High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm C...
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Autor*in:	Martín Riverola [verfasserIn] Francesc Torres [verfasserIn] Arantxa Uranga [verfasserIn] Núria Barniol [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 9(2018), 11, p 579
Übergeordnetes Werk:	volume:9 ; year:2018 ; number:11, p 579

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi9110579

Katalog-ID:	DOAJ000860344

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allfields	10.3390/mi9110579 doi (DE-627)DOAJ000860344 (DE-599)DOAJ7a218878b7564d1b90c9853ffd502a92 DE-627 ger DE-627 rakwb eng TJ1-1570 Martín Riverola verfasserin aut High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery Francesc Torres verfasserin aut Arantxa Uranga verfasserin aut Núria Barniol verfasserin aut In Micromachines MDPI AG, 2010 9(2018), 11, p 579 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:9 year:2018 number:11, p 579 https://doi.org/10.3390/mi9110579 kostenfrei https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 kostenfrei https://www.mdpi.com/2072-666X/9/11/579 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2018 11, p 579
spelling	10.3390/mi9110579 doi (DE-627)DOAJ000860344 (DE-599)DOAJ7a218878b7564d1b90c9853ffd502a92 DE-627 ger DE-627 rakwb eng TJ1-1570 Martín Riverola verfasserin aut High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery Francesc Torres verfasserin aut Arantxa Uranga verfasserin aut Núria Barniol verfasserin aut In Micromachines MDPI AG, 2010 9(2018), 11, p 579 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:9 year:2018 number:11, p 579 https://doi.org/10.3390/mi9110579 kostenfrei https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 kostenfrei https://www.mdpi.com/2072-666X/9/11/579 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2018 11, p 579
allfields_unstemmed	10.3390/mi9110579 doi (DE-627)DOAJ000860344 (DE-599)DOAJ7a218878b7564d1b90c9853ffd502a92 DE-627 ger DE-627 rakwb eng TJ1-1570 Martín Riverola verfasserin aut High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery Francesc Torres verfasserin aut Arantxa Uranga verfasserin aut Núria Barniol verfasserin aut In Micromachines MDPI AG, 2010 9(2018), 11, p 579 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:9 year:2018 number:11, p 579 https://doi.org/10.3390/mi9110579 kostenfrei https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 kostenfrei https://www.mdpi.com/2072-666X/9/11/579 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2018 11, p 579
allfieldsGer	10.3390/mi9110579 doi (DE-627)DOAJ000860344 (DE-599)DOAJ7a218878b7564d1b90c9853ffd502a92 DE-627 ger DE-627 rakwb eng TJ1-1570 Martín Riverola verfasserin aut High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery Francesc Torres verfasserin aut Arantxa Uranga verfasserin aut Núria Barniol verfasserin aut In Micromachines MDPI AG, 2010 9(2018), 11, p 579 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:9 year:2018 number:11, p 579 https://doi.org/10.3390/mi9110579 kostenfrei https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 kostenfrei https://www.mdpi.com/2072-666X/9/11/579 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2018 11, p 579
allfieldsSound	10.3390/mi9110579 doi (DE-627)DOAJ000860344 (DE-599)DOAJ7a218878b7564d1b90c9853ffd502a92 DE-627 ger DE-627 rakwb eng TJ1-1570 Martín Riverola verfasserin aut High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery Francesc Torres verfasserin aut Arantxa Uranga verfasserin aut Núria Barniol verfasserin aut In Micromachines MDPI AG, 2010 9(2018), 11, p 579 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:9 year:2018 number:11, p 579 https://doi.org/10.3390/mi9110579 kostenfrei https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 kostenfrei https://www.mdpi.com/2072-666X/9/11/579 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2018 11, p 579
language	English
source	In Micromachines 9(2018), 11, p 579 volume:9 year:2018 number:11, p 579
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topic_facet	MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS Mechanical engineering and machinery
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authorswithroles_txt_mv	Martín Riverola @@aut@@ Francesc Torres @@aut@@ Arantxa Uranga @@aut@@ Núria Barniol @@aut@@
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callnumber-first	T - Technology
author	Martín Riverola
spellingShingle	Martín Riverola misc TJ1-1570 misc MEMS relays misc MEMS switches misc mechanical relays misc CMOS-MEMS misc MEMS misc Mechanical engineering and machinery High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
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topic_title	TJ1-1570 High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer MEMS relays MEMS switches mechanical relays CMOS-MEMS MEMS
topic	misc TJ1-1570 misc MEMS relays misc MEMS switches misc mechanical relays misc CMOS-MEMS misc MEMS misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc MEMS relays misc MEMS switches misc mechanical relays misc CMOS-MEMS misc MEMS misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc MEMS relays misc MEMS switches misc mechanical relays misc CMOS-MEMS misc MEMS misc Mechanical engineering and machinery
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title	High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
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title_sort	high performance seesaw torsional cmos-mems relay using tungsten via layer
callnumber	TJ1-1570
title_auth	High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
abstract	In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
abstractGer	In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
abstract_unstemmed	In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
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container_issue	11, p 579
title_short	High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
url	https://doi.org/10.3390/mi9110579 https://doaj.org/article/7a218878b7564d1b90c9853ffd502a92 https://www.mdpi.com/2072-666X/9/11/579 https://doaj.org/toc/2072-666X
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up_date	2024-07-03T16:56:38.897Z
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