FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES

In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer...
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Autor*in:	Afifah Rosyidah [verfasserIn] Djulia Onggo [verfasserIn] Khairurrijal Khairurrijal [verfasserIn] Ismunandar Ismunandar [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Übergeordnetes Werk:	In: Indonesian Journal of Chemistry - Department of Chemistry, Universitas Gadjah Mada, 2017, 9(2010), 3, Seite 398-403
Übergeordnetes Werk:	volume:9 ; year:2010 ; number:3 ; pages:398-403

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.22146/ijc.21505

Katalog-ID:	DOAJ019863942

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245	1	0	\|a FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
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520			\|a In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15
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author_variant	a r ar d o do k k kk i i ii
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allfields	10.22146/ijc.21505 doi (DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66 DE-627 ger DE-627 rakwb eng QD1-999 Afifah Rosyidah verfasserin aut FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15 Chemistry Djulia Onggo verfasserin aut Khairurrijal Khairurrijal verfasserin aut Ismunandar Ismunandar verfasserin aut In Indonesian Journal of Chemistry Department of Chemistry, Universitas Gadjah Mada, 2017 9(2010), 3, Seite 398-403 (DE-627)176061114X 24601578 nnns volume:9 year:2010 number:3 pages:398-403 https://doi.org/10.22146/ijc.21505 kostenfrei https://doaj.org/article/42bbc34107dd47f1b5709ea9274a3b66 kostenfrei https://jurnal.ugm.ac.id/ijc/article/view/21505 kostenfrei https://doaj.org/toc/1411-9420 Journal toc kostenfrei https://doaj.org/toc/2460-1578 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2010 3 398-403
spelling	10.22146/ijc.21505 doi (DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66 DE-627 ger DE-627 rakwb eng QD1-999 Afifah Rosyidah verfasserin aut FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15 Chemistry Djulia Onggo verfasserin aut Khairurrijal Khairurrijal verfasserin aut Ismunandar Ismunandar verfasserin aut In Indonesian Journal of Chemistry Department of Chemistry, Universitas Gadjah Mada, 2017 9(2010), 3, Seite 398-403 (DE-627)176061114X 24601578 nnns volume:9 year:2010 number:3 pages:398-403 https://doi.org/10.22146/ijc.21505 kostenfrei https://doaj.org/article/42bbc34107dd47f1b5709ea9274a3b66 kostenfrei https://jurnal.ugm.ac.id/ijc/article/view/21505 kostenfrei https://doaj.org/toc/1411-9420 Journal toc kostenfrei https://doaj.org/toc/2460-1578 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2010 3 398-403
allfields_unstemmed	10.22146/ijc.21505 doi (DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66 DE-627 ger DE-627 rakwb eng QD1-999 Afifah Rosyidah verfasserin aut FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15 Chemistry Djulia Onggo verfasserin aut Khairurrijal Khairurrijal verfasserin aut Ismunandar Ismunandar verfasserin aut In Indonesian Journal of Chemistry Department of Chemistry, Universitas Gadjah Mada, 2017 9(2010), 3, Seite 398-403 (DE-627)176061114X 24601578 nnns volume:9 year:2010 number:3 pages:398-403 https://doi.org/10.22146/ijc.21505 kostenfrei https://doaj.org/article/42bbc34107dd47f1b5709ea9274a3b66 kostenfrei https://jurnal.ugm.ac.id/ijc/article/view/21505 kostenfrei https://doaj.org/toc/1411-9420 Journal toc kostenfrei https://doaj.org/toc/2460-1578 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2010 3 398-403
allfieldsGer	10.22146/ijc.21505 doi (DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66 DE-627 ger DE-627 rakwb eng QD1-999 Afifah Rosyidah verfasserin aut FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15 Chemistry Djulia Onggo verfasserin aut Khairurrijal Khairurrijal verfasserin aut Ismunandar Ismunandar verfasserin aut In Indonesian Journal of Chemistry Department of Chemistry, Universitas Gadjah Mada, 2017 9(2010), 3, Seite 398-403 (DE-627)176061114X 24601578 nnns volume:9 year:2010 number:3 pages:398-403 https://doi.org/10.22146/ijc.21505 kostenfrei https://doaj.org/article/42bbc34107dd47f1b5709ea9274a3b66 kostenfrei https://jurnal.ugm.ac.id/ijc/article/view/21505 kostenfrei https://doaj.org/toc/1411-9420 Journal toc kostenfrei https://doaj.org/toc/2460-1578 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2010 3 398-403
allfieldsSound	10.22146/ijc.21505 doi (DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66 DE-627 ger DE-627 rakwb eng QD1-999 Afifah Rosyidah verfasserin aut FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15 Chemistry Djulia Onggo verfasserin aut Khairurrijal Khairurrijal verfasserin aut Ismunandar Ismunandar verfasserin aut In Indonesian Journal of Chemistry Department of Chemistry, Universitas Gadjah Mada, 2017 9(2010), 3, Seite 398-403 (DE-627)176061114X 24601578 nnns volume:9 year:2010 number:3 pages:398-403 https://doi.org/10.22146/ijc.21505 kostenfrei https://doaj.org/article/42bbc34107dd47f1b5709ea9274a3b66 kostenfrei https://jurnal.ugm.ac.id/ijc/article/view/21505 kostenfrei https://doaj.org/toc/1411-9420 Journal toc kostenfrei https://doaj.org/toc/2460-1578 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2010 3 398-403
language	English
source	In Indonesian Journal of Chemistry 9(2010), 3, Seite 398-403 volume:9 year:2010 number:3 pages:398-403
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authorswithroles_txt_mv	Afifah Rosyidah @@aut@@ Djulia Onggo @@aut@@ Khairurrijal Khairurrijal @@aut@@ Ismunandar Ismunandar @@aut@@
publishDateDaySort_date	2010-01-01T00:00:00Z
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Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. 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callnumber-first	Q - Science
author	Afifah Rosyidah
spellingShingle	Afifah Rosyidah misc QD1-999 misc Chemistry FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
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topic_title	QD1-999 FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
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title	FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
ctrlnum	(DE-627)DOAJ019863942 (DE-599)DOAJ42bbc34107dd47f1b5709ea9274a3b66
title_full	FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
author_sort	Afifah Rosyidah
journal	Indonesian Journal of Chemistry
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author_browse	Afifah Rosyidah Djulia Onggo Khairurrijal Khairurrijal Ismunandar Ismunandar
container_volume	9
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format_se	Elektronische Aufsätze
author-letter	Afifah Rosyidah
doi_str_mv	10.22146/ijc.21505
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title_sort	ferroelectric properties of babi<sub<4</sub<t<sub<i4</sub<o<sub<15</sub< doped with pb<sup<2+</sup<, al<sup<3+</sup<, ga<sup<3+</sup<, in<sup<3+</sup<, ta<sup<5+</sup< aurivillius phases
callnumber	QD1-999
title_auth	FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
abstract	In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15
abstractGer	In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15
abstract_unstemmed	In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm. Keywords: Aurivillius phase; Rietveld refinement; Ferroelectric properties; BaBi4Ti4O15
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title_short	FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES
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author2	Djulia Onggo Khairurrijal Khairurrijal Ismunandar Ismunandar
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up_date	2024-07-04T01:14:43.075Z
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FERROELECTRIC PROPERTIES OF BaBi<sub<4</sub<T<sub<i4</sub<O<sub<15</sub< DOPED WITH Pb<sup<2+</sup<, Al<sup<3+</sup<, Ga<sup<3+</sup<, In<sup<3+</sup<, Ta<sup<5+</sup< AURIVILLIUS PHASES

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