Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells

Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconduct...
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Autor*in:	Tao Ling [verfasserIn] Xiaoping Zou [verfasserIn] Jin Cheng [verfasserIn] Ying Yang [verfasserIn] Haiyan Ren [verfasserIn] Dan Chen [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	solar cell doping of K+ surface morphology perovskite thin film crystallization speed semiconductor properties

Übergeordnetes Werk:	In: Materials - MDPI AG, 2009, 11(2018), 9, p 1605
Übergeordnetes Werk:	volume:11 ; year:2018 ; number:9, p 1605

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/ma11091605

Katalog-ID:	DOAJ016973666

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520			\|a Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs.
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spelling	10.3390/ma11091605 doi (DE-627)DOAJ016973666 (DE-599)DOAJ6d729945283d4de68224ec30fb42808e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Tao Ling verfasserin aut Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs. solar cell doping of K+ surface morphology perovskite thin film crystallization speed semiconductor properties Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Xiaoping Zou verfasserin aut Jin Cheng verfasserin aut Ying Yang verfasserin aut Haiyan Ren verfasserin aut Dan Chen verfasserin aut In Materials MDPI AG, 2009 11(2018), 9, p 1605 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:11 year:2018 number:9, p 1605 https://doi.org/10.3390/ma11091605 kostenfrei https://doaj.org/article/6d729945283d4de68224ec30fb42808e kostenfrei http://www.mdpi.com/1996-1944/11/9/1605 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2018 9, p 1605
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allfieldsSound	10.3390/ma11091605 doi (DE-627)DOAJ016973666 (DE-599)DOAJ6d729945283d4de68224ec30fb42808e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Tao Ling verfasserin aut Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs. solar cell doping of K+ surface morphology perovskite thin film crystallization speed semiconductor properties Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Xiaoping Zou verfasserin aut Jin Cheng verfasserin aut Ying Yang verfasserin aut Haiyan Ren verfasserin aut Dan Chen verfasserin aut In Materials MDPI AG, 2009 11(2018), 9, p 1605 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:11 year:2018 number:9, p 1605 https://doi.org/10.3390/ma11091605 kostenfrei https://doaj.org/article/6d729945283d4de68224ec30fb42808e kostenfrei http://www.mdpi.com/1996-1944/11/9/1605 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2018 9, p 1605
language	English
source	In Materials 11(2018), 9, p 1605 volume:11 year:2018 number:9, p 1605
sourceStr	In Materials 11(2018), 9, p 1605 volume:11 year:2018 number:9, p 1605
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topic_facet	solar cell doping of K+ surface morphology perovskite thin film crystallization speed semiconductor properties Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics
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container_title	Materials
authorswithroles_txt_mv	Tao Ling @@aut@@ Xiaoping Zou @@aut@@ Jin Cheng @@aut@@ Ying Yang @@aut@@ Haiyan Ren @@aut@@ Dan Chen @@aut@@
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callnumber-first	T - Technology
author	Tao Ling
spellingShingle	Tao Ling misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc solar cell misc doping of K+ misc surface morphology misc perovskite thin film misc crystallization speed misc semiconductor properties misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells
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topic_title	TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells solar cell doping of K+ surface morphology perovskite thin film crystallization speed semiconductor properties
topic	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc solar cell misc doping of K+ misc surface morphology misc perovskite thin film misc crystallization speed misc semiconductor properties misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
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title	Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells
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title_full	Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells
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title_sort	modulating surface morphology related to crystallization speed of perovskite grain and semiconductor properties of optical absorber layer under controlled doping of potassium ions for solar cells
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title_auth	Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells
abstract	Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs.
abstractGer	Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs.
abstract_unstemmed	Perovskite thin films with excellent optical semiconductor and crystallization properties and superior surface morphology are normally considered to be vital to perovskite solar cells (PSCs). In this paper, we systematically survey the process of modulating surface morphology and optical semiconductor and crystallization properties of methylammonium lead iodide film by controlling doping of K+ for PSC prepared in air and propose the mechanism of large K+-doped perovskite grain formation related to crystallization speed. The increase in the crystallization speed leads to the production of large grains without localized-solvent-vapor (LSV) pores via moderate doping of K+, and the exorbitant crystallization speed induces super large grains with LSV pores via excessive doping of K+. Furthermore, the semiconductor properties (absorption band edge wavelength, PL emission peak wavelength, energy band gap) of perovskite film can be significantly tuned by controlled doping of K+. The investigation of the detailed process of modulating surface morphology and semiconductor properties of perovskite thin film by controlled doping of K+ may provide guidance and pave the way for superior component design of absorption materials for cost-efficient PSCs.
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title_short	Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells
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up_date	2024-07-03T23:48:49.452Z
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Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells

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