On the Formulation of Self-Heating Models for Circuit Simulation

Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal no...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Lining Zhang [verfasserIn] Debin Song [verfasserIn] Ying Xiao [verfasserIn] Xinnan Lin [verfasserIn] Mansun Chan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Self-heating internal-node free FinFETs circuits circuit self-heating

Übergeordnetes Werk:	In: IEEE Journal of the Electron Devices Society - IEEE, 2014, 6(2018), Seite 291-297
Übergeordnetes Werk:	volume:6 ; year:2018 ; pages:291-297

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/JEDS.2018.2801301

Katalog-ID:	DOAJ007894651

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ007894651
003	DE-627
005	20230501184028.0
007	cr uuu---uuuuu
008	230225s2018 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1109/JEDS.2018.2801301 \|2 doi
035			\|a (DE-627)DOAJ007894651
035			\|a (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a TK1-9971
100	0		\|a Lining Zhang \|e verfasserin \|4 aut
245	1	0	\|a On the Formulation of Self-Heating Models for Circuit Simulation
264		1	\|c 2018
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.
650		4	\|a Self-heating
650		4	\|a internal-node free
650		4	\|a FinFETs circuits
650		4	\|a circuit self-heating
653		0	\|a Electrical engineering. Electronics. Nuclear engineering
700	0		\|a Debin Song \|e verfasserin \|4 aut
700	0		\|a Ying Xiao \|e verfasserin \|4 aut
700	0		\|a Xinnan Lin \|e verfasserin \|4 aut
700	0		\|a Mansun Chan \|e verfasserin \|4 aut
773	0	8	\|i In \|t IEEE Journal of the Electron Devices Society \|d IEEE, 2014 \|g 6(2018), Seite 291-297 \|w (DE-627)733363016 \|w (DE-600)2696552-5 \|x 21686734 \|7 nnns
773	1	8	\|g volume:6 \|g year:2018 \|g pages:291-297
856	4	0	\|u https://doi.org/10.1109/JEDS.2018.2801301 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 \|z kostenfrei
856	4	0	\|u https://ieeexplore.ieee.org/document/8281443/ \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2168-6734 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 6 \|j 2018 \|h 291-297

