W‐Band MMIC chipset in 0.1‐μm mHEMT technology

We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Jong‐Min Lee [verfasserIn] Woo‐Jin Chang [verfasserIn] Dong Min Kang [verfasserIn] Byoung‐Gue Min [verfasserIn] Hyung Sup Yoon [verfasserIn] Sung‐Jae Chang [verfasserIn] Hyun‐Wook Jung [verfasserIn] Wansik Kim [verfasserIn] Jooyong Jung [verfasserIn] Jongpil Kim [verfasserIn] Mihui Seo [verfasserIn] Sosu Kim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	frequency multiplier image‐rejection mixer lna mhemt mmic

Übergeordnetes Werk:	In: ETRI Journal - Electronics and Telecommunications Research Institute (ETRI), 2003, 42(2020), 4, Seite 549-561
Übergeordnetes Werk:	volume:42 ; year:2020 ; number:4 ; pages:549-561

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.4218/etrij.2020-0120

Katalog-ID:	DOAJ016581741

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ016581741
003	DE-627
005	20230310083346.0
007	cr uuu---uuuuu
008	230226s2020 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.4218/etrij.2020-0120 \|2 doi
035			\|a (DE-627)DOAJ016581741
035			\|a (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a TK5101-6720
050		0	\|a TK7800-8360
100	0		\|a Jong‐Min Lee \|e verfasserin \|4 aut
245	1	0	\|a W‐Band MMIC chipset in 0.1‐μm mHEMT technology
264		1	\|c 2020
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.
650		4	\|a frequency multiplier
650		4	\|a image‐rejection mixer
650		4	\|a lna
650		4	\|a mhemt
650		4	\|a mmic
653		0	\|a Telecommunication
653		0	\|a Electronics
700	0		\|a Woo‐Jin Chang \|e verfasserin \|4 aut
700	0		\|a Dong Min Kang \|e verfasserin \|4 aut
700	0		\|a Byoung‐Gue Min \|e verfasserin \|4 aut
700	0		\|a Hyung Sup Yoon \|e verfasserin \|4 aut
700	0		\|a Sung‐Jae Chang \|e verfasserin \|4 aut
700	0		\|a Hyun‐Wook Jung \|e verfasserin \|4 aut
700	0		\|a Wansik Kim \|e verfasserin \|4 aut
700	0		\|a Jooyong Jung \|e verfasserin \|4 aut
700	0		\|a Jongpil Kim \|e verfasserin \|4 aut
700	0		\|a Mihui Seo \|e verfasserin \|4 aut
700	0		\|a Sosu Kim \|e verfasserin \|4 aut
773	0	8	\|i In \|t ETRI Journal \|d Electronics and Telecommunications Research Institute (ETRI), 2003 \|g 42(2020), 4, Seite 549-561 \|w (DE-627)369554647 \|w (DE-600)2119239-X \|x 22337326 \|7 nnns
773	1	8	\|g volume:42 \|g year:2020 \|g number:4 \|g pages:549-561
856	4	0	\|u https://doi.org/10.4218/etrij.2020-0120 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 \|z kostenfrei
856	4	0	\|u https://doi.org/10.4218/etrij.2020-0120 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/1225-6463 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 42 \|j 2020 \|e 4 \|h 549-561

