Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors

In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors i...
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Autor*in:	Der-Yuh Lin [verfasserIn] Hung-Pin Hsu [verfasserIn] Cheng-Wen Wang [verfasserIn] Shang-Wei Chen [verfasserIn] Yu-Tai Shih [verfasserIn] Sheng-Beng Hwang [verfasserIn] Piotr Sitarek [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	2D semiconductors absorption van der Waals

Übergeordnetes Werk:	In: Materials - MDPI AG, 2009, 15(2022), 18, p 6304
Übergeordnetes Werk:	volume:15 ; year:2022 ; number:18, p 6304

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/ma15186304

Katalog-ID:	DOAJ005631203

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allfields	10.3390/ma15186304 doi (DE-627)DOAJ005631203 (DE-599)DOAJe564670847e34e17bdc7187db89cb1db DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Der-Yuh Lin verfasserin aut Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS<sub<2−x</sub<Se<sub<x</sub< were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed. 2D semiconductors absorption van der Waals Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Hung-Pin Hsu verfasserin aut Cheng-Wen Wang verfasserin aut Shang-Wei Chen verfasserin aut Yu-Tai Shih verfasserin aut Sheng-Beng Hwang verfasserin aut Piotr Sitarek verfasserin aut In Materials MDPI AG, 2009 15(2022), 18, p 6304 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:15 year:2022 number:18, p 6304 https://doi.org/10.3390/ma15186304 kostenfrei https://doaj.org/article/e564670847e34e17bdc7187db89cb1db kostenfrei https://www.mdpi.com/1996-1944/15/18/6304 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2022 18, p 6304
spelling	10.3390/ma15186304 doi (DE-627)DOAJ005631203 (DE-599)DOAJe564670847e34e17bdc7187db89cb1db DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Der-Yuh Lin verfasserin aut Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS<sub<2−x</sub<Se<sub<x</sub< were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed. 2D semiconductors absorption van der Waals Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Hung-Pin Hsu verfasserin aut Cheng-Wen Wang verfasserin aut Shang-Wei Chen verfasserin aut Yu-Tai Shih verfasserin aut Sheng-Beng Hwang verfasserin aut Piotr Sitarek verfasserin aut In Materials MDPI AG, 2009 15(2022), 18, p 6304 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:15 year:2022 number:18, p 6304 https://doi.org/10.3390/ma15186304 kostenfrei https://doaj.org/article/e564670847e34e17bdc7187db89cb1db kostenfrei https://www.mdpi.com/1996-1944/15/18/6304 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2022 18, p 6304
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callnumber-first	T - Technology
author	Der-Yuh Lin
spellingShingle	Der-Yuh Lin misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc 2D semiconductors misc absorption misc van der Waals misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors
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topic_title	TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors 2D semiconductors absorption van der Waals
topic	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc 2D semiconductors misc absorption misc van der Waals misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
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title	Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors
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title_full	Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors
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title_sort	temperature-dependent absorption of ternary hfs<sub<2−x</sub<se<sub<x</sub< 2d layered semiconductors
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title_auth	Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors
abstract	In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS<sub<2−x</sub<Se<sub<x</sub< were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.
abstractGer	In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS<sub<2−x</sub<Se<sub<x</sub< were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.
abstract_unstemmed	In this study, we present the investigation of optical properties on a series of HfS<sub<2−x</sub<Se<sub<x</sub< crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS<sub<2−x</sub<Se<sub<x</sub< were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.
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title_short	Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors
url	https://doi.org/10.3390/ma15186304 https://doaj.org/article/e564670847e34e17bdc7187db89cb1db https://www.mdpi.com/1996-1944/15/18/6304 https://doaj.org/toc/1996-1944
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up_date	2024-07-03T16:11:11.680Z
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Temperature-Dependent Absorption of Ternary HfS<sub<2−x</sub<Se<sub<x</sub< 2D Layered Semiconductors

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