Indexfelder

author_variant	l z lz d s ds y x yx x l xl m c mc
matchkey_str	article:21686734:2018----::nhfruainfefetnmdlfr
hierarchy_sort_str	2018
callnumber-subject-code	TK
publishDate	2018
allfields	10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297
spelling	10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297
allfields_unstemmed	10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297
allfieldsGer	10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297
allfieldsSound	10.1109/JEDS.2018.2801301 doi (DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32 DE-627 ger DE-627 rakwb eng TK1-9971 Lining Zhang verfasserin aut On the Formulation of Self-Heating Models for Circuit Simulation 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model. Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering Debin Song verfasserin aut Ying Xiao verfasserin aut Xinnan Lin verfasserin aut Mansun Chan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 6(2018), Seite 291-297 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:6 year:2018 pages:291-297 https://doi.org/10.1109/JEDS.2018.2801301 kostenfrei https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 kostenfrei https://ieeexplore.ieee.org/document/8281443/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2018 291-297
language	English
source	In IEEE Journal of the Electron Devices Society 6(2018), Seite 291-297 volume:6 year:2018 pages:291-297
sourceStr	In IEEE Journal of the Electron Devices Society 6(2018), Seite 291-297 volume:6 year:2018 pages:291-297
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Self-heating internal-node free FinFETs circuits circuit self-heating Electrical engineering. Electronics. Nuclear engineering
isfreeaccess_bool	true
container_title	IEEE Journal of the Electron Devices Society
authorswithroles_txt_mv	Lining Zhang @@aut@@ Debin Song @@aut@@ Ying Xiao @@aut@@ Xinnan Lin @@aut@@ Mansun Chan @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	733363016
id	DOAJ007894651
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ007894651</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501184028.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JEDS.2018.2801301</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ007894651</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf10df73ded2b4b9f8713faf172088c32</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK1-9971</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Lining Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the Formulation of Self-Heating Models for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Self-heating</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">internal-node free</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FinFETs circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit self-heating</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electrical engineering. Electronics. Nuclear engineering</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Debin Song</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ying Xiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinnan Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mansun Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Journal of the Electron Devices Society</subfield><subfield code="d">IEEE, 2014</subfield><subfield code="g">6(2018), Seite 291-297</subfield><subfield code="w">(DE-627)733363016</subfield><subfield code="w">(DE-600)2696552-5</subfield><subfield code="x">21686734</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2018</subfield><subfield code="g">pages:291-297</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JEDS.2018.2801301</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/8281443/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2168-6734</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2018</subfield><subfield code="h">291-297</subfield></datafield></record></collection>
callnumber-first	T - Technology
author	Lining Zhang
spellingShingle	Lining Zhang misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering On the Formulation of Self-Heating Models for Circuit Simulation
authorStr	Lining Zhang
ppnlink_with_tag_str_mv	@@773@@(DE-627)733363016
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	TK1-9971
illustrated	Not Illustrated
issn	21686734
topic_title	TK1-9971 On the Formulation of Self-Heating Models for Circuit Simulation Self-heating internal-node free FinFETs circuits circuit self-heating
topic	misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering
topic_unstemmed	misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering
topic_browse	misc TK1-9971 misc Self-heating misc internal-node free misc FinFETs circuits misc circuit self-heating misc Electrical engineering. Electronics. Nuclear engineering
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	IEEE Journal of the Electron Devices Society
hierarchy_parent_id	733363016
hierarchy_top_title	IEEE Journal of the Electron Devices Society
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)733363016 (DE-600)2696552-5
title	On the Formulation of Self-Heating Models for Circuit Simulation
ctrlnum	(DE-627)DOAJ007894651 (DE-599)DOAJf10df73ded2b4b9f8713faf172088c32
title_full	On the Formulation of Self-Heating Models for Circuit Simulation
author_sort	Lining Zhang
journal	IEEE Journal of the Electron Devices Society
journalStr	IEEE Journal of the Electron Devices Society
callnumber-first-code	T
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2018
contenttype_str_mv	txt
container_start_page	291
author_browse	Lining Zhang Debin Song Ying Xiao Xinnan Lin Mansun Chan
container_volume	6
class	TK1-9971
format_se	Elektronische Aufsätze
author-letter	Lining Zhang
doi_str_mv	10.1109/JEDS.2018.2801301
author2-role	verfasserin
title_sort	on the formulation of self-heating models for circuit simulation
callnumber	TK1-9971
title_auth	On the Formulation of Self-Heating Models for Circuit Simulation
abstract	Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.
abstractGer	Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.
abstract_unstemmed	Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
title_short	On the Formulation of Self-Heating Models for Circuit Simulation
url	https://doi.org/10.1109/JEDS.2018.2801301 https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32 https://ieeexplore.ieee.org/document/8281443/ https://doaj.org/toc/2168-6734
remote_bool	true
author2	Debin Song Ying Xiao Xinnan Lin Mansun Chan
author2Str	Debin Song Ying Xiao Xinnan Lin Mansun Chan
ppnlink	733363016
callnumber-subject	TK - Electrical and Nuclear Engineering
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1109/JEDS.2018.2801301
callnumber-a	TK1-9971
up_date	2024-07-03T14:45:15.967Z
_version_	1803569506255110144
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ007894651</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501184028.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230225s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JEDS.2018.2801301</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ007894651</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf10df73ded2b4b9f8713faf172088c32</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK1-9971</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Lining Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the Formulation of Self-Heating Models for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Self-heating</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">internal-node free</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FinFETs circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit self-heating</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electrical engineering. Electronics. Nuclear engineering</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Debin Song</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ying Xiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinnan Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mansun Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Journal of the Electron Devices Society</subfield><subfield code="d">IEEE, 2014</subfield><subfield code="g">6(2018), Seite 291-297</subfield><subfield code="w">(DE-627)733363016</subfield><subfield code="w">(DE-600)2696552-5</subfield><subfield code="x">21686734</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2018</subfield><subfield code="g">pages:291-297</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JEDS.2018.2801301</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/8281443/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2168-6734</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2018</subfield><subfield code="h">291-297</subfield></datafield></record></collection>
score	7.4004498

Nicht das Richtige dabei?

Schreiben Sie uns!

On the Formulation of Self-Heating Models for Circuit Simulation

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?