Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing

Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed. Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Anwesha Mukherjee [verfasserIn] Yossi Rosenwaks [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	silicon FETs gas sensor VOC sensor silicon nanowire electrostatically formed nanowire functionalization

Übergeordnetes Werk:	In: Chemosensors - MDPI AG, 2013, 9(2021), 9, p 260
Übergeordnetes Werk:	volume:9 ; year:2021 ; number:9, p 260

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/chemosensors9090260

Katalog-ID:	DOAJ005177219

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allfieldsSound	10.3390/chemosensors9090260 doi (DE-627)DOAJ005177219 (DE-599)DOAJ06b8a3c32d424ce7af5eb4308b991b66 DE-627 ger DE-627 rakwb eng QD415-436 Anwesha Mukherjee verfasserin aut Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed. silicon FETs gas sensor VOC sensor silicon nanowire electrostatically formed nanowire functionalization Biochemistry Yossi Rosenwaks verfasserin aut In Chemosensors MDPI AG, 2013 9(2021), 9, p 260 (DE-627)737287594 (DE-600)2704218-2 22279040 nnns volume:9 year:2021 number:9, p 260 https://doi.org/10.3390/chemosensors9090260 kostenfrei https://doaj.org/article/06b8a3c32d424ce7af5eb4308b991b66 kostenfrei https://www.mdpi.com/2227-9040/9/9/260 kostenfrei https://doaj.org/toc/2227-9040 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 9, p 260
language	English
source	In Chemosensors 9(2021), 9, p 260 volume:9 year:2021 number:9, p 260
sourceStr	In Chemosensors 9(2021), 9, p 260 volume:9 year:2021 number:9, p 260
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institution	findex.gbv.de
topic_facet	silicon FETs gas sensor VOC sensor silicon nanowire electrostatically formed nanowire functionalization Biochemistry
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container_title	Chemosensors
authorswithroles_txt_mv	Anwesha Mukherjee @@aut@@ Yossi Rosenwaks @@aut@@
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callnumber-first	Q - Science
author	Anwesha Mukherjee
spellingShingle	Anwesha Mukherjee misc QD415-436 misc silicon FETs misc gas sensor misc VOC sensor misc silicon nanowire misc electrostatically formed nanowire misc functionalization misc Biochemistry Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing
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topic_title	QD415-436 Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing silicon FETs gas sensor VOC sensor silicon nanowire electrostatically formed nanowire functionalization
topic	misc QD415-436 misc silicon FETs misc gas sensor misc VOC sensor misc silicon nanowire misc electrostatically formed nanowire misc functionalization misc Biochemistry
topic_unstemmed	misc QD415-436 misc silicon FETs misc gas sensor misc VOC sensor misc silicon nanowire misc electrostatically formed nanowire misc functionalization misc Biochemistry
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title	Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing
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title_full	Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing
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title_sort	recent advances in silicon fet devices for gas and volatile organic compound sensing
callnumber	QD415-436
title_auth	Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing
abstract	Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed.
abstractGer	Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed.
abstract_unstemmed	Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed.
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title_short	Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing
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