Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crys...
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Gespeichert in:

Autor*in:	Hong Wang [verfasserIn] Ming Zhong [verfasserIn] Lijun Tan [verfasserIn] Wei Shi [verfasserIn] Quanbin Zhou [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	visible light communication photonic crystals flip-chip led purcell effect light extraction efficiency

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 10(2019), 11, p 767
Übergeordnetes Werk:	volume:10 ; year:2019 ; number:11, p 767

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi10110767

Katalog-ID:	DOAJ002516217

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520			\|a In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
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allfieldsGer	10.3390/mi10110767 doi (DE-627)DOAJ002516217 (DE-599)DOAJ18772cfb68014fc4b86fbfdf856559a9 DE-627 ger DE-627 rakwb eng TJ1-1570 Hong Wang verfasserin aut Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication. visible light communication photonic crystals flip-chip led purcell effect light extraction efficiency Mechanical engineering and machinery Ming Zhong verfasserin aut Lijun Tan verfasserin aut Wei Shi verfasserin aut Quanbin Zhou verfasserin aut In Micromachines MDPI AG, 2010 10(2019), 11, p 767 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:10 year:2019 number:11, p 767 https://doi.org/10.3390/mi10110767 kostenfrei https://doaj.org/article/18772cfb68014fc4b86fbfdf856559a9 kostenfrei https://www.mdpi.com/2072-666X/10/11/767 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2019 11, p 767
allfieldsSound	10.3390/mi10110767 doi (DE-627)DOAJ002516217 (DE-599)DOAJ18772cfb68014fc4b86fbfdf856559a9 DE-627 ger DE-627 rakwb eng TJ1-1570 Hong Wang verfasserin aut Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication. visible light communication photonic crystals flip-chip led purcell effect light extraction efficiency Mechanical engineering and machinery Ming Zhong verfasserin aut Lijun Tan verfasserin aut Wei Shi verfasserin aut Quanbin Zhou verfasserin aut In Micromachines MDPI AG, 2010 10(2019), 11, p 767 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:10 year:2019 number:11, p 767 https://doi.org/10.3390/mi10110767 kostenfrei https://doaj.org/article/18772cfb68014fc4b86fbfdf856559a9 kostenfrei https://www.mdpi.com/2072-666X/10/11/767 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2019 11, p 767
language	English
source	In Micromachines 10(2019), 11, p 767 volume:10 year:2019 number:11, p 767
sourceStr	In Micromachines 10(2019), 11, p 767 volume:10 year:2019 number:11, p 767
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	visible light communication photonic crystals flip-chip led purcell effect light extraction efficiency Mechanical engineering and machinery
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container_title	Micromachines
authorswithroles_txt_mv	Hong Wang @@aut@@ Ming Zhong @@aut@@ Lijun Tan @@aut@@ Wei Shi @@aut@@ Quanbin Zhou @@aut@@
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callnumber-first	T - Technology
author	Hong Wang
spellingShingle	Hong Wang misc TJ1-1570 misc visible light communication misc photonic crystals misc flip-chip led misc purcell effect misc light extraction efficiency misc Mechanical engineering and machinery Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
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topic_title	TJ1-1570 Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals visible light communication photonic crystals flip-chip led purcell effect light extraction efficiency
topic	misc TJ1-1570 misc visible light communication misc photonic crystals misc flip-chip led misc purcell effect misc light extraction efficiency misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc visible light communication misc photonic crystals misc flip-chip led misc purcell effect misc light extraction efficiency misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc visible light communication misc photonic crystals misc flip-chip led misc purcell effect misc light extraction efficiency misc Mechanical engineering and machinery
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title	Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
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title_full	Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
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title_sort	study on modulation bandwidth and light extraction efficiency of flip-chip light-emitting diode with photonic crystals
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title_auth	Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
abstract	In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
abstractGer	In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
abstract_unstemmed	In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup<2</sup<. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup<2</sup< and up to 285 MHz at current densities of 2000 A/cm<sup<2</sup<. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
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title_short	Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
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