On the Formulation of Self-Heating Models for Circuit Simulation
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal no...
Ausführliche Beschreibung
Autor*in: |
Lining Zhang [verfasserIn] Debin Song [verfasserIn] Ying Xiao [verfasserIn] Xinnan Lin [verfasserIn] Mansun Chan [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2018 |
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Übergeordnetes Werk: |
In: IEEE Journal of the Electron Devices Society - IEEE, 2014, 6(2018), Seite 291-297 |
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Übergeordnetes Werk: |
volume:6 ; year:2018 ; pages:291-297 |
Links: |
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DOI / URN: |
10.1109/JEDS.2018.2801301 |
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Katalog-ID: |
DOAJ007894651 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | DOAJ007894651 | ||
003 | DE-627 | ||
005 | 20230501184028.0 | ||
007 | cr uuu---uuuuu | ||
008 | 230225s2018 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1109/JEDS.2018.2801301 |2 doi | |
035 | |a (DE-627)DOAJ007894651 | ||
035 | |a (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
050 | 0 | |a TK1-9971 | |
100 | 0 | |a Lining Zhang |e verfasserin |4 aut | |
245 | 1 | 0 | |a On the Formulation of Self-Heating Models for Circuit Simulation |
264 | 1 | |c 2018 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. | ||
650 | 4 | |a Self-heating | |
650 | 4 | |a internal-node free | |
650 | 4 | |a FinFETs circuits | |
650 | 4 | |a circuit self-heating | |
653 | 0 | |a Electrical engineering. Electronics. Nuclear engineering | |
700 | 0 | |a Debin Song |e verfasserin |4 aut | |
700 | 0 | |a Ying Xiao |e verfasserin |4 aut | |
700 | 0 | |a Xinnan Lin |e verfasserin |4 aut | |
700 | 0 | |a Mansun Chan |e verfasserin |4 aut | |
773 | 0 | 8 | |i In |t IEEE Journal of the Electron Devices Society |d IEEE, 2014 |g 6(2018), Seite 291-297 |w (DE-627)733363016 |w (DE-600)2696552-5 |x 21686734 |7 nnns |
773 | 1 | 8 | |g volume:6 |g year:2018 |g pages:291-297 |
856 | 4 | 0 | |u https://doi.org/10.1109/JEDS.2018.2801301 |z kostenfrei |
856 | 4 | 0 | |u https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 |z kostenfrei |
856 | 4 | 0 | |u https://ieeexplore.ieee.org/document/8281443/ |z kostenfrei |
856 | 4 | 2 | |u https://doaj.org/toc/2168-6734 |y Journal toc |z kostenfrei |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_DOAJ | ||
912 | |a SSG-OLC-PHA | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 6 |j 2018 |h 291-297 |
author_variant |
l z lz d s ds y x yx x l xl m c mc |
---|---|
matchkey_str |
article:21686734:2018----::nhfruainfefetnmdlfr |
hierarchy_sort_str |
2018 |
callnumber-subject-code |
TK |
publishDate |
2018 |
allfields |
10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297 |
spelling |
10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297 |
allfields_unstemmed |
10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297 |
allfieldsGer |
10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297 |
allfieldsSound |
10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297 |
language |
English |
source |
In IEEE Journal of the Electron Devices Society 6(2018), Seite 291-297 volume:6 year:2018 pages:291-297 |
sourceStr |
In IEEE Journal of the Electron Devices Society 6(2018), Seite 291-297 volume:6 year:2018 pages:291-297 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering |
isfreeaccess_bool |
true |
container_title |
IEEE Journal of the Electron Devices Society |
authorswithroles_txt_mv |
Lining Zhang @@aut@@ Debin Song @@aut@@ Ying Xiao @@aut@@ Xinnan Lin @@aut@@ Mansun Chan @@aut@@ |
publishDateDaySort_date |
2018-01-01T00:00:00Z |
hierarchy_top_id |
733363016 |
id |
DOAJ007894651 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ007894651</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501184028.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JEDS.2018.2801301</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ007894651</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf10df73ded2b4b9f8713faf172088c32</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK1-9971</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Lining Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the Formulation of Self-Heating Models for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Self-heating</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">internal-node free</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FinFETs circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit self-heating</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electrical engineering. Electronics. Nuclear engineering</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Debin Song</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ying Xiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinnan Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mansun Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Journal of the Electron Devices Society</subfield><subfield code="d">IEEE, 2014</subfield><subfield code="g">6(2018), Seite 291-297</subfield><subfield code="w">(DE-627)733363016</subfield><subfield code="w">(DE-600)2696552-5</subfield><subfield code="x">21686734</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2018</subfield><subfield code="g">pages:291-297</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JEDS.2018.2801301</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/8281443/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2168-6734</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2018</subfield><subfield code="h">291-297</subfield></datafield></record></collection>
