Interfacial quality to control tunnelling magnetoresistance

Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of th...
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Autor*in:	Atsufumi Hirohata [verfasserIn] Kelvin Elphick [verfasserIn] David C. Lloyd [verfasserIn] Shigemi Mizukami [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching

Übergeordnetes Werk:	In: Frontiers in Physics - Frontiers Media S.A., 2014, 10(2022)
Übergeordnetes Werk:	volume:10 ; year:2022

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3389/fphy.2022.1007989

Katalog-ID:	DOAJ008872546

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520			\|a Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance.
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allfields	10.3389/fphy.2022.1007989 doi (DE-627)DOAJ008872546 (DE-599)DOAJ0afe610142a748539557883510663b95 DE-627 ger DE-627 rakwb eng QC1-999 Atsufumi Hirohata verfasserin aut Interfacial quality to control tunnelling magnetoresistance 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance. magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching Physics Kelvin Elphick verfasserin aut David C. Lloyd verfasserin aut Shigemi Mizukami verfasserin aut Shigemi Mizukami verfasserin aut In Frontiers in Physics Frontiers Media S.A., 2014 10(2022) (DE-627)750371749 (DE-600)2721033-9 2296424X nnns volume:10 year:2022 https://doi.org/10.3389/fphy.2022.1007989 kostenfrei https://doaj.org/article/0afe610142a748539557883510663b95 kostenfrei https://www.frontiersin.org/articles/10.3389/fphy.2022.1007989/full kostenfrei https://doaj.org/toc/2296-424X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022
spelling	10.3389/fphy.2022.1007989 doi (DE-627)DOAJ008872546 (DE-599)DOAJ0afe610142a748539557883510663b95 DE-627 ger DE-627 rakwb eng QC1-999 Atsufumi Hirohata verfasserin aut Interfacial quality to control tunnelling magnetoresistance 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance. magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching Physics Kelvin Elphick verfasserin aut David C. Lloyd verfasserin aut Shigemi Mizukami verfasserin aut Shigemi Mizukami verfasserin aut In Frontiers in Physics Frontiers Media S.A., 2014 10(2022) (DE-627)750371749 (DE-600)2721033-9 2296424X nnns volume:10 year:2022 https://doi.org/10.3389/fphy.2022.1007989 kostenfrei https://doaj.org/article/0afe610142a748539557883510663b95 kostenfrei https://www.frontiersin.org/articles/10.3389/fphy.2022.1007989/full kostenfrei https://doaj.org/toc/2296-424X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022
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allfieldsGer	10.3389/fphy.2022.1007989 doi (DE-627)DOAJ008872546 (DE-599)DOAJ0afe610142a748539557883510663b95 DE-627 ger DE-627 rakwb eng QC1-999 Atsufumi Hirohata verfasserin aut Interfacial quality to control tunnelling magnetoresistance 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance. magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching Physics Kelvin Elphick verfasserin aut David C. Lloyd verfasserin aut Shigemi Mizukami verfasserin aut Shigemi Mizukami verfasserin aut In Frontiers in Physics Frontiers Media S.A., 2014 10(2022) (DE-627)750371749 (DE-600)2721033-9 2296424X nnns volume:10 year:2022 https://doi.org/10.3389/fphy.2022.1007989 kostenfrei https://doaj.org/article/0afe610142a748539557883510663b95 kostenfrei https://www.frontiersin.org/articles/10.3389/fphy.2022.1007989/full kostenfrei https://doaj.org/toc/2296-424X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022
allfieldsSound	10.3389/fphy.2022.1007989 doi (DE-627)DOAJ008872546 (DE-599)DOAJ0afe610142a748539557883510663b95 DE-627 ger DE-627 rakwb eng QC1-999 Atsufumi Hirohata verfasserin aut Interfacial quality to control tunnelling magnetoresistance 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance. magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching Physics Kelvin Elphick verfasserin aut David C. Lloyd verfasserin aut Shigemi Mizukami verfasserin aut Shigemi Mizukami verfasserin aut In Frontiers in Physics Frontiers Media S.A., 2014 10(2022) (DE-627)750371749 (DE-600)2721033-9 2296424X nnns volume:10 year:2022 https://doi.org/10.3389/fphy.2022.1007989 kostenfrei https://doaj.org/article/0afe610142a748539557883510663b95 kostenfrei https://www.frontiersin.org/articles/10.3389/fphy.2022.1007989/full kostenfrei https://doaj.org/toc/2296-424X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022
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callnumber-first	Q - Science
author	Atsufumi Hirohata
spellingShingle	Atsufumi Hirohata misc QC1-999 misc magnetic tunnel junction (MTJ) misc tunnelling magnetoresistance (TMR) ratio misc interfacial disordering misc dislocations misc lattice matching misc Physics Interfacial quality to control tunnelling magnetoresistance
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topic_title	QC1-999 Interfacial quality to control tunnelling magnetoresistance magnetic tunnel junction (MTJ) tunnelling magnetoresistance (TMR) ratio interfacial disordering dislocations lattice matching
topic	misc QC1-999 misc magnetic tunnel junction (MTJ) misc tunnelling magnetoresistance (TMR) ratio misc interfacial disordering misc dislocations misc lattice matching misc Physics
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title	Interfacial quality to control tunnelling magnetoresistance
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title_full	Interfacial quality to control tunnelling magnetoresistance
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title_sort	interfacial quality to control tunnelling magnetoresistance
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title_auth	Interfacial quality to control tunnelling magnetoresistance
abstract	Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance.
abstractGer	Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance.
abstract_unstemmed	Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance.
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title_short	Interfacial quality to control tunnelling magnetoresistance
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