Efficiency enhancement of InGaN amber MQWs using nanopillar structures

We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extract...
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Gespeichert in:

Autor*in:	Ou Yiyu [verfasserIn] Iida Daisuke [verfasserIn] Liu Jin [verfasserIn] Wu Kaiyu [verfasserIn] Ohkawa Kazuhiro [verfasserIn] Boisen Anja [verfasserIn] Petersen Paul Michael [verfasserIn] Ou Haiyan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	ingan mqws nanopillar qcse strain relaxation light extraction

Übergeordnetes Werk:	In: Nanophotonics - De Gruyter, 2016, 7(2018), 1, Seite 317-322
Übergeordnetes Werk:	volume:7 ; year:2018 ; number:1 ; pages:317-322

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1515/nanoph-2017-0057

Katalog-ID:	DOAJ005033039

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520			\|a We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
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allfields	10.1515/nanoph-2017-0057 doi (DE-627)DOAJ005033039 (DE-599)DOAJf7aab51cbce049068822ad0e466d63a2 DE-627 ger DE-627 rakwb eng QC1-999 Ou Yiyu verfasserin aut Efficiency enhancement of InGaN amber MQWs using nanopillar structures 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8. ingan mqws nanopillar qcse strain relaxation light extraction Physics Iida Daisuke verfasserin aut Liu Jin verfasserin aut Wu Kaiyu verfasserin aut Ohkawa Kazuhiro verfasserin aut Boisen Anja verfasserin aut Petersen Paul Michael verfasserin aut Ou Haiyan verfasserin aut In Nanophotonics De Gruyter, 2016 7(2018), 1, Seite 317-322 (DE-627)720169909 (DE-600)2674162-3 21928614 nnns volume:7 year:2018 number:1 pages:317-322 https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/article/f7aab51cbce049068822ad0e466d63a2 kostenfrei https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/toc/2192-8606 Journal toc kostenfrei https://doaj.org/toc/2192-8614 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2018 1 317-322
spelling	10.1515/nanoph-2017-0057 doi (DE-627)DOAJ005033039 (DE-599)DOAJf7aab51cbce049068822ad0e466d63a2 DE-627 ger DE-627 rakwb eng QC1-999 Ou Yiyu verfasserin aut Efficiency enhancement of InGaN amber MQWs using nanopillar structures 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8. ingan mqws nanopillar qcse strain relaxation light extraction Physics Iida Daisuke verfasserin aut Liu Jin verfasserin aut Wu Kaiyu verfasserin aut Ohkawa Kazuhiro verfasserin aut Boisen Anja verfasserin aut Petersen Paul Michael verfasserin aut Ou Haiyan verfasserin aut In Nanophotonics De Gruyter, 2016 7(2018), 1, Seite 317-322 (DE-627)720169909 (DE-600)2674162-3 21928614 nnns volume:7 year:2018 number:1 pages:317-322 https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/article/f7aab51cbce049068822ad0e466d63a2 kostenfrei https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/toc/2192-8606 Journal toc kostenfrei https://doaj.org/toc/2192-8614 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2018 1 317-322
allfields_unstemmed	10.1515/nanoph-2017-0057 doi (DE-627)DOAJ005033039 (DE-599)DOAJf7aab51cbce049068822ad0e466d63a2 DE-627 ger DE-627 rakwb eng QC1-999 Ou Yiyu verfasserin aut Efficiency enhancement of InGaN amber MQWs using nanopillar structures 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8. ingan mqws nanopillar qcse strain relaxation light extraction Physics Iida Daisuke verfasserin aut Liu Jin verfasserin aut Wu Kaiyu verfasserin aut Ohkawa Kazuhiro verfasserin aut Boisen Anja verfasserin aut Petersen Paul Michael verfasserin aut Ou Haiyan verfasserin aut In Nanophotonics De Gruyter, 2016 7(2018), 1, Seite 317-322 (DE-627)720169909 (DE-600)2674162-3 21928614 nnns volume:7 year:2018 number:1 pages:317-322 https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/article/f7aab51cbce049068822ad0e466d63a2 kostenfrei https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/toc/2192-8606 Journal toc kostenfrei https://doaj.org/toc/2192-8614 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2018 1 317-322
