Doping with Nb enhances the photoresponsivity of WSe2 thin sheets

In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped...
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Autor*in:	Der-Yuh Lin [verfasserIn] Jhih-Jhong Jheng [verfasserIn] Tsung-Shine Ko [verfasserIn] Hung-Pin Hsu [verfasserIn] Chia-Feng Lin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 8(2018), 5, Seite 055011-055011-6
Übergeordnetes Werk:	volume:8 ; year:2018 ; number:5 ; pages:055011-055011-6

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.5024570

Katalog-ID:	DOAJ002034719

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520			\|a In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.
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allfields	10.1063/1.5024570 doi (DE-627)DOAJ002034719 (DE-599)DOAJbfe5a5b27f794f488f726f4b224f693f DE-627 ger DE-627 rakwb eng QC1-999 Der-Yuh Lin verfasserin aut Doping with Nb enhances the photoresponsivity of WSe2 thin sheets 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors. Physics Jhih-Jhong Jheng verfasserin aut Tsung-Shine Ko verfasserin aut Hung-Pin Hsu verfasserin aut Chia-Feng Lin verfasserin aut In AIP Advances AIP Publishing LLC, 2011 8(2018), 5, Seite 055011-055011-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:8 year:2018 number:5 pages:055011-055011-6 https://doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f kostenfrei http://dx.doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 5 055011-055011-6
spelling	10.1063/1.5024570 doi (DE-627)DOAJ002034719 (DE-599)DOAJbfe5a5b27f794f488f726f4b224f693f DE-627 ger DE-627 rakwb eng QC1-999 Der-Yuh Lin verfasserin aut Doping with Nb enhances the photoresponsivity of WSe2 thin sheets 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors. Physics Jhih-Jhong Jheng verfasserin aut Tsung-Shine Ko verfasserin aut Hung-Pin Hsu verfasserin aut Chia-Feng Lin verfasserin aut In AIP Advances AIP Publishing LLC, 2011 8(2018), 5, Seite 055011-055011-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:8 year:2018 number:5 pages:055011-055011-6 https://doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f kostenfrei http://dx.doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 5 055011-055011-6
allfields_unstemmed	10.1063/1.5024570 doi (DE-627)DOAJ002034719 (DE-599)DOAJbfe5a5b27f794f488f726f4b224f693f DE-627 ger DE-627 rakwb eng QC1-999 Der-Yuh Lin verfasserin aut Doping with Nb enhances the photoresponsivity of WSe2 thin sheets 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors. Physics Jhih-Jhong Jheng verfasserin aut Tsung-Shine Ko verfasserin aut Hung-Pin Hsu verfasserin aut Chia-Feng Lin verfasserin aut In AIP Advances AIP Publishing LLC, 2011 8(2018), 5, Seite 055011-055011-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:8 year:2018 number:5 pages:055011-055011-6 https://doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f kostenfrei http://dx.doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 5 055011-055011-6
allfieldsGer	10.1063/1.5024570 doi (DE-627)DOAJ002034719 (DE-599)DOAJbfe5a5b27f794f488f726f4b224f693f DE-627 ger DE-627 rakwb eng QC1-999 Der-Yuh Lin verfasserin aut Doping with Nb enhances the photoresponsivity of WSe2 thin sheets 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors. Physics Jhih-Jhong Jheng verfasserin aut Tsung-Shine Ko verfasserin aut Hung-Pin Hsu verfasserin aut Chia-Feng Lin verfasserin aut In AIP Advances AIP Publishing LLC, 2011 8(2018), 5, Seite 055011-055011-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:8 year:2018 number:5 pages:055011-055011-6 https://doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f kostenfrei http://dx.doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 5 055011-055011-6
allfieldsSound	10.1063/1.5024570 doi (DE-627)DOAJ002034719 (DE-599)DOAJbfe5a5b27f794f488f726f4b224f693f DE-627 ger DE-627 rakwb eng QC1-999 Der-Yuh Lin verfasserin aut Doping with Nb enhances the photoresponsivity of WSe2 thin sheets 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors. Physics Jhih-Jhong Jheng verfasserin aut Tsung-Shine Ko verfasserin aut Hung-Pin Hsu verfasserin aut Chia-Feng Lin verfasserin aut In AIP Advances AIP Publishing LLC, 2011 8(2018), 5, Seite 055011-055011-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:8 year:2018 number:5 pages:055011-055011-6 https://doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f kostenfrei http://dx.doi.org/10.1063/1.5024570 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 5 055011-055011-6
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source	In AIP Advances 8(2018), 5, Seite 055011-055011-6 volume:8 year:2018 number:5 pages:055011-055011-6
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X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. 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author	Der-Yuh Lin
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topic_title	QC1-999 Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
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title	Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
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title_full	Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
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title_sort	doping with nb enhances the photoresponsivity of wse2 thin sheets
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title_auth	Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
abstract	In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.
abstractGer	In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.
abstract_unstemmed	In this study, we used chemical vapor transport to grow undoped and niobium (Nb)-doped tungsten diselenide (WSe2) thin sheets and then investigated the structural and photoelectronic characteristics of both samples. X-ray photoelectron spectroscopy confirmed the presence of Nb atoms in the Nb-doped WSe2 sample. Hall effect measurements of the transport behavior of the carriers in the undoped and Nb-doped WSe2 indicated that the Nb-doped WSe2 was of p-type and had a higher carrier concentration and lower mobility than the undoped WSe2. The current density–voltage characteristics indicated that doping with Nb led to a decrease in resistance. Photoconductivity measurements revealed that the responsivity of the Nb-doped WSe2 was an order of magnitude greater than that of the undoped WSe2. Thus, doping Nb atoms into WSe2 not only provides effective carriers but also enhances the photoresponsivity significantly. Accordingly, doping WSe2 with Nb atoms would appear to be useful for the fabrication of highly sensitive photodetectors.
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title_short	Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
url	https://doi.org/10.1063/1.5024570 https://doaj.org/article/bfe5a5b27f794f488f726f4b224f693f http://dx.doi.org/10.1063/1.5024570 https://doaj.org/toc/2158-3226
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Doping with Nb enhances the photoresponsivity of WSe2 thin sheets

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