|
callnumber-first |
T - Technology |
author |
Lining Zhang |
spellingShingle |
Lining Zhang misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering On the Formulation of Self-Heating Models for Circuit Simulation |
authorStr |
Lining Zhang |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)733363016 |
format |
electronic Article |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut |
collection |
DOAJ |
remote_str |
true |
callnumber-label |
TK1-9971 |
illustrated |
Not Illustrated |
issn |
21686734 |
topic_title |
TK1-9971 On the Formulation of Self-Heating Models for Circuit Simulation Self-heating internal-node free FinFETs circuits circuit self-heating |
topic |
misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering |
topic_unstemmed |
misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering |
topic_browse |
misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
IEEE Journal of the Electron Devices Society |
hierarchy_parent_id |
733363016 |
hierarchy_top_title |
IEEE Journal of the Electron Devices Society |
isfreeaccess_txt |
true |
familylinks_str_mv |
(DE-627)733363016 (DE-600)2696552-5 |
title |
On the Formulation of Self-Heating Models for Circuit Simulation |
ctrlnum |
(DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 |
title_full |
On the Formulation of Self-Heating Models for Circuit Simulation |
author_sort |
Lining Zhang |
journal |
IEEE Journal of the Electron Devices Society |
journalStr |
IEEE Journal of the Electron Devices Society |
callnumber-first-code |
T |
lang_code |
eng |
isOA_bool |
true |
recordtype |
marc |
publishDateSort |
2018 |
contenttype_str_mv |
txt |
container_start_page |
291 |
author_browse |
Lining Zhang Debin Song Ying Xiao Xinnan Lin Mansun Chan |
container_volume |
6 |
class |
TK1-9971 |
format_se |
Elektronische Aufsätze |
author-letter |
Lining Zhang |
doi_str_mv |
10.1109/JEDS.2018.2801301 |
author2-role |
verfasserin |
title_sort |
on the formulation of self-heating models for circuit simulation |
callnumber |
TK1-9971 |
title_auth |
On the Formulation of Self-Heating Models for Circuit Simulation |
abstract |
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. |
abstractGer |
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. |
abstract_unstemmed |
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 |
title_short |
On the Formulation of Self-Heating Models for Circuit Simulation |
url |
https://doi.org/10.1109/JEDS.2018.2801301 https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 https://ieeexplore.ieee.org/document/8281443/ https://doaj.org/toc/2168-6734 |
remote_bool |
true |
author2 |
Debin Song Ying Xiao Xinnan Lin Mansun Chan |
author2Str |
Debin Song Ying Xiao Xinnan Lin Mansun Chan |
ppnlink |
733363016 |
callnumber-subject |
TK - Electrical and Nuclear Engineering |
mediatype_str_mv |
c |
isOA_txt |
true |
hochschulschrift_bool |
false |
doi_str |
10.1109/JEDS.2018.2801301 |
callnumber-a |
TK1-9971 |
up_date |
2024-07-03T14:45:15.967Z |
_version_ |
1803569506255110144 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ007894651</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501184028.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JEDS.2018.2801301</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ007894651</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf10df73ded2b4b9f8713faf172088c32</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK1-9971</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Lining Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the Formulation of Self-Heating Models for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Self-heating</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">internal-node free</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FinFETs circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit self-heating</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electrical engineering. Electronics. Nuclear engineering</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Debin Song</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ying Xiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinnan Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mansun Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Journal of the Electron Devices Society</subfield><subfield code="d">IEEE, 2014</subfield><subfield code="g">6(2018), Seite 291-297</subfield><subfield code="w">(DE-627)733363016</subfield><subfield code="w">(DE-600)2696552-5</subfield><subfield code="x">21686734</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2018</subfield><subfield code="g">pages:291-297</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JEDS.2018.2801301</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/8281443/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2168-6734</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2018</subfield><subfield code="h">291-297</subfield></datafield></record></collection>
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score |
7.4004498 |