Indexfelder

author_variant	j l jl w c wc d m k dmk b m bm h s y hsy s c sc h j hj w k wk j j jj j k jk m s ms s k sk
matchkey_str	article:22337326:2020----::bnmicistn1met
hierarchy_sort_str	2020
callnumber-subject-code	TK
publishDate	2020
allfields	10.4218/etrij.2020-0120 doi (DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93 DE-627 ger DE-627 rakwb eng TK5101-6720 TK7800-8360 Jong‐Min Lee verfasserin aut W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics Woo‐Jin Chang verfasserin aut Dong Min Kang verfasserin aut Byoung‐Gue Min verfasserin aut Hyung Sup Yoon verfasserin aut Sung‐Jae Chang verfasserin aut Hyun‐Wook Jung verfasserin aut Wansik Kim verfasserin aut Jooyong Jung verfasserin aut Jongpil Kim verfasserin aut Mihui Seo verfasserin aut Sosu Kim verfasserin aut In ETRI Journal Electronics and Telecommunications Research Institute (ETRI), 2003 42(2020), 4, Seite 549-561 (DE-627)369554647 (DE-600)2119239-X 22337326 nnns volume:42 year:2020 number:4 pages:549-561 https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 kostenfrei https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/toc/1225-6463 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 42 2020 4 549-561
spelling	10.4218/etrij.2020-0120 doi (DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93 DE-627 ger DE-627 rakwb eng TK5101-6720 TK7800-8360 Jong‐Min Lee verfasserin aut W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics Woo‐Jin Chang verfasserin aut Dong Min Kang verfasserin aut Byoung‐Gue Min verfasserin aut Hyung Sup Yoon verfasserin aut Sung‐Jae Chang verfasserin aut Hyun‐Wook Jung verfasserin aut Wansik Kim verfasserin aut Jooyong Jung verfasserin aut Jongpil Kim verfasserin aut Mihui Seo verfasserin aut Sosu Kim verfasserin aut In ETRI Journal Electronics and Telecommunications Research Institute (ETRI), 2003 42(2020), 4, Seite 549-561 (DE-627)369554647 (DE-600)2119239-X 22337326 nnns volume:42 year:2020 number:4 pages:549-561 https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 kostenfrei https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/toc/1225-6463 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 42 2020 4 549-561
allfields_unstemmed	10.4218/etrij.2020-0120 doi (DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93 DE-627 ger DE-627 rakwb eng TK5101-6720 TK7800-8360 Jong‐Min Lee verfasserin aut W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics Woo‐Jin Chang verfasserin aut Dong Min Kang verfasserin aut Byoung‐Gue Min verfasserin aut Hyung Sup Yoon verfasserin aut Sung‐Jae Chang verfasserin aut Hyun‐Wook Jung verfasserin aut Wansik Kim verfasserin aut Jooyong Jung verfasserin aut Jongpil Kim verfasserin aut Mihui Seo verfasserin aut Sosu Kim verfasserin aut In ETRI Journal Electronics and Telecommunications Research Institute (ETRI), 2003 42(2020), 4, Seite 549-561 (DE-627)369554647 (DE-600)2119239-X 22337326 nnns volume:42 year:2020 number:4 pages:549-561 https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 kostenfrei https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/toc/1225-6463 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 42 2020 4 549-561
allfieldsGer	10.4218/etrij.2020-0120 doi (DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93 DE-627 ger DE-627 rakwb eng TK5101-6720 TK7800-8360 Jong‐Min Lee verfasserin aut W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics Woo‐Jin Chang verfasserin aut Dong Min Kang verfasserin aut Byoung‐Gue Min verfasserin aut Hyung Sup Yoon verfasserin aut Sung‐Jae Chang verfasserin aut Hyun‐Wook Jung verfasserin aut Wansik Kim verfasserin aut Jooyong Jung verfasserin aut Jongpil Kim verfasserin aut Mihui Seo verfasserin aut Sosu Kim verfasserin aut In ETRI Journal Electronics and Telecommunications Research Institute (ETRI), 2003 42(2020), 4, Seite 549-561 (DE-627)369554647 (DE-600)2119239-X 22337326 nnns volume:42 year:2020 number:4 pages:549-561 https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 kostenfrei https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/toc/1225-6463 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 42 2020 4 549-561
allfieldsSound	10.4218/etrij.2020-0120 doi (DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93 DE-627 ger DE-627 rakwb eng TK5101-6720 TK7800-8360 Jong‐Min Lee verfasserin aut W‐Band MMIC chipset in 0.1‐μm mHEMT technology 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics Woo‐Jin Chang verfasserin aut Dong Min Kang verfasserin aut Byoung‐Gue Min verfasserin aut Hyung Sup Yoon verfasserin aut Sung‐Jae Chang verfasserin aut Hyun‐Wook Jung verfasserin aut Wansik Kim verfasserin aut Jooyong Jung verfasserin aut Jongpil Kim verfasserin aut Mihui Seo verfasserin aut Sosu Kim verfasserin aut In ETRI Journal Electronics and Telecommunications Research Institute (ETRI), 2003 42(2020), 4, Seite 549-561 (DE-627)369554647 (DE-600)2119239-X 22337326 nnns volume:42 year:2020 number:4 pages:549-561 https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 kostenfrei https://doi.org/10.4218/etrij.2020-0120 kostenfrei https://doaj.org/toc/1225-6463 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 42 2020 4 549-561
