Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials
A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium...
Ausführliche Beschreibung
Autor*in: |
Dandan Wu [verfasserIn] Chengyong Wang [verfasserIn] Xiaoyue Hu [verfasserIn] Wanglin Chen [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Übergeordnetes Werk: |
In: Materials & Design - Elsevier, 2019, 225(2023), Seite 111482- |
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Übergeordnetes Werk: |
volume:225 ; year:2023 ; pages:111482- |
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DOI / URN: |
10.1016/j.matdes.2022.111482 |
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Katalog-ID: |
DOAJ02495229X |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | DOAJ02495229X | ||
003 | DE-627 | ||
005 | 20230310213351.0 | ||
007 | cr uuu---uuuuu | ||
008 | 230226s2023 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1016/j.matdes.2022.111482 |2 doi | |
035 | |a (DE-627)DOAJ02495229X | ||
035 | |a (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
050 | 0 | |a TA401-492 | |
100 | 0 | |a Dandan Wu |e verfasserin |4 aut | |
245 | 1 | 0 | |a Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
264 | 1 | |c 2023 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. | ||
650 | 4 | |a Silicon nitride | |
650 | 4 | |a Diamond particle | |
650 | 4 | |a Multilayer structure | |
650 | 4 | |a Chemical bonding interface | |
650 | 4 | |a Thermal conductivity | |
653 | 0 | |a Materials of engineering and construction. Mechanics of materials | |
700 | 0 | |a Chengyong Wang |e verfasserin |4 aut | |
700 | 0 | |a Xiaoyue Hu |e verfasserin |4 aut | |
700 | 0 | |a Wanglin Chen |e verfasserin |4 aut | |
773 | 0 | 8 | |i In |t Materials & Design |d Elsevier, 2019 |g 225(2023), Seite 111482- |w (DE-627)32052857X |w (DE-600)2015480-X |x 18734197 |7 nnns |
773 | 1 | 8 | |g volume:225 |g year:2023 |g pages:111482- |
856 | 4 | 0 | |u https://doi.org/10.1016/j.matdes.2022.111482 |z kostenfrei |
856 | 4 | 0 | |u https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 |z kostenfrei |
856 | 4 | 0 | |u http://www.sciencedirect.com/science/article/pii/S0264127522011054 |z kostenfrei |
856 | 4 | 2 | |u https://doaj.org/toc/0264-1275 |y Journal toc |z kostenfrei |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_DOAJ | ||
912 | |a GBV_ILN_11 | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_150 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_165 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_224 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_2001 | ||
912 | |a GBV_ILN_2003 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2007 | ||
912 | |a GBV_ILN_2008 | ||
912 | |a GBV_ILN_2009 | ||
912 | |a GBV_ILN_2010 | ||
912 | |a GBV_ILN_2011 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2015 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_2021 | ||
912 | |a GBV_ILN_2025 | ||
912 | |a GBV_ILN_2026 | ||
912 | |a GBV_ILN_2027 | ||
912 | |a GBV_ILN_2034 | ||
912 | |a GBV_ILN_2044 | ||
912 | |a GBV_ILN_2048 | ||
912 | |a GBV_ILN_2049 | ||
912 | |a GBV_ILN_2050 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2056 | ||
912 | |a GBV_ILN_2059 | ||
912 | |a GBV_ILN_2061 | ||
912 | |a GBV_ILN_2064 | ||
912 | |a GBV_ILN_2088 | ||
912 | |a GBV_ILN_2106 | ||
912 | |a GBV_ILN_2110 | ||
912 | |a GBV_ILN_2112 | ||
912 | |a GBV_ILN_2122 | ||
912 | |a GBV_ILN_2129 | ||
912 | |a GBV_ILN_2143 | ||
912 | |a GBV_ILN_2152 | ||
912 | |a GBV_ILN_2153 | ||
912 | |a GBV_ILN_2190 | ||
912 | |a GBV_ILN_2232 | ||
912 | |a GBV_ILN_2336 | ||
912 | |a GBV_ILN_2470 | ||
912 | |a GBV_ILN_2472 | ||
912 | |a GBV_ILN_2507 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4035 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4242 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4251 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4326 | ||
912 | |a GBV_ILN_4333 | ||
912 | |a GBV_ILN_4334 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4393 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 225 |j 2023 |h 111482- |
author_variant |
d w dw c w cw x h xh w c wc |
---|---|
matchkey_str |
article:18734197:2023----::arctoadhrceiainfihyhracnutvs34i |
hierarchy_sort_str |
2023 |
callnumber-subject-code |
TA |
publishDate |
2023 |
allfields |
10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482- |
spelling |
10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482- |
allfields_unstemmed |
10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482- |
allfieldsGer |
10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482- |
allfieldsSound |
