599 \|0 (DE-576)45934742X \|4 oth
700	1		\|a Schulze, Dirk \|d 1960- \|0 (DE-588)136430279 \|0 (DE-627)582097169 \|0 (DE-576)301016046 \|4 oth
700	1		\|a Gobsch, Gerhard \|d 1947- \|0 (DE-588)133752550 \|0 (DE-627)555758117 \|0 (DE-576)300073674 \|4 oth
773	0	8	\|i In \|t Journal of applied physics \|d Melville, NY : American Inst. of Physics, 1931 \|g 72(1992), 8, Seite 3602-3605 \|h Online-Ressource \|w (DE-627)270127267 \|w (DE-600)1476463-5 \|w (DE-576)078188954 \|x 1089-7550 \|7 nnns
773	1	8	\|g volume:72 \|g year:1992 \|g number:8 \|g pages:3602-3605
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912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_121
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_374
912			\|a GBV_ILN_381
912			\|a GBV_ILN_602
912			\|a GBV_ILN_647
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2814
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4346
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
912			\|a GBV_ILN_4753
951			\|a AR
952			\|d 72 \|j 1992 \|e 8 \|h 3602-3605
980			\|2 32 \|1 01 \|x 3400 \|b 759394784 \|y x \|z 22-03-06
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 00 \|a ilm <1992>
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 01 \|0 (DE-627)520292510 \|a Fachgebiet Halbleiterphysik <Ilmenau>
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 02 \|0 (DE-627)476645433 \|a Verfasser
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 03 \|0 (DE-627)476643090 \|a Zeitschriftenaufsatz
982			\|2 32 \|1 00 \|x DE-Ilm1 \|8 04 \|0 (DE-627)480733066 \|a referiert

