Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping

This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant en...
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Autor*in:	Zhi-Hao Zhao [verfasserIn] Rui-Fang Ge [verfasserIn] Yejing Dai [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain

Übergeordnetes Werk:	In: Journal of Advanced Dielectrics - World Scientific Publishing, 2018, 9(2019), 3, Seite 1950022-1-1950022-7
Übergeordnetes Werk:	volume:9 ; year:2019 ; number:3 ; pages:1950022-1-1950022-7

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1142/S2010135X1950022X

Katalog-ID:	DOAJ00228006X

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ00228006X
003	DE-627
005	20230501173807.0
007	cr uuu---uuuuu
008	230225s2019 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1142/S2010135X1950022X \|2 doi
035			\|a (DE-627)DOAJ00228006X
035			\|a (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QC501-721
100	0		\|a Zhi-Hao Zhao \|e verfasserin \|4 aut
245	1	0	\|a Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
264		1	\|c 2019
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.
650		4	\|a Lead-free piezoelectric ceramics
650		4	\|a BNT-based
650		4	\|a CuO dopant
650		4	\|a electro-strain
653		0	\|a Electricity
700	0		\|a Rui-Fang Ge \|e verfasserin \|4 aut
700	0		\|a Yejing Dai \|e verfasserin \|4 aut
773	0	8	\|i In \|t Journal of Advanced Dielectrics \|d World Scientific Publishing, 2018 \|g 9(2019), 3, Seite 1950022-1-1950022-7 \|w (DE-627)778146960 \|w (DE-600)2756564-6 \|x 20101368 \|7 nnns
773	1	8	\|g volume:9 \|g year:2019 \|g number:3 \|g pages:1950022-1-1950022-7
856	4	0	\|u https://doi.org/10.1142/S2010135X1950022X \|z kostenfrei
856	4	0	\|u https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b \|z kostenfrei
856	4	0	\|u http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2010-135X \|y Journal toc \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2010-1368 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 9 \|j 2019 \|e 3 \|h 1950022-1-1950022-7