allfieldsGer	10.1515/nanoph-2017-0057 doi (DE-627)DOAJ005033039 (DE-599)DOAJf7aab51cbce049068822ad0e466d63a2 DE-627 ger DE-627 rakwb eng QC1-999 Ou Yiyu verfasserin aut Efficiency enhancement of InGaN amber MQWs using nanopillar structures 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8. ingan mqws nanopillar qcse strain relaxation light extraction Physics Iida Daisuke verfasserin aut Liu Jin verfasserin aut Wu Kaiyu verfasserin aut Ohkawa Kazuhiro verfasserin aut Boisen Anja verfasserin aut Petersen Paul Michael verfasserin aut Ou Haiyan verfasserin aut In Nanophotonics De Gruyter, 2016 7(2018), 1, Seite 317-322 (DE-627)720169909 (DE-600)2674162-3 21928614 nnns volume:7 year:2018 number:1 pages:317-322 https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/article/f7aab51cbce049068822ad0e466d63a2 kostenfrei https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/toc/2192-8606 Journal toc kostenfrei https://doaj.org/toc/2192-8614 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2018 1 317-322
allfieldsSound	10.1515/nanoph-2017-0057 doi (DE-627)DOAJ005033039 (DE-599)DOAJf7aab51cbce049068822ad0e466d63a2 DE-627 ger DE-627 rakwb eng QC1-999 Ou Yiyu verfasserin aut Efficiency enhancement of InGaN amber MQWs using nanopillar structures 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8. ingan mqws nanopillar qcse strain relaxation light extraction Physics Iida Daisuke verfasserin aut Liu Jin verfasserin aut Wu Kaiyu verfasserin aut Ohkawa Kazuhiro verfasserin aut Boisen Anja verfasserin aut Petersen Paul Michael verfasserin aut Ou Haiyan verfasserin aut In Nanophotonics De Gruyter, 2016 7(2018), 1, Seite 317-322 (DE-627)720169909 (DE-600)2674162-3 21928614 nnns volume:7 year:2018 number:1 pages:317-322 https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/article/f7aab51cbce049068822ad0e466d63a2 kostenfrei https://doi.org/10.1515/nanoph-2017-0057 kostenfrei https://doaj.org/toc/2192-8606 Journal toc kostenfrei https://doaj.org/toc/2192-8614 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2018 1 317-322
language	English
source	In Nanophotonics 7(2018), 1, Seite 317-322 volume:7 year:2018 number:1 pages:317-322
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format_phy_str_mv	Article
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topic_facet	ingan mqws nanopillar qcse strain relaxation light extraction Physics
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container_title	Nanophotonics
authorswithroles_txt_mv	Ou Yiyu @@aut@@ Iida Daisuke @@aut@@ Liu Jin @@aut@@ Wu Kaiyu @@aut@@ Ohkawa Kazuhiro @@aut@@ Boisen Anja @@aut@@ Petersen Paul Michael @@aut@@ Ou Haiyan @@aut@@
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callnumber-first	Q - Science
author	Ou Yiyu
spellingShingle	Ou Yiyu misc QC1-999 misc ingan mqws misc nanopillar misc qcse misc strain relaxation misc light extraction misc Physics Efficiency enhancement of InGaN amber MQWs using nanopillar structures
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topic_title	QC1-999 Efficiency enhancement of InGaN amber MQWs using nanopillar structures ingan mqws nanopillar qcse strain relaxation light extraction
topic	misc QC1-999 misc ingan mqws misc nanopillar misc qcse misc strain relaxation misc light extraction misc Physics
topic_unstemmed	misc QC1-999 misc ingan mqws misc nanopillar misc qcse misc strain relaxation misc light extraction misc Physics
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title	Efficiency enhancement of InGaN amber MQWs using nanopillar structures
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title_full	Efficiency enhancement of InGaN amber MQWs using nanopillar structures
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title_sort	efficiency enhancement of ingan amber mqws using nanopillar structures
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title_auth	Efficiency enhancement of InGaN amber MQWs using nanopillar structures
abstract	We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
abstractGer	We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
abstract_unstemmed	We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
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title_short	Efficiency enhancement of InGaN amber MQWs using nanopillar structures
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Efficiency enhancement of InGaN amber MQWs using nanopillar structures

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