Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Yong Du [verfasserIn] Zhenzhen Kong [verfasserIn] Muhammet S. Toprak [verfasserIn] Guilei Wang [verfasserIn] Yuanhao Miao [verfasserIn] Buqing Xu [verfasserIn] Jiahan Yu [verfasserIn] Ben Li [verfasserIn] Hongxiao Lin [verfasserIn] Jianghao Han [verfasserIn] Yan Dong [verfasserIn] Wenwu Wang [verfasserIn] Henry H. Radamson [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Ge optimization parameter threading dislocation strain RPCVD

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 11(2021), 4, p 928
Übergeordnetes Werk:	volume:11 ; year:2021 ; number:4, p 928

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano11040928

Katalog-ID:	DOAJ001811347

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allfields	10.3390/nano11040928 doi (DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b DE-627 ger DE-627 rakwb eng QD1-999 Yong Du verfasserin aut Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ge optimization parameter threading dislocation strain RPCVD Chemistry Zhenzhen Kong verfasserin aut Muhammet S. Toprak verfasserin aut Guilei Wang verfasserin aut Yuanhao Miao verfasserin aut Buqing Xu verfasserin aut Jiahan Yu verfasserin aut Ben Li verfasserin aut Hongxiao Lin verfasserin aut Jianghao Han verfasserin aut Yan Dong verfasserin aut Wenwu Wang verfasserin aut Henry H. Radamson verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 4, p 928 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:4, p 928 https://doi.org/10.3390/nano11040928 kostenfrei https://doaj.org/article/80be46692e314dad99e73fd49e1e579b kostenfrei https://www.mdpi.com/2079-4991/11/4/928 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 928
spelling	10.3390/nano11040928 doi (DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b DE-627 ger DE-627 rakwb eng QD1-999 Yong Du verfasserin aut Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ge optimization parameter threading dislocation strain RPCVD Chemistry Zhenzhen Kong verfasserin aut Muhammet S. Toprak verfasserin aut Guilei Wang verfasserin aut Yuanhao Miao verfasserin aut Buqing Xu verfasserin aut Jiahan Yu verfasserin aut Ben Li verfasserin aut Hongxiao Lin verfasserin aut Jianghao Han verfasserin aut Yan Dong verfasserin aut Wenwu Wang verfasserin aut Henry H. Radamson verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 4, p 928 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:4, p 928 https://doi.org/10.3390/nano11040928 kostenfrei https://doaj.org/article/80be46692e314dad99e73fd49e1e579b kostenfrei https://www.mdpi.com/2079-4991/11/4/928 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 928
allfields_unstemmed	10.3390/nano11040928 doi (DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b DE-627 ger DE-627 rakwb eng QD1-999 Yong Du verfasserin aut Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ge optimization parameter threading dislocation strain RPCVD Chemistry Zhenzhen Kong verfasserin aut Muhammet S. Toprak verfasserin aut Guilei Wang verfasserin aut Yuanhao Miao verfasserin aut Buqing Xu verfasserin aut Jiahan Yu verfasserin aut Ben Li verfasserin aut Hongxiao Lin verfasserin aut Jianghao Han verfasserin aut Yan Dong verfasserin aut Wenwu Wang verfasserin aut Henry H. Radamson verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 4, p 928 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:4, p 928 https://doi.org/10.3390/nano11040928 kostenfrei https://doaj.org/article/80be46692e314dad99e73fd49e1e579b kostenfrei https://www.mdpi.com/2079-4991/11/4/928 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 928
allfieldsGer	10.3390/nano11040928 doi (DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b DE-627 ger DE-627 rakwb eng QD1-999 Yong Du verfasserin aut Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ge optimization parameter threading dislocation strain RPCVD Chemistry Zhenzhen Kong verfasserin aut Muhammet S. Toprak verfasserin aut Guilei Wang verfasserin aut Yuanhao Miao verfasserin aut Buqing Xu verfasserin aut Jiahan Yu verfasserin aut Ben Li verfasserin aut Hongxiao Lin verfasserin aut Jianghao Han verfasserin aut Yan Dong verfasserin aut Wenwu Wang verfasserin aut Henry H. Radamson verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 4, p 928 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:4, p 928 https://doi.org/10.3390/nano11040928 kostenfrei https://doaj.org/article/80be46692e314dad99e73fd49e1e579b kostenfrei https://www.mdpi.com/2079-4991/11/4/928 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 928