language	English
source	In ETRI Journal 42(2020), 4, Seite 549-561 volume:42 year:2020 number:4 pages:549-561
sourceStr	In ETRI Journal 42(2020), 4, Seite 549-561 volume:42 year:2020 number:4 pages:549-561
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	frequency multiplier image‐rejection mixer lna mhemt mmic Telecommunication Electronics
isfreeaccess_bool	true
container_title	ETRI Journal
authorswithroles_txt_mv	Jong‐Min Lee @@aut@@ Woo‐Jin Chang @@aut@@ Dong Min Kang @@aut@@ Byoung‐Gue Min @@aut@@ Hyung Sup Yoon @@aut@@ Sung‐Jae Chang @@aut@@ Hyun‐Wook Jung @@aut@@ Wansik Kim @@aut@@ Jooyong Jung @@aut@@ Jongpil Kim @@aut@@ Mihui Seo @@aut@@ Sosu Kim @@aut@@
publishDateDaySort_date	2020-01-01T00:00:00Z
hierarchy_top_id	369554647
id	DOAJ016581741
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ016581741</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310083346.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.4218/etrij.2020-0120</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ016581741</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK5101-6720</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7800-8360</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jong‐Min Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">W‐Band MMIC chipset in 0.1‐μm mHEMT technology</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency multiplier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">image‐rejection mixer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">lna</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mhemt</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mmic</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Telecommunication</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electronics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Woo‐Jin Chang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Dong Min Kang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byoung‐Gue Min</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hyung Sup Yoon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sung‐Jae Chang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hyun‐Wook Jung</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wansik Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jooyong Jung</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jongpil Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mihui Seo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sosu Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">ETRI Journal</subfield><subfield code="d">Electronics and Telecommunications Research Institute (ETRI), 2003</subfield><subfield code="g">42(2020), 4, Seite 549-561</subfield><subfield code="w">(DE-627)369554647</subfield><subfield code="w">(DE-600)2119239-X</subfield><subfield code="x">22337326</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:42</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:549-561</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.4218/etrij.2020-0120</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.4218/etrij.2020-0120</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1225-6463</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">42</subfield><subfield code="j">2020</subfield><subfield code="e">4</subfield><subfield code="h">549-561</subfield></datafield></record></collection>
callnumber-first	T - Technology
author	Jong‐Min Lee
spellingShingle	Jong‐Min Lee misc TK5101-6720 misc TK7800-8360 misc frequency multiplier misc image‐rejection mixer misc lna misc mhemt misc mmic misc Telecommunication misc Electronics W‐Band MMIC chipset in 0.1‐μm mHEMT technology
authorStr	Jong‐Min Lee
ppnlink_with_tag_str_mv	@@773@@(DE-627)369554647
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	TK5101-6720
illustrated	Not Illustrated
issn	22337326
topic_title	TK5101-6720 TK7800-8360 W‐Band MMIC chipset in 0.1‐μm mHEMT technology frequency multiplier image‐rejection mixer lna mhemt mmic
topic	misc TK5101-6720 misc TK7800-8360 misc frequency multiplier misc image‐rejection mixer misc lna misc mhemt misc mmic misc Telecommunication misc Electronics
topic_unstemmed	misc TK5101-6720 misc TK7800-8360 misc frequency multiplier misc image‐rejection mixer misc lna misc mhemt misc mmic misc Telecommunication misc Electronics
topic_browse	misc TK5101-6720 misc TK7800-8360 misc frequency multiplier misc image‐rejection mixer misc lna misc mhemt misc mmic misc Telecommunication misc Electronics
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	ETRI Journal
