Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials

A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium...
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Gespeichert in:

Autor*in:	Dandan Wu [verfasserIn] Chengyong Wang [verfasserIn] Xiaoyue Hu [verfasserIn] Wanglin Chen [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity

Übergeordnetes Werk:	In: Materials & Design - Elsevier, 2019, 225(2023), Seite 111482-
Übergeordnetes Werk:	volume:225 ; year:2023 ; pages:111482-

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1016/j.matdes.2022.111482

Katalog-ID:	DOAJ02495229X

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ02495229X
003	DE-627
005	20230310213351.0
007	cr uuu---uuuuu
008	230226s2023 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.matdes.2022.111482 \|2 doi
035			\|a (DE-627)DOAJ02495229X
035			\|a (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a TA401-492
100	0		\|a Dandan Wu \|e verfasserin \|4 aut
245	1	0	\|a Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
264		1	\|c 2023
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.
650		4	\|a Silicon nitride
650		4	\|a Diamond particle
650		4	\|a Multilayer structure
650		4	\|a Chemical bonding interface
650		4	\|a Thermal conductivity
653		0	\|a Materials of engineering and construction. Mechanics of materials
700	0		\|a Chengyong Wang \|e verfasserin \|4 aut
700	0		\|a Xiaoyue Hu \|e verfasserin \|4 aut
700	0		\|a Wanglin Chen \|e verfasserin \|4 aut
773	0	8	\|i In \|t Materials & Design \|d Elsevier, 2019 \|g 225(2023), Seite 111482- \|w (DE-627)32052857X \|w (DE-600)2015480-X \|x 18734197 \|7 nnns
773	1	8	\|g volume:225 \|g year:2023 \|g pages:111482-
856	4	0	\|u https://doi.org/10.1016/j.matdes.2022.111482 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 \|z kostenfrei
856	4	0	\|u http://www.sciencedirect.com/science/article/pii/S0264127522011054 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/0264-1275 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_165
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 225 \|j 2023 \|h 111482-

Indexfelder

author_variant	d w dw c w cw x h xh w c wc
matchkey_str	article:18734197:2023----::arctoadhrceiainfihyhracnutvs34i
hierarchy_sort_str	2023
callnumber-subject-code	TA
publishDate	2023
allfields	10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482-
spelling	10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482-
allfields_unstemmed	10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482-
allfieldsGer	10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482-
allfieldsSound	10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482-
language	English
source	In Materials & Design 225(2023), Seite 111482- volume:225 year:2023 pages:111482-
sourceStr	In Materials & Design 225(2023), Seite 111482- volume:225 year:2023 pages:111482-
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials
isfreeaccess_bool	true
container_title	Materials & Design
authorswithroles_txt_mv	Dandan Wu @@aut@@ Chengyong Wang @@aut@@ Xiaoyue Hu @@aut@@ Wanglin Chen @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	32052857X
id	DOAJ02495229X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ02495229X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310213351.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.matdes.2022.111482</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ02495229X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401-492</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Dandan Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diamond particle</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multilayer structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical bonding interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermal conductivity</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Materials of engineering and construction. Mechanics of materials</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chengyong Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoyue Hu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wanglin Chen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials & Design</subfield><subfield code="d">Elsevier, 2019</subfield><subfield code="g">225(2023), Seite 111482-</subfield><subfield code="w">(DE-627)32052857X</subfield><subfield code="w">(DE-600)2015480-X</subfield><subfield code="x">18734197</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:225</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:111482-</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.matdes.2022.111482</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/article/pii/S0264127522011054</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/0264-1275</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">225</subfield><subfield code="j">2023</subfield><subfield code="h">111482-</subfield></datafield></record></collection>
callnumber-first	T - Technology
author	Dandan Wu
spellingShingle	Dandan Wu misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
authorStr	Dandan Wu
ppnlink_with_tag_str_mv	@@773@@(DE-627)32052857X
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	TA401-492
illustrated	Not Illustrated
issn	18734197
topic_title	TA401-492 Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity
topic	misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials
topic_unstemmed	misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials
topic_browse	misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Materials & Design
hierarchy_parent_id	32052857X
hierarchy_top_title	Materials & Design
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)32052857X (DE-600)2015480-X
title	Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
ctrlnum	(DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0
title_full	Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
author_sort	Dandan Wu
journal	Materials & Design
journalStr	Materials & Design
callnumber-first-code	T
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2023
contenttype_str_mv	txt
container_start_page	111482
author_browse	Dandan Wu Chengyong Wang Xiaoyue Hu Wanglin Chen
container_volume	225
class	TA401-492
format_se	Elektronische Aufsätze
author-letter	Dandan Wu
doi_str_mv	10.1016/j.matdes.2022.111482
author2-role	verfasserin
title_sort	fabrication and characterization of highly thermal conductive si3n4/diamond composite materials
callnumber	TA401-492
title_auth	Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
abstract	A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.
abstractGer	A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.
abstract_unstemmed	A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700
title_short	Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
url	https://doi.org/10.1016/j.matdes.2022.111482 https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 http://www.sciencedirect.com/science/article/pii/S0264127522011054 https://doaj.org/toc/0264-1275
remote_bool	true
author2	Chengyong Wang Xiaoyue Hu Wanglin Chen
author2Str	Chengyong Wang Xiaoyue Hu Wanglin Chen
ppnlink	32052857X
callnumber-subject	TA - General and Civil Engineering
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1016/j.matdes.2022.111482
callnumber-a	TA401-492
up_date	2024-07-04T01:01:14.487Z
_version_	1803608260073226240
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ02495229X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310213351.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.matdes.2022.111482</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ02495229X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401-492</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Dandan Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diamond particle</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multilayer structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical bonding interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermal conductivity</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Materials of engineering and construction. Mechanics of materials</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chengyong Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoyue Hu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wanglin Chen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials & Design</subfield><subfield code="d">Elsevier, 2019</subfield><subfield code="g">225(2023), Seite 111482-</subfield><subfield code="w">(DE-627)32052857X</subfield><subfield code="w">(DE-600)2015480-X</subfield><subfield code="x">18734197</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:225</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:111482-</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.matdes.2022.111482</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/article/pii/S0264127522011054</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/0264-1275</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">225</subfield><subfield code="j">2023</subfield><subfield code="h">111482-</subfield></datafield></record></collection>
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Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials

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