Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors

Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in...
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Autor*in:	Jian Zhang [verfasserIn] Siyu Liu [verfasserIn] Jean Pierre Nshimiyimana [verfasserIn] Ya Deng [verfasserIn] Xiao Hu [verfasserIn] Xiannian Chi [verfasserIn] Pei Wu [verfasserIn] Jia Liu [verfasserIn] Weiguo Chu [verfasserIn] Lianfeng Sun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	Carbon nanotube Van Hove singularities Schottky barrier transistors

Übergeordnetes Werk:	In: Nano-Micro Letters - SpringerOpen, 2009, 10(2017), 2, Seite 6
Übergeordnetes Werk:	volume:10 ; year:2017 ; number:2 ; pages:6

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1007/s40820-017-0171-3

Katalog-ID:	DOAJ010410260

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allfields	10.1007/s40820-017-0171-3 doi (DE-627)DOAJ010410260 (DE-599)DOAJ6f1870a9e2054e97802984387ebef7ba DE-627 ger DE-627 rakwb eng Jian Zhang verfasserin aut Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. Carbon nanotube Van Hove singularities Schottky barrier transistors Technology T Siyu Liu verfasserin aut Jean Pierre Nshimiyimana verfasserin aut Ya Deng verfasserin aut Xiao Hu verfasserin aut Xiannian Chi verfasserin aut Pei Wu verfasserin aut Jia Liu verfasserin aut Weiguo Chu verfasserin aut Lianfeng Sun verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 10(2017), 2, Seite 6 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:10 year:2017 number:2 pages:6 https://doi.org/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba kostenfrei http://link.springer.com/article/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2 6
spelling	10.1007/s40820-017-0171-3 doi (DE-627)DOAJ010410260 (DE-599)DOAJ6f1870a9e2054e97802984387ebef7ba DE-627 ger DE-627 rakwb eng Jian Zhang verfasserin aut Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. Carbon nanotube Van Hove singularities Schottky barrier transistors Technology T Siyu Liu verfasserin aut Jean Pierre Nshimiyimana verfasserin aut Ya Deng verfasserin aut Xiao Hu verfasserin aut Xiannian Chi verfasserin aut Pei Wu verfasserin aut Jia Liu verfasserin aut Weiguo Chu verfasserin aut Lianfeng Sun verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 10(2017), 2, Seite 6 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:10 year:2017 number:2 pages:6 https://doi.org/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba kostenfrei http://link.springer.com/article/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2 6
allfields_unstemmed	10.1007/s40820-017-0171-3 doi (DE-627)DOAJ010410260 (DE-599)DOAJ6f1870a9e2054e97802984387ebef7ba DE-627 ger DE-627 rakwb eng Jian Zhang verfasserin aut Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. Carbon nanotube Van Hove singularities Schottky barrier transistors Technology T Siyu Liu verfasserin aut Jean Pierre Nshimiyimana verfasserin aut Ya Deng verfasserin aut Xiao Hu verfasserin aut Xiannian Chi verfasserin aut Pei Wu verfasserin aut Jia Liu verfasserin aut Weiguo Chu verfasserin aut Lianfeng Sun verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 10(2017), 2, Seite 6 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:10 year:2017 number:2 pages:6 https://doi.org/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba kostenfrei http://link.springer.com/article/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2 6
allfieldsGer	10.1007/s40820-017-0171-3 doi (DE-627)DOAJ010410260 (DE-599)DOAJ6f1870a9e2054e97802984387ebef7ba DE-627 ger DE-627 rakwb eng Jian Zhang verfasserin aut Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. Carbon nanotube Van Hove singularities Schottky barrier transistors Technology T Siyu Liu verfasserin aut Jean Pierre Nshimiyimana verfasserin aut Ya Deng verfasserin aut Xiao Hu verfasserin aut Xiannian Chi verfasserin aut Pei Wu verfasserin aut Jia Liu verfasserin aut Weiguo Chu verfasserin aut Lianfeng Sun verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 10(2017), 2, Seite 6 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:10 year:2017 number:2 pages:6 https://doi.org/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba kostenfrei http://link.springer.com/article/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2 6
allfieldsSound	10.1007/s40820-017-0171-3 doi (DE-627)DOAJ010410260 (DE-599)DOAJ6f1870a9e2054e97802984387ebef7ba DE-627 ger DE-627 rakwb eng Jian Zhang verfasserin aut Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. Carbon nanotube Van Hove singularities Schottky barrier transistors Technology T Siyu Liu verfasserin aut Jean Pierre Nshimiyimana verfasserin aut Ya Deng verfasserin aut Xiao Hu verfasserin aut Xiannian Chi verfasserin aut Pei Wu verfasserin aut Jia Liu verfasserin aut Weiguo Chu verfasserin aut Lianfeng Sun verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 10(2017), 2, Seite 6 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:10 year:2017 number:2 pages:6 https://doi.org/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba kostenfrei http://link.springer.com/article/10.1007/s40820-017-0171-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2 6
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authorswithroles_txt_mv	Jian Zhang @@aut@@ Siyu Liu @@aut@@ Jean Pierre Nshimiyimana @@aut@@ Ya Deng @@aut@@ Xiao Hu @@aut@@ Xiannian Chi @@aut@@ Pei Wu @@aut@@ Jia Liu @@aut@@ Weiguo Chu @@aut@@ Lianfeng Sun @@aut@@
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author	Jian Zhang
spellingShingle	Jian Zhang misc Carbon nanotube misc Van Hove singularities misc Schottky barrier transistors misc Technology misc T Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
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topic_title	Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors Carbon nanotube Van Hove singularities Schottky barrier transistors
topic	misc Carbon nanotube misc Van Hove singularities misc Schottky barrier transistors misc Technology misc T
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title	Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
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title_full	Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
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author_browse	Jian Zhang Siyu Liu Jean Pierre Nshimiyimana Ya Deng Xiao Hu Xiannian Chi Pei Wu Jia Liu Weiguo Chu Lianfeng Sun
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doi_str_mv	10.1007/s40820-017-0171-3
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title_sort	observation of van hove singularities and temperature dependence of electrical characteristics in suspended carbon nanotube schottky barrier transistors
title_auth	Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
abstract	Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.
abstractGer	Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.
abstract_unstemmed	Abstract A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.
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title_short	Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
url	https://doi.org/10.1007/s40820-017-0171-3 https://doaj.org/article/6f1870a9e2054e97802984387ebef7ba http://link.springer.com/article/10.1007/s40820-017-0171-3 https://doaj.org/toc/2311-6706 https://doaj.org/toc/2150-5551
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author2	Siyu Liu Jean Pierre Nshimiyimana Ya Deng Xiao Hu Xiannian Chi Pei Wu Jia Liu Weiguo Chu Lianfeng Sun
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up_date	2024-07-03T14:40:31.171Z
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