hierarchy_parent_id	369554647
hierarchy_top_title	ETRI Journal
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)369554647 (DE-600)2119239-X
title	W‐Band MMIC chipset in 0.1‐μm mHEMT technology
ctrlnum	(DE-627)DOAJ016581741 (DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93
title_full	W‐Band MMIC chipset in 0.1‐μm mHEMT technology
author_sort	Jong‐Min Lee
journal	ETRI Journal
journalStr	ETRI Journal
callnumber-first-code	T
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2020
contenttype_str_mv	txt
container_start_page	549
author_browse	Jong‐Min Lee Woo‐Jin Chang Dong Min Kang Byoung‐Gue Min Hyung Sup Yoon Sung‐Jae Chang Hyun‐Wook Jung Wansik Kim Jooyong Jung Jongpil Kim Mihui Seo Sosu Kim
container_volume	42
class	TK5101-6720 TK7800-8360
format_se	Elektronische Aufsätze
author-letter	Jong‐Min Lee
doi_str_mv	10.4218/etrij.2020-0120
author2-role	verfasserin
title_sort	w‐band mmic chipset in 0.1‐μm mhemt technology
callnumber	TK5101-6720
title_auth	W‐Band MMIC chipset in 0.1‐μm mHEMT technology
abstract	We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.
abstractGer	We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.
abstract_unstemmed	We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	4
title_short	W‐Band MMIC chipset in 0.1‐μm mHEMT technology
url	https://doi.org/10.4218/etrij.2020-0120 https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93 https://doaj.org/toc/1225-6463
remote_bool	true
author2	Woo‐Jin Chang Dong Min Kang Byoung‐Gue Min Hyung Sup Yoon Sung‐Jae Chang Hyun‐Wook Jung Wansik Kim Jooyong Jung Jongpil Kim Mihui Seo Sosu Kim
author2Str	Woo‐Jin Chang Dong Min Kang Byoung‐Gue Min Hyung Sup Yoon Sung‐Jae Chang Hyun‐Wook Jung Wansik Kim Jooyong Jung Jongpil Kim Mihui Seo Sosu Kim
ppnlink	369554647
callnumber-subject	TK - Electrical and Nuclear Engineering
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.4218/etrij.2020-0120
callnumber-a	TK5101-6720
up_date	2024-07-03T21:52:55.514Z
_version_	1803596412240265216
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ016581741</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310083346.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.4218/etrij.2020-0120</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ016581741</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ71feb69d343a47ecbb3a7b73b69b0f93</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK5101-6720</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7800-8360</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jong‐Min Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">W‐Band MMIC chipset in 0.1‐μm mHEMT technology</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency multiplier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">image‐rejection mixer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">lna</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mhemt</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mmic</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Telecommunication</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electronics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Woo‐Jin Chang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Dong Min Kang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byoung‐Gue Min</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hyung Sup Yoon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sung‐Jae Chang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hyun‐Wook Jung</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wansik Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jooyong Jung</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jongpil Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mihui Seo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sosu Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">ETRI Journal</subfield><subfield code="d">Electronics and Telecommunications Research Institute (ETRI), 2003</subfield><subfield code="g">42(2020), 4, Seite 549-561</subfield><subfield code="w">(DE-627)369554647</subfield><subfield code="w">(DE-600)2119239-X</subfield><subfield code="x">22337326</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:42</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:549-561</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.4218/etrij.2020-0120</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.4218/etrij.2020-0120</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1225-6463</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">42</subfield><subfield code="j">2020</subfield><subfield code="e">4</subfield><subfield code="h">549-561</subfield></datafield></record></collection>
score	7.3984594

Nicht das Richtige dabei?

Schreiben Sie uns!

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?