Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors

In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a sw...
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Autor*in:	Donguk Kim [verfasserIn] Hee Jun Lee [verfasserIn] Tae Jun Yang [verfasserIn] Woo Sik Choi [verfasserIn] Changwook Kim [verfasserIn] Sung-Jin Choi [verfasserIn] Jong-Ho Bae [verfasserIn] Dong Myong Kim [verfasserIn] Sungjun Kim [verfasserIn] Dae Hwan Kim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 12(2022), 20, p 3582
Übergeordnetes Werk:	volume:12 ; year:2022 ; number:20, p 3582

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano12203582

Katalog-ID:	DOAJ021638322

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allfields	10.3390/nano12203582 doi (DE-627)DOAJ021638322 (DE-599)DOAJ14749cd96a504464be18e4499a50e777 DE-627 ger DE-627 rakwb eng QD1-999 Donguk Kim verfasserin aut Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network. neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry Hee Jun Lee verfasserin aut Tae Jun Yang verfasserin aut Woo Sik Choi verfasserin aut Changwook Kim verfasserin aut Sung-Jin Choi verfasserin aut Jong-Ho Bae verfasserin aut Dong Myong Kim verfasserin aut Sungjun Kim verfasserin aut Dae Hwan Kim verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3582 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3582 https://doi.org/10.3390/nano12203582 kostenfrei https://doaj.org/article/14749cd96a504464be18e4499a50e777 kostenfrei https://www.mdpi.com/2079-4991/12/20/3582 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3582
spelling	10.3390/nano12203582 doi (DE-627)DOAJ021638322 (DE-599)DOAJ14749cd96a504464be18e4499a50e777 DE-627 ger DE-627 rakwb eng QD1-999 Donguk Kim verfasserin aut Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network. neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry Hee Jun Lee verfasserin aut Tae Jun Yang verfasserin aut Woo Sik Choi verfasserin aut Changwook Kim verfasserin aut Sung-Jin Choi verfasserin aut Jong-Ho Bae verfasserin aut Dong Myong Kim verfasserin aut Sungjun Kim verfasserin aut Dae Hwan Kim verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3582 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3582 https://doi.org/10.3390/nano12203582 kostenfrei https://doaj.org/article/14749cd96a504464be18e4499a50e777 kostenfrei https://www.mdpi.com/2079-4991/12/20/3582 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3582
allfields_unstemmed	10.3390/nano12203582 doi (DE-627)DOAJ021638322 (DE-599)DOAJ14749cd96a504464be18e4499a50e777 DE-627 ger DE-627 rakwb eng QD1-999 Donguk Kim verfasserin aut Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network. neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry Hee Jun Lee verfasserin aut Tae Jun Yang verfasserin aut Woo Sik Choi verfasserin aut Changwook Kim verfasserin aut Sung-Jin Choi verfasserin aut Jong-Ho Bae verfasserin aut Dong Myong Kim verfasserin aut Sungjun Kim verfasserin aut Dae Hwan Kim verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3582 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3582 https://doi.org/10.3390/nano12203582 kostenfrei https://doaj.org/article/14749cd96a504464be18e4499a50e777 kostenfrei https://www.mdpi.com/2079-4991/12/20/3582 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3582
allfieldsGer	10.3390/nano12203582 doi (DE-627)DOAJ021638322 (DE-599)DOAJ14749cd96a504464be18e4499a50e777 DE-627 ger DE-627 rakwb eng QD1-999 Donguk Kim verfasserin aut Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network. neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry Hee Jun Lee verfasserin aut Tae Jun Yang verfasserin aut Woo Sik Choi verfasserin aut Changwook Kim verfasserin aut Sung-Jin Choi verfasserin aut Jong-Ho Bae verfasserin aut Dong Myong Kim verfasserin aut Sungjun Kim verfasserin aut Dae Hwan Kim verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3582 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3582 https://doi.org/10.3390/nano12203582 kostenfrei https://doaj.org/article/14749cd96a504464be18e4499a50e777 kostenfrei https://www.mdpi.com/2079-4991/12/20/3582 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3582
allfieldsSound	10.3390/nano12203582 doi (DE-627)DOAJ021638322 (DE-599)DOAJ14749cd96a504464be18e4499a50e777 DE-627 ger DE-627 rakwb eng QD1-999 Donguk Kim verfasserin aut Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network. neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry Hee Jun Lee verfasserin aut Tae Jun Yang verfasserin aut Woo Sik Choi verfasserin aut Changwook Kim verfasserin aut Sung-Jin Choi verfasserin aut Jong-Ho Bae verfasserin aut Dong Myong Kim verfasserin aut Sungjun Kim verfasserin aut Dae Hwan Kim verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3582 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3582 https://doi.org/10.3390/nano12203582 kostenfrei https://doaj.org/article/14749cd96a504464be18e4499a50e777 kostenfrei https://www.mdpi.com/2079-4991/12/20/3582 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3582
language	English
source	In Nanomaterials 12(2022), 20, p 3582 volume:12 year:2022 number:20, p 3582
sourceStr	In Nanomaterials 12(2022), 20, p 3582 volume:12 year:2022 number:20, p 3582
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topic_facet	neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation Chemistry
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authorswithroles_txt_mv	Donguk Kim @@aut@@ Hee Jun Lee @@aut@@ Tae Jun Yang @@aut@@ Woo Sik Choi @@aut@@ Changwook Kim @@aut@@ Sung-Jin Choi @@aut@@ Jong-Ho Bae @@aut@@ Dong Myong Kim @@aut@@ Sungjun Kim @@aut@@ Dae Hwan Kim @@aut@@
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callnumber-first	Q - Science
author	Donguk Kim
spellingShingle	Donguk Kim misc QD1-999 misc neuromorphic system misc synaptic device misc annealing misc indium gallium zinc oxide misc neuromorphic simulation misc Chemistry Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors
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topic_title	QD1-999 Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors neuromorphic system synaptic device annealing indium gallium zinc oxide neuromorphic simulation
topic	misc QD1-999 misc neuromorphic system misc synaptic device misc annealing misc indium gallium zinc oxide misc neuromorphic simulation misc Chemistry
topic_unstemmed	misc QD1-999 misc neuromorphic system misc synaptic device misc annealing misc indium gallium zinc oxide misc neuromorphic simulation misc Chemistry
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title	Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors
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title_full	Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors
author_sort	Donguk Kim
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author_browse	Donguk Kim Hee Jun Lee Tae Jun Yang Woo Sik Choi Changwook Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Sungjun Kim Dae Hwan Kim
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title_sort	effect of post-annealing on barrier modulations in pd/igzo/sio<sub<2</sub</p<sup<+</sup<-si memristors
callnumber	QD1-999
title_auth	Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors
abstract	In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.
abstractGer	In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.
abstract_unstemmed	In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.
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container_issue	20, p 3582
title_short	Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors
url	https://doi.org/10.3390/nano12203582 https://doaj.org/article/14749cd96a504464be18e4499a50e777 https://www.mdpi.com/2079-4991/12/20/3582 https://doaj.org/toc/2079-4991
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author2	Hee Jun Lee Tae Jun Yang Woo Sik Choi Changwook Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Sungjun Kim Dae Hwan Kim
author2Str	Hee Jun Lee Tae Jun Yang Woo Sik Choi Changwook Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Sungjun Kim Dae Hwan Kim
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doi_str	10.3390/nano12203582
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up_date	2024-07-03T22:01:27.173Z
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Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub<2</sub</p<sup<+</sup<-Si Memristors

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