allfieldsSound	10.3390/nano11040928 doi (DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b DE-627 ger DE-627 rakwb eng QD1-999 Yong Du verfasserin aut Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation. Ge optimization parameter threading dislocation strain RPCVD Chemistry Zhenzhen Kong verfasserin aut Muhammet S. Toprak verfasserin aut Guilei Wang verfasserin aut Yuanhao Miao verfasserin aut Buqing Xu verfasserin aut Jiahan Yu verfasserin aut Ben Li verfasserin aut Hongxiao Lin verfasserin aut Jianghao Han verfasserin aut Yan Dong verfasserin aut Wenwu Wang verfasserin aut Henry H. Radamson verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 4, p 928 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:4, p 928 https://doi.org/10.3390/nano11040928 kostenfrei https://doaj.org/article/80be46692e314dad99e73fd49e1e579b kostenfrei https://www.mdpi.com/2079-4991/11/4/928 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 928
language	English
source	In Nanomaterials 11(2021), 4, p 928 volume:11 year:2021 number:4, p 928
sourceStr	In Nanomaterials 11(2021), 4, p 928 volume:11 year:2021 number:4, p 928
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Ge optimization parameter threading dislocation strain RPCVD Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Yong Du @@aut@@ Zhenzhen Kong @@aut@@ Muhammet S. Toprak @@aut@@ Guilei Wang @@aut@@ Yuanhao Miao @@aut@@ Buqing Xu @@aut@@ Jiahan Yu @@aut@@ Ben Li @@aut@@ Hongxiao Lin @@aut@@ Jianghao Han @@aut@@ Yan Dong @@aut@@ Wenwu Wang @@aut@@ Henry H. Radamson @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ001811347
language_de	englisch
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Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. 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callnumber-first	Q - Science
author	Yong Du
spellingShingle	Yong Du misc QD1-999 misc Ge misc optimization misc parameter misc threading dislocation misc strain misc RPCVD misc Chemistry Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
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topic_title	QD1-999 Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD Ge optimization parameter threading dislocation strain RPCVD
topic	misc QD1-999 misc Ge misc optimization misc parameter misc threading dislocation misc strain misc RPCVD misc Chemistry
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title	Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
ctrlnum	(DE-627)DOAJ001811347 (DE-599)DOAJ80be46692e314dad99e73fd49e1e579b
title_full	Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
author_sort	Yong Du
journal	Nanomaterials
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author_browse	Yong Du Zhenzhen Kong Muhammet S. Toprak Guilei Wang Yuanhao Miao Buqing Xu Jiahan Yu Ben Li Hongxiao Lin Jianghao Han Yan Dong Wenwu Wang Henry H. Radamson
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doi_str_mv	10.3390/nano11040928
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title_sort	investigation of the heteroepitaxial process optimization of ge layers on si (001) by rpcvd
callnumber	QD1-999
title_auth	Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
abstract	This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.
abstractGer	This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.
abstract_unstemmed	This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 10<sup<7</sup< cm<sup<−2</sup<). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.
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container_issue	4, p 928
title_short	Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
url	https://doi.org/10.3390/nano11040928 https://doaj.org/article/80be46692e314dad99e73fd49e1e579b https://www.mdpi.com/2079-4991/11/4/928 https://doaj.org/toc/2079-4991
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author2	Zhenzhen Kong Muhammet S. Toprak Guilei Wang Yuanhao Miao Buqing Xu Jiahan Yu Ben Li Hongxiao Lin Jianghao Han Yan Dong Wenwu Wang Henry H. Radamson
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Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

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