10.1016/j.matdes.2022.111482 doi (DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 DE-627 ger DE-627 rakwb eng TA401-492 Dandan Wu verfasserin aut Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials Chengyong Wang verfasserin aut Xiaoyue Hu verfasserin aut Wanglin Chen verfasserin aut In Materials & Design Elsevier, 2019 225(2023), Seite 111482- (DE-627)32052857X (DE-600)2015480-X 18734197 nnns volume:225 year:2023 pages:111482- https://doi.org/10.1016/j.matdes.2022.111482 kostenfrei https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 kostenfrei http://www.sciencedirect.com/science/article/pii/S0264127522011054 kostenfrei https://doaj.org/toc/0264-1275 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 225 2023 111482- |
language |
English |
source |
In Materials & Design 225(2023), Seite 111482- volume:225 year:2023 pages:111482- |
sourceStr |
In Materials & Design 225(2023), Seite 111482- volume:225 year:2023 pages:111482- |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity Materials of engineering and construction. Mechanics of materials |
isfreeaccess_bool |
true |
container_title |
Materials & Design |
authorswithroles_txt_mv |
Dandan Wu @@aut@@ Chengyong Wang @@aut@@ Xiaoyue Hu @@aut@@ Wanglin Chen @@aut@@ |
publishDateDaySort_date |
2023-01-01T00:00:00Z |
hierarchy_top_id |
32052857X |
id |
DOAJ02495229X |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ02495229X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310213351.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.matdes.2022.111482</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ02495229X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401-492</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Dandan Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diamond particle</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multilayer structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical bonding interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermal conductivity</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Materials of engineering and construction. Mechanics of materials</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chengyong Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoyue Hu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wanglin Chen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials & Design</subfield><subfield code="d">Elsevier, 2019</subfield><subfield code="g">225(2023), Seite 111482-</subfield><subfield code="w">(DE-627)32052857X</subfield><subfield code="w">(DE-600)2015480-X</subfield><subfield code="x">18734197</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:225</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:111482-</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.matdes.2022.111482</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/article/pii/S0264127522011054</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/0264-1275</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">225</subfield><subfield code="j">2023</subfield><subfield code="h">111482-</subfield></datafield></record></collection>
|
callnumber-first |
T - Technology |
author |
Dandan Wu |
spellingShingle |
Dandan Wu misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
authorStr |
Dandan Wu |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)32052857X |
format |
electronic Article |
delete_txt_mv |
keep |
author_role |
aut aut aut aut |
collection |
DOAJ |
remote_str |
true |
callnumber-label |
TA401-492 |
illustrated |
Not Illustrated |
issn |
18734197 |
topic_title |
TA401-492 Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials Silicon nitride Diamond particle Multilayer structure Chemical bonding interface Thermal conductivity |
topic |
misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials |
topic_unstemmed |
misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials |
topic_browse |
misc TA401-492 misc Silicon nitride misc Diamond particle misc Multilayer structure misc Chemical bonding interface misc Thermal conductivity misc Materials of engineering and construction. Mechanics of materials |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
Materials & Design |
hierarchy_parent_id |
32052857X |
hierarchy_top_title |
Materials & Design |
isfreeaccess_txt |
true |
familylinks_str_mv |
(DE-627)32052857X (DE-600)2015480-X |
title |
Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
ctrlnum |
(DE-627)DOAJ02495229X (DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0 |
title_full |
Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
author_sort |
Dandan Wu |
journal |
Materials & Design |
journalStr |
Materials & Design |
callnumber-first-code |
T |
lang_code |