Indexfelder

author_variant	z h z zhz r f g rfg y d yd
matchkey_str	article:20101368:2019----::ageetotaninlfhbttnlafepeolcr
hierarchy_sort_str	2019
callnumber-subject-code	QC
publishDate	2019
allfields	10.1142/S2010135X1950022X doi (DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b DE-627 ger DE-627 rakwb eng QC501-721 Zhi-Hao Zhao verfasserin aut Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics. Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity Rui-Fang Ge verfasserin aut Yejing Dai verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 9(2019), 3, Seite 1950022-1-1950022-7 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:9 year:2019 number:3 pages:1950022-1-1950022-7 https://doi.org/10.1142/S2010135X1950022X kostenfrei https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 3 1950022-1-1950022-7
spelling	10.1142/S2010135X1950022X doi (DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b DE-627 ger DE-627 rakwb eng QC501-721 Zhi-Hao Zhao verfasserin aut Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics. Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity Rui-Fang Ge verfasserin aut Yejing Dai verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 9(2019), 3, Seite 1950022-1-1950022-7 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:9 year:2019 number:3 pages:1950022-1-1950022-7 https://doi.org/10.1142/S2010135X1950022X kostenfrei https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 3 1950022-1-1950022-7
allfields_unstemmed	10.1142/S2010135X1950022X doi (DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b DE-627 ger DE-627 rakwb eng QC501-721 Zhi-Hao Zhao verfasserin aut Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics. Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity Rui-Fang Ge verfasserin aut Yejing Dai verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 9(2019), 3, Seite 1950022-1-1950022-7 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:9 year:2019 number:3 pages:1950022-1-1950022-7 https://doi.org/10.1142/S2010135X1950022X kostenfrei https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 3 1950022-1-1950022-7
allfieldsGer	10.1142/S2010135X1950022X doi (DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b DE-627 ger DE-627 rakwb eng QC501-721 Zhi-Hao Zhao verfasserin aut Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics. Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity Rui-Fang Ge verfasserin aut Yejing Dai verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 9(2019), 3, Seite 1950022-1-1950022-7 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:9 year:2019 number:3 pages:1950022-1-1950022-7 https://doi.org/10.1142/S2010135X1950022X kostenfrei https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 3 1950022-1-1950022-7
allfieldsSound	10.1142/S2010135X1950022X doi (DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b DE-627 ger DE-627 rakwb eng QC501-721 Zhi-Hao Zhao verfasserin aut Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics. Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity Rui-Fang Ge verfasserin aut Yejing Dai verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 9(2019), 3, Seite 1950022-1-1950022-7 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:9 year:2019 number:3 pages:1950022-1-1950022-7 https://doi.org/10.1142/S2010135X1950022X kostenfrei https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 3 1950022-1-1950022-7
language	English
source	In Journal of Advanced Dielectrics 9(2019), 3, Seite 1950022-1-1950022-7 volume:9 year:2019 number:3 pages:1950022-1-1950022-7
sourceStr	In Journal of Advanced Dielectrics 9(2019), 3, Seite 1950022-1-1950022-7 volume:9 year:2019 number:3 pages:1950022-1-1950022-7
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain Electricity
isfreeaccess_bool	true
container_title	Journal of Advanced Dielectrics
authorswithroles_txt_mv	Zhi-Hao Zhao @@aut@@ Rui-Fang Ge @@aut@@ Yejing Dai @@aut@@
publishDateDaySort_date	2019-01-01T00:00:00Z
hierarchy_top_id	778146960
id	DOAJ00228006X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ00228006X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501173807.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/S2010135X1950022X</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ00228006X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC501-721</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Zhi-Hao Zhao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lead-free piezoelectric ceramics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BNT-based</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CuO dopant</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">electro-strain</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electricity</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Rui-Fang Ge</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yejing Dai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Journal of Advanced Dielectrics</subfield><subfield code="d">World Scientific Publishing, 2018</subfield><subfield code="g">9(2019), 3, Seite 1950022-1-1950022-7</subfield><subfield code="w">(DE-627)778146960</subfield><subfield code="w">(DE-600)2756564-6</subfield><subfield code="x">20101368</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:1950022-1-1950022-7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1142/S2010135X1950022X</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-135X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-1368</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">3</subfield><subfield code="h">1950022-1-1950022-7</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Zhi-Hao Zhao
spellingShingle	Zhi-Hao Zhao misc QC501-721 misc Lead-free piezoelectric ceramics misc BNT-based misc CuO dopant misc electro-strain misc Electricity Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
authorStr	Zhi-Hao Zhao
ppnlink_with_tag_str_mv	@@773@@(DE-627)778146960
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QC501-721
illustrated	Not Illustrated
issn	20101368
topic_title	QC501-721 Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping Lead-free piezoelectric ceramics BNT-based CuO dopant electro-strain
topic	misc QC501-721 misc Lead-free piezoelectric ceramics misc BNT-based misc CuO dopant misc electro-strain misc Electricity
topic_unstemmed	misc QC501-721 misc Lead-free piezoelectric ceramics misc BNT-based misc CuO dopant misc electro-strain misc Electricity
topic_browse	misc QC501-721 misc Lead-free piezoelectric ceramics misc BNT-based misc CuO dopant misc electro-strain misc Electricity
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Journal of Advanced Dielectrics
hierarchy_parent_id	778146960
hierarchy_top_title	Journal of Advanced Dielectrics
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)778146960 (DE-600)2756564-6
title	Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
ctrlnum	(DE-627)DOAJ00228006X (DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b
title_full	Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
author_sort	Zhi-Hao Zhao
journal	Journal of Advanced Dielectrics
journalStr	Journal of Advanced Dielectrics
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2019
contenttype_str_mv	txt
container_start_page	1950022
author_browse	Zhi-Hao Zhao Rui-Fang Ge Yejing Dai
container_volume	9
class	QC501-721
format_se	Elektronische Aufsätze
author-letter	Zhi-Hao Zhao
doi_str_mv	10.1142/S2010135X1950022X
author2-role	verfasserin
title_sort	large electro-strain signal of the bnt–bt–knn lead-free piezoelectric ceramics with cuo doping
callnumber	QC501-721
title_auth	Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
abstract	This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.
abstractGer	This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.
abstract_unstemmed	This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	3
title_short	Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping
url	https://doi.org/10.1142/S2010135X1950022X https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X https://doaj.org/toc/2010-135X https://doaj.org/toc/2010-1368
remote_bool	true
author2	Rui-Fang Ge Yejing Dai
author2Str	Rui-Fang Ge Yejing Dai
ppnlink	778146960
callnumber-subject	QC - Physics
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1142/S2010135X1950022X
callnumber-a	QC501-721
up_date	2024-07-04T00:36:23.773Z
_version_	1803606696946302976
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ00228006X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501173807.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/S2010135X1950022X</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ00228006X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ3f1b056d69604a1c91bb5dd35495833b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC501-721</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Zhi-Hao Zhao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper investigates a system of 0.93Bi0.5Na0.5TiO3–0.06BaTiO3–0.01K0.5Na0.5NbO3–xCuO (BNT–BT–KNN–xCuO, x=0−0.04mol.%) ceramics, which were fabricated by the conventional solid-state process through the granulation of vacuum freeze drier. The results show that the CuO doping made a significant enhancement on the piezoelectric properties of the BNT–BT–KNN ceramics. With the doping of CuO, the transition temperature between ferroelectric phase and ergodic relaxor state is reduced to near room temperature, resulting in pinched P–E loops and “sprout” shape S–E curves. For the composition with x=0.01, a high unipolar strain of 0.39% under 5kV/mm contributes a large d33∗∼780pm/V at room temperature, which is competitive with the other BNT-based ceramics.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lead-free piezoelectric ceramics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BNT-based</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CuO dopant</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">electro-strain</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electricity</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Rui-Fang Ge</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yejing Dai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Journal of Advanced Dielectrics</subfield><subfield code="d">World Scientific Publishing, 2018</subfield><subfield code="g">9(2019), 3, Seite 1950022-1-1950022-7</subfield><subfield code="w">(DE-627)778146960</subfield><subfield code="w">(DE-600)2756564-6</subfield><subfield code="x">20101368</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:1950022-1-1950022-7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1142/S2010135X1950022X</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/3f1b056d69604a1c91bb5dd35495833b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/doi/pdf/10.1142/S2010135X1950022X</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-135X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-1368</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">3</subfield><subfield code="h">1950022-1-1950022-7</subfield></datafield></record></collection>
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Large electro-strain signal of the BNT–BT–KNN lead-free piezoelectric ceramics with CuO doping

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