Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful...
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Autor*in:	Chin-An Hsieh [verfasserIn] Chia-Ming Tsai [verfasserIn] Bing-Yue Tsui [verfasserIn] Bo-Jen Hsiao [verfasserIn] Sheng-Di Lin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	single-photon avalanche diode (spad) photon-detection probability cmos technology

Übergeordnetes Werk:	In: Sensors - MDPI AG, 2003, 20(2020), 2, p 436
Übergeordnetes Werk:	volume:20 ; year:2020 ; number:2, p 436

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/s20020436

Katalog-ID:	DOAJ025223992

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allfieldsSound	10.3390/s20020436 doi (DE-627)DOAJ025223992 (DE-599)DOAJ8135590d939142c4bc263f57feb4aaf1 DE-627 ger DE-627 rakwb eng TP1-1185 Chin-An Hsieh verfasserin aut Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication. single-photon avalanche diode (spad) photon-detection probability cmos technology Chemical technology Chia-Ming Tsai verfasserin aut Bing-Yue Tsui verfasserin aut Bo-Jen Hsiao verfasserin aut Sheng-Di Lin verfasserin aut In Sensors MDPI AG, 2003 20(2020), 2, p 436 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:20 year:2020 number:2, p 436 https://doi.org/10.3390/s20020436 kostenfrei https://doaj.org/article/8135590d939142c4bc263f57feb4aaf1 kostenfrei https://www.mdpi.com/1424-8220/20/2/436 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 20 2020 2, p 436
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source	In Sensors 20(2020), 2, p 436 volume:20 year:2020 number:2, p 436
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institution	findex.gbv.de
topic_facet	single-photon avalanche diode (spad) photon-detection probability cmos technology Chemical technology
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authorswithroles_txt_mv	Chin-An Hsieh @@aut@@ Chia-Ming Tsai @@aut@@ Bing-Yue Tsui @@aut@@ Bo-Jen Hsiao @@aut@@ Sheng-Di Lin @@aut@@
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callnumber-first	T - Technology
author	Chin-An Hsieh
spellingShingle	Chin-An Hsieh misc TP1-1185 misc single-photon avalanche diode (spad) misc photon-detection probability misc cmos technology misc Chemical technology Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
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topic_title	TP1-1185 Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes single-photon avalanche diode (spad) photon-detection probability cmos technology
topic	misc TP1-1185 misc single-photon avalanche diode (spad) misc photon-detection probability misc cmos technology misc Chemical technology
topic_unstemmed	misc TP1-1185 misc single-photon avalanche diode (spad) misc photon-detection probability misc cmos technology misc Chemical technology
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title	Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
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title_full	Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
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title_sort	photon-detection-probability simulation method for cmos single-photon avalanche diodes
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title_auth	Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
abstract	Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.
abstractGer	Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.
abstract_unstemmed	Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.
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title_short	Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
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