Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-...
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Autor*in:	Yan Fan [verfasserIn] Tao Wang [verfasserIn] Yinwei Qiu [verfasserIn] Yinli Yang [verfasserIn] Qiubo Pan [verfasserIn] Jun Zheng [verfasserIn] Songwei Zeng [verfasserIn] Wei Liu [verfasserIn] Gang Lou [verfasserIn] Liang Chen [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	undoped p–n junction vertical p–n junction graphene oxide

Übergeordnetes Werk:	In: Molecules - MDPI AG, 2003, 26(2021), 22, p 6849
Übergeordnetes Werk:	volume:26 ; year:2021 ; number:22, p 6849

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/molecules26226849

Katalog-ID:	DOAJ008999651

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allfields	10.3390/molecules26226849 doi (DE-627)DOAJ008999651 (DE-599)DOAJ13f3166181364a9b9f01e0ac1c875650 DE-627 ger DE-627 rakwb eng QD241-441 Yan Fan verfasserin aut Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. undoped p–n junction vertical p–n junction graphene oxide Organic chemistry Tao Wang verfasserin aut Yinwei Qiu verfasserin aut Yinli Yang verfasserin aut Qiubo Pan verfasserin aut Jun Zheng verfasserin aut Songwei Zeng verfasserin aut Wei Liu verfasserin aut Gang Lou verfasserin aut Liang Chen verfasserin aut In Molecules MDPI AG, 2003 26(2021), 22, p 6849 (DE-627)311313132 (DE-600)2008644-1 14203049 nnns volume:26 year:2021 number:22, p 6849 https://doi.org/10.3390/molecules26226849 kostenfrei https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650 kostenfrei https://www.mdpi.com/1420-3049/26/22/6849 kostenfrei https://doaj.org/toc/1420-3049 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 26 2021 22, p 6849
spelling	10.3390/molecules26226849 doi (DE-627)DOAJ008999651 (DE-599)DOAJ13f3166181364a9b9f01e0ac1c875650 DE-627 ger DE-627 rakwb eng QD241-441 Yan Fan verfasserin aut Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. undoped p–n junction vertical p–n junction graphene oxide Organic chemistry Tao Wang verfasserin aut Yinwei Qiu verfasserin aut Yinli Yang verfasserin aut Qiubo Pan verfasserin aut Jun Zheng verfasserin aut Songwei Zeng verfasserin aut Wei Liu verfasserin aut Gang Lou verfasserin aut Liang Chen verfasserin aut In Molecules MDPI AG, 2003 26(2021), 22, p 6849 (DE-627)311313132 (DE-600)2008644-1 14203049 nnns volume:26 year:2021 number:22, p 6849 https://doi.org/10.3390/molecules26226849 kostenfrei https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650 kostenfrei https://www.mdpi.com/1420-3049/26/22/6849 kostenfrei https://doaj.org/toc/1420-3049 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 26 2021 22, p 6849
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allfieldsGer	10.3390/molecules26226849 doi (DE-627)DOAJ008999651 (DE-599)DOAJ13f3166181364a9b9f01e0ac1c875650 DE-627 ger DE-627 rakwb eng QD241-441 Yan Fan verfasserin aut Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. undoped p–n junction vertical p–n junction graphene oxide Organic chemistry Tao Wang verfasserin aut Yinwei Qiu verfasserin aut Yinli Yang verfasserin aut Qiubo Pan verfasserin aut Jun Zheng verfasserin aut Songwei Zeng verfasserin aut Wei Liu verfasserin aut Gang Lou verfasserin aut Liang Chen verfasserin aut In Molecules MDPI AG, 2003 26(2021), 22, p 6849 (DE-627)311313132 (DE-600)2008644-1 14203049 nnns volume:26 year:2021 number:22, p 6849 https://doi.org/10.3390/molecules26226849 kostenfrei https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650 kostenfrei https://www.mdpi.com/1420-3049/26/22/6849 kostenfrei https://doaj.org/toc/1420-3049 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 26 2021 22, p 6849
allfieldsSound	10.3390/molecules26226849 doi (DE-627)DOAJ008999651 (DE-599)DOAJ13f3166181364a9b9f01e0ac1c875650 DE-627 ger DE-627 rakwb eng QD241-441 Yan Fan verfasserin aut Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors. undoped p–n junction vertical p–n junction graphene oxide Organic chemistry Tao Wang verfasserin aut Yinwei Qiu verfasserin aut Yinli Yang verfasserin aut Qiubo Pan verfasserin aut Jun Zheng verfasserin aut Songwei Zeng verfasserin aut Wei Liu verfasserin aut Gang Lou verfasserin aut Liang Chen verfasserin aut In Molecules MDPI AG, 2003 26(2021), 22, p 6849 (DE-627)311313132 (DE-600)2008644-1 14203049 nnns volume:26 year:2021 number:22, p 6849 https://doi.org/10.3390/molecules26226849 kostenfrei https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650 kostenfrei https://www.mdpi.com/1420-3049/26/22/6849 kostenfrei https://doaj.org/toc/1420-3049 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 26 2021 22, p 6849
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topic_facet	undoped p–n junction vertical p–n junction graphene oxide Organic chemistry
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authorswithroles_txt_mv	Yan Fan @@aut@@ Tao Wang @@aut@@ Yinwei Qiu @@aut@@ Yinli Yang @@aut@@ Qiubo Pan @@aut@@ Jun Zheng @@aut@@ Songwei Zeng @@aut@@ Wei Liu @@aut@@ Gang Lou @@aut@@ Liang Chen @@aut@@
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callnumber-first	Q - Science
author	Yan Fan
spellingShingle	Yan Fan misc QD241-441 misc undoped p–n junction misc vertical p–n junction misc graphene oxide misc Organic chemistry Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
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topic_title	QD241-441 Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect undoped p–n junction vertical p–n junction graphene oxide
topic	misc QD241-441 misc undoped p–n junction misc vertical p–n junction misc graphene oxide misc Organic chemistry
topic_unstemmed	misc QD241-441 misc undoped p–n junction misc vertical p–n junction misc graphene oxide misc Organic chemistry
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title	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
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author_browse	Yan Fan Tao Wang Yinwei Qiu Yinli Yang Qiubo Pan Jun Zheng Songwei Zeng Wei Liu Gang Lou Liang Chen
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title_sort	pure graphene oxide vertical p–n junction with remarkable rectification effect
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title_auth	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
abstract	Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
abstractGer	Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
abstract_unstemmed	Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
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container_issue	22, p 6849
title_short	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
url	https://doi.org/10.3390/molecules26226849 https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650 https://www.mdpi.com/1420-3049/26/22/6849 https://doaj.org/toc/1420-3049
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author2	Tao Wang Yinwei Qiu Yinli Yang Qiubo Pan Jun Zheng Songwei Zeng Wei Liu Gang Lou Liang Chen
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up_date	2024-07-03T21:24:04.113Z
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Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

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