Wideband terahertz absorber based on Mie resonance metasurface

Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different per...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Qingmin Wang [verfasserIn] Ruilin Zhou [verfasserIn] Xuying Wang [verfasserIn] Yunsheng Guo [verfasserIn] Yanan Hao [verfasserIn] Ming Lei [verfasserIn] Ke Bi [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 7(2017), 11, Seite 115310-115310-5
Übergeordnetes Werk:	volume:7 ; year:2017 ; number:11 ; pages:115310-115310-5

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.5000393

Katalog-ID:	DOAJ001761307

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520			\|a Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices.
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allfields	10.1063/1.5000393 doi (DE-627)DOAJ001761307 (DE-599)DOAJ8f41777f2e7f4369a58a5cea1f548979 DE-627 ger DE-627 rakwb eng QC1-999 Qingmin Wang verfasserin aut Wideband terahertz absorber based on Mie resonance metasurface 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices. Physics Ruilin Zhou verfasserin aut Xuying Wang verfasserin aut Yunsheng Guo verfasserin aut Yanan Hao verfasserin aut Ming Lei verfasserin aut Ke Bi verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 11, Seite 115310-115310-5 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:11 pages:115310-115310-5 https://doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/article/8f41777f2e7f4369a58a5cea1f548979 kostenfrei http://dx.doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 11 115310-115310-5
spelling	10.1063/1.5000393 doi (DE-627)DOAJ001761307 (DE-599)DOAJ8f41777f2e7f4369a58a5cea1f548979 DE-627 ger DE-627 rakwb eng QC1-999 Qingmin Wang verfasserin aut Wideband terahertz absorber based on Mie resonance metasurface 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices. Physics Ruilin Zhou verfasserin aut Xuying Wang verfasserin aut Yunsheng Guo verfasserin aut Yanan Hao verfasserin aut Ming Lei verfasserin aut Ke Bi verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 11, Seite 115310-115310-5 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:11 pages:115310-115310-5 https://doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/article/8f41777f2e7f4369a58a5cea1f548979 kostenfrei http://dx.doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 11 115310-115310-5
allfields_unstemmed	10.1063/1.5000393 doi (DE-627)DOAJ001761307 (DE-599)DOAJ8f41777f2e7f4369a58a5cea1f548979 DE-627 ger DE-627 rakwb eng QC1-999 Qingmin Wang verfasserin aut Wideband terahertz absorber based on Mie resonance metasurface 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices. Physics Ruilin Zhou verfasserin aut Xuying Wang verfasserin aut Yunsheng Guo verfasserin aut Yanan Hao verfasserin aut Ming Lei verfasserin aut Ke Bi verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 11, Seite 115310-115310-5 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:11 pages:115310-115310-5 https://doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/article/8f41777f2e7f4369a58a5cea1f548979 kostenfrei http://dx.doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 11 115310-115310-5
allfieldsGer	10.1063/1.5000393 doi (DE-627)DOAJ001761307 (DE-599)DOAJ8f41777f2e7f4369a58a5cea1f548979 DE-627 ger DE-627 rakwb eng QC1-999 Qingmin Wang verfasserin aut Wideband terahertz absorber based on Mie resonance metasurface 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices. Physics Ruilin Zhou verfasserin aut Xuying Wang verfasserin aut Yunsheng Guo verfasserin aut Yanan Hao verfasserin aut Ming Lei verfasserin aut Ke Bi verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 11, Seite 115310-115310-5 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:11 pages:115310-115310-5 https://doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/article/8f41777f2e7f4369a58a5cea1f548979 kostenfrei http://dx.doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 11 115310-115310-5
allfieldsSound	10.1063/1.5000393 doi (DE-627)DOAJ001761307 (DE-599)DOAJ8f41777f2e7f4369a58a5cea1f548979 DE-627 ger DE-627 rakwb eng QC1-999 Qingmin Wang verfasserin aut Wideband terahertz absorber based on Mie resonance metasurface 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices. Physics Ruilin Zhou verfasserin aut Xuying Wang verfasserin aut Yunsheng Guo verfasserin aut Yanan Hao verfasserin aut Ming Lei verfasserin aut Ke Bi verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 11, Seite 115310-115310-5 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:11 pages:115310-115310-5 https://doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/article/8f41777f2e7f4369a58a5cea1f548979 kostenfrei http://dx.doi.org/10.1063/1.5000393 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 11 115310-115310-5
language	English
source	In AIP Advances 7(2017), 11, Seite 115310-115310-5 volume:7 year:2017 number:11 pages:115310-115310-5
sourceStr	In AIP Advances 7(2017), 11, Seite 115310-115310-5 volume:7 year:2017 number:11 pages:115310-115310-5
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authorswithroles_txt_mv	Qingmin Wang @@aut@@ Ruilin Zhou @@aut@@ Xuying Wang @@aut@@ Yunsheng Guo @@aut@@ Yanan Hao @@aut@@ Ming Lei @@aut@@ Ke Bi @@aut@@
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callnumber-first	Q - Science
author	Qingmin Wang
spellingShingle	Qingmin Wang misc QC1-999 misc Physics Wideband terahertz absorber based on Mie resonance metasurface
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topic_title	QC1-999 Wideband terahertz absorber based on Mie resonance metasurface
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title	Wideband terahertz absorber based on Mie resonance metasurface
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title_sort	wideband terahertz absorber based on mie resonance metasurface
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title_auth	Wideband terahertz absorber based on Mie resonance metasurface
abstract	Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices.
abstractGer	Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices.
abstract_unstemmed	Terahertz absorber has attracted much attention. However, most of them have complex structures and narrow bandwidth. Here, a wideband terahertz metasurface absorber based on Mie resonance is demonstrated. The metasurface absorber is prepared by combining four dielectric resonators with different permittivity values into a single unit cell. The absorption of the wideband metasurface absorber goes beyond 80% from 8.37 to 8.60 THz, showing wideband absorption performance. In addition, the center frequency of the wideband metasurface absorber can be tuned by the size and permittivity of the dielectric resonators, which makes the proposed absorber suitable for applications in wideband terahertz devices.
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title_short	Wideband terahertz absorber based on Mie resonance metasurface
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Wideband terahertz absorber based on Mie resonance metasurface

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Zugang & Verfügbarkeit

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