Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers

The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks,...
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Gespeichert in:

Autor*in:	Yujin Jung [verfasserIn] Kwanhong Min [verfasserIn] Soohyun Bae [verfasserIn] Myeongseob Sim [verfasserIn] Yoonmook Kang [verfasserIn] Haeseok Lee [verfasserIn] Donghwan Kim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 13(2020), 24, p 6610
Übergeordnetes Werk:	volume:13 ; year:2020 ; number:24, p 6610

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en13246610

Katalog-ID:	DOAJ013315064

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allfields	10.3390/en13246610 doi (DE-627)DOAJ013315064 (DE-599)DOAJ07f8cd99a685411d98508c77ee254a80 DE-627 ger DE-627 rakwb eng Yujin Jung verfasserin aut Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment. thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T Kwanhong Min verfasserin aut Soohyun Bae verfasserin aut Myeongseob Sim verfasserin aut Yoonmook Kang verfasserin aut Haeseok Lee verfasserin aut Donghwan Kim verfasserin aut In Energies MDPI AG, 2008 13(2020), 24, p 6610 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:13 year:2020 number:24, p 6610 https://doi.org/10.3390/en13246610 kostenfrei https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 kostenfrei https://www.mdpi.com/1996-1073/13/24/6610 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2020 24, p 6610
spelling	10.3390/en13246610 doi (DE-627)DOAJ013315064 (DE-599)DOAJ07f8cd99a685411d98508c77ee254a80 DE-627 ger DE-627 rakwb eng Yujin Jung verfasserin aut Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment. thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T Kwanhong Min verfasserin aut Soohyun Bae verfasserin aut Myeongseob Sim verfasserin aut Yoonmook Kang verfasserin aut Haeseok Lee verfasserin aut Donghwan Kim verfasserin aut In Energies MDPI AG, 2008 13(2020), 24, p 6610 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:13 year:2020 number:24, p 6610 https://doi.org/10.3390/en13246610 kostenfrei https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 kostenfrei https://www.mdpi.com/1996-1073/13/24/6610 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2020 24, p 6610
allfields_unstemmed	10.3390/en13246610 doi (DE-627)DOAJ013315064 (DE-599)DOAJ07f8cd99a685411d98508c77ee254a80 DE-627 ger DE-627 rakwb eng Yujin Jung verfasserin aut Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment. thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T Kwanhong Min verfasserin aut Soohyun Bae verfasserin aut Myeongseob Sim verfasserin aut Yoonmook Kang verfasserin aut Haeseok Lee verfasserin aut Donghwan Kim verfasserin aut In Energies MDPI AG, 2008 13(2020), 24, p 6610 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:13 year:2020 number:24, p 6610 https://doi.org/10.3390/en13246610 kostenfrei https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 kostenfrei https://www.mdpi.com/1996-1073/13/24/6610 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2020 24, p 6610
allfieldsGer	10.3390/en13246610 doi (DE-627)DOAJ013315064 (DE-599)DOAJ07f8cd99a685411d98508c77ee254a80 DE-627 ger DE-627 rakwb eng Yujin Jung verfasserin aut Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment. thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T Kwanhong Min verfasserin aut Soohyun Bae verfasserin aut Myeongseob Sim verfasserin aut Yoonmook Kang verfasserin aut Haeseok Lee verfasserin aut Donghwan Kim verfasserin aut In Energies MDPI AG, 2008 13(2020), 24, p 6610 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:13 year:2020 number:24, p 6610 https://doi.org/10.3390/en13246610 kostenfrei https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 kostenfrei https://www.mdpi.com/1996-1073/13/24/6610 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2020 24, p 6610
allfieldsSound	10.3390/en13246610 doi (DE-627)DOAJ013315064 (DE-599)DOAJ07f8cd99a685411d98508c77ee254a80 DE-627 ger DE-627 rakwb eng Yujin Jung verfasserin aut Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment. thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T Kwanhong Min verfasserin aut Soohyun Bae verfasserin aut Myeongseob Sim verfasserin aut Yoonmook Kang verfasserin aut Haeseok Lee verfasserin aut Donghwan Kim verfasserin aut In Energies MDPI AG, 2008 13(2020), 24, p 6610 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:13 year:2020 number:24, p 6610 https://doi.org/10.3390/en13246610 kostenfrei https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 kostenfrei https://www.mdpi.com/1996-1073/13/24/6610 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2020 24, p 6610
language	English
source	In Energies 13(2020), 24, p 6610 volume:13 year:2020 number:24, p 6610
sourceStr	In Energies 13(2020), 24, p 6610 volume:13 year:2020 number:24, p 6610
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topic_facet	thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching Technology T
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authorswithroles_txt_mv	Yujin Jung @@aut@@ Kwanhong Min @@aut@@ Soohyun Bae @@aut@@ Myeongseob Sim @@aut@@ Yoonmook Kang @@aut@@ Haeseok Lee @@aut@@ Donghwan Kim @@aut@@
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Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. 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author	Yujin Jung
spellingShingle	Yujin Jung misc thermal treatment misc texturing misc monocrystalline Si texturing misc diamond wire-sawn mono-silicon wafer misc alkaline etching misc anisotropic etching misc Technology misc T Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
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topic_title	Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers thermal treatment texturing monocrystalline Si texturing diamond wire-sawn mono-silicon wafer alkaline etching anisotropic etching
topic	misc thermal treatment misc texturing misc monocrystalline Si texturing misc diamond wire-sawn mono-silicon wafer misc alkaline etching misc anisotropic etching misc Technology misc T
topic_unstemmed	misc thermal treatment misc texturing misc monocrystalline Si texturing misc diamond wire-sawn mono-silicon wafer misc alkaline etching misc anisotropic etching misc Technology misc T
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title	Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
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title_full	Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
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title_sort	pre-texturing thermal treatment for saw-damage-removal-free wet texturing of monocrystalline silicon wafers
title_auth	Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
abstract	The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
abstractGer	The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
abstract_unstemmed	The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
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title_short	Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
url	https://doi.org/10.3390/en13246610 https://doaj.org/article/07f8cd99a685411d98508c77ee254a80 https://www.mdpi.com/1996-1073/13/24/6610 https://doaj.org/toc/1996-1073
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up_date	2024-07-03T16:57:54.502Z
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Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers

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