eng |
isOA_bool |
true |
recordtype |
marc |
publishDateSort |
2023 |
contenttype_str_mv |
txt |
container_start_page |
111482 |
author_browse |
Dandan Wu Chengyong Wang Xiaoyue Hu Wanglin Chen |
container_volume |
225 |
class |
TA401-492 |
format_se |
Elektronische Aufsätze |
author-letter |
Dandan Wu |
doi_str_mv |
10.1016/j.matdes.2022.111482 |
author2-role |
verfasserin |
title_sort |
fabrication and characterization of highly thermal conductive si3n4/diamond composite materials |
callnumber |
TA401-492 |
title_auth |
Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
abstract |
A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. |
abstractGer |
A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. |
abstract_unstemmed |
A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 |
title_short |
Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials |
url |
https://doi.org/10.1016/j.matdes.2022.111482 https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0 http://www.sciencedirect.com/science/article/pii/S0264127522011054 https://doaj.org/toc/0264-1275 |
remote_bool |
true |
author2 |
Chengyong Wang Xiaoyue Hu Wanglin Chen |
author2Str |
Chengyong Wang Xiaoyue Hu Wanglin Chen |
ppnlink |
32052857X |
callnumber-subject |
TA - General and Civil Engineering |
mediatype_str_mv |
c |
isOA_txt |
true |
hochschulschrift_bool |
false |
doi_str |
10.1016/j.matdes.2022.111482 |
callnumber-a |
TA401-492 |
up_date |
2024-07-04T01:01:14.487Z |
_version_ |
1803608260073226240 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ02495229X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230310213351.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.matdes.2022.111482</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ02495229X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbd4d0d4d5fa44c26ad7bd4052c706be0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401-492</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Dandan Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication and characterization of highly thermal conductive Si3N4/diamond composite materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A novel composite materials using silicon nitride (Si3N4) as the substrate and diamond particles as the reinforcement phase were developed to increase both thermal conductivity and mechanical properties. The Ti coating on the surfaces of the diamond particles facilitated the formation of a titanium carbonitride (TiCiN1-i) interface between the two constituents during sintering, creating a strong bonding for high thermal conduction at the diamond-Si3N4 interface and inhibiting the graphitization of diamond during the sintering process. Furthermore, a sandwiched material design was made whereby Si3N4 and Si3N4/Ti-coated diamond layers were stacked alternately to endow the composites with a directional heat conduction characteristic. The thermal conductivity of the fabricated Si3N4/diamond composites increased by up to 272.87 % compared to that of commercially available Si3N4, making them excellent candidates for thermal management materials required in high-performance electronic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diamond particle</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Multilayer structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical bonding interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermal conductivity</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Materials of engineering and construction. Mechanics of materials</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chengyong Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoyue Hu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wanglin Chen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials & Design</subfield><subfield code="d">Elsevier, 2019</subfield><subfield code="g">225(2023), Seite 111482-</subfield><subfield code="w">(DE-627)32052857X</subfield><subfield code="w">(DE-600)2015480-X</subfield><subfield code="x">18734197</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:225</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:111482-</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.matdes.2022.111482</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bd4d0d4d5fa44c26ad7bd4052c706be0</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/article/pii/S0264127522011054</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/0264-1275</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">225</subfield><subfield code="j">2023</subfield><subfield code="h">111482-</subfield></datafield></record></collection>
|
score |
7.4014435 |