Indexfelder

matchkey_str	article:10897550:1992----::lcrclrnprbtenetl
hierarchy_sort_str	1992
publishDate	1992
allfields	10.1063/1.352300 doi (DE-627)509314686 (DE-599)GBV509314686 DE-627 ger DE-627 rakwb eng Electrical transport between delta layers in silicon W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kiunke, Werner oth Hammerl, E. oth Eisele, Ignaz 1943- (DE-588)1088793509 (DE-627)850619599 (DE-576)45934742X oth Schulze, Dirk 1960- (DE-588)136430279 (DE-627)582097169 (DE-576)301016046 oth Gobsch, Gerhard 1947- (DE-588)133752550 (DE-627)555758117 (DE-576)300073674 oth In Journal of applied physics Melville, NY : American Inst. of Physics, 1931 72(1992), 8, Seite 3602-3605 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:72 year:1992 number:8 pages:3602-3605 https://doi.org/10.1063/1.352300 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 72 1992 8 3602-3605 32 01 3400 759394784 x 22-03-06 32 00 DE-Ilm1 00 ilm <1992> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz 32 00 DE-Ilm1 04 (DE-627)480733066 referiert
spelling	10.1063/1.352300 doi (DE-627)509314686 (DE-599)GBV509314686 DE-627 ger DE-627 rakwb eng Electrical transport between delta layers in silicon W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kiunke, Werner oth Hammerl, E. oth Eisele, Ignaz 1943- (DE-588)1088793509 (DE-627)850619599 (DE-576)45934742X oth Schulze, Dirk 1960- (DE-588)136430279 (DE-627)582097169 (DE-576)301016046 oth Gobsch, Gerhard 1947- (DE-588)133752550 (DE-627)555758117 (DE-576)300073674 oth In Journal of applied physics Melville, NY : American Inst. of Physics, 1931 72(1992), 8, Seite 3602-3605 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:72 year:1992 number:8 pages:3602-3605 https://doi.org/10.1063/1.352300 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 72 1992 8 3602-3605 32 01 3400 759394784 x 22-03-06 32 00 DE-Ilm1 00 ilm <1992> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz 32 00 DE-Ilm1 04 (DE-627)480733066 referiert
allfields_unstemmed	10.1063/1.352300 doi (DE-627)509314686 (DE-599)GBV509314686 DE-627 ger DE-627 rakwb eng Electrical transport between delta layers in silicon W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kiunke, Werner oth Hammerl, E. oth Eisele, Ignaz 1943- (DE-588)1088793509 (DE-627)850619599 (DE-576)45934742X oth Schulze, Dirk 1960- (DE-588)136430279 (DE-627)582097169 (DE-576)301016046 oth Gobsch, Gerhard 1947- (DE-588)133752550 (DE-627)555758117 (DE-576)300073674 oth In Journal of applied physics Melville, NY : American Inst. of Physics, 1931 72(1992), 8, Seite 3602-3605 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:72 year:1992 number:8 pages:3602-3605 https://doi.org/10.1063/1.352300 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 72 1992 8 3602-3605 32 01 3400 759394784 x 22-03-06 32 00 DE-Ilm1 00 ilm <1992> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz 32 00 DE-Ilm1 04 (DE-627)480733066 referiert
allfieldsGer	10.1063/1.352300 doi (DE-627)509314686 (DE-599)GBV509314686 DE-627 ger DE-627 rakwb eng Electrical transport between delta layers in silicon W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kiunke, Werner oth Hammerl, E. oth Eisele, Ignaz 1943- (DE-588)1088793509 (DE-627)850619599 (DE-576)45934742X oth Schulze, Dirk 1960- (DE-588)136430279 (DE-627)582097169 (DE-576)301016046 oth Gobsch, Gerhard 1947- (DE-588)133752550 (DE-627)555758117 (DE-576)300073674 oth In Journal of applied physics Melville, NY : American Inst. of Physics, 1931 72(1992), 8, Seite 3602-3605 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:72 year:1992 number:8 pages:3602-3605 https://doi.org/10.1063/1.352300 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 72 1992 8 3602-3605 32 01 3400 759394784 x 22-03-06 32 00 DE-Ilm1 00 ilm <1992> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz 32 00 DE-Ilm1 04 (DE-627)480733066 referiert
allfieldsSound	10.1063/1.352300 doi (DE-627)509314686 (DE-599)GBV509314686 DE-627 ger DE-627 rakwb eng Electrical transport between delta layers in silicon W. Kiunke; E. Hammerl; I. Eisele; D. Schulze and G. Gobsch 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Kiunke, Werner oth Hammerl, E. oth Eisele, Ignaz 1943- (DE-588)1088793509 (DE-627)850619599 (DE-576)45934742X oth Schulze, Dirk 1960- (DE-588)136430279 (DE-627)582097169 (DE-576)301016046 oth Gobsch, Gerhard 1947- (DE-588)133752550 (DE-627)555758117 (DE-576)300073674 oth In Journal of applied physics Melville, NY : American Inst. of Physics, 1931 72(1992), 8, Seite 3602-3605 Online-Ressource (DE-627)270127267 (DE-600)1476463-5 (DE-576)078188954 1089-7550 nnns volume:72 year:1992 number:8 pages:3602-3605 https://doi.org/10.1063/1.352300 Resolving-System Volltext GBV_USEFLAG_U GBV_ILN_32 ISIL_DE-Ilm1 SYSFLAG_1 GBV_KXP GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_381 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2814 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4700 GBV_ILN_4753 AR 72 1992 8 3602-3605 32 01 3400 759394784 x 22-03-06 32 00 DE-Ilm1 00 ilm <1992> 32 00 DE-Ilm1 01 (DE-627)520292510 Fachgebiet Halbleiterphysik <Ilmenau> 32 00 DE-Ilm1 02 (DE-627)476645433 Verfasser 32 00 DE-Ilm1 03 (DE-627)476643090 Zeitschriftenaufsatz 32 00 DE-Ilm1 04 (DE-627)480733066 referiert
language	English
source	In Journal of applied physics 72(1992), 8, Seite 3602-3605 volume:72 year:1992 number:8 pages:3602-3605
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container_title	Journal of applied physics
authorswithroles_txt_mv	Kiunke, Werner @@oth@@ Hammerl, E. @@oth@@ Eisele, Ignaz @@oth@@ Schulze, Dirk @@oth@@ Gobsch, Gerhard @@oth@@
publishDateDaySort_date	1992-01-01T00:00:00Z
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Electrical transport between delta layers in silicon

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