Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages...
Ausführliche Beschreibung
Autor*in: |
Stefano Lai [verfasserIn] Fabrizio Antonio Viola [verfasserIn] Piero Cosseddu [verfasserIn] Annalisa Bonfiglio [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2018 |
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Übergeordnetes Werk: |
In: Sensors - MDPI AG, 2003, 18(2018), 3, p 688 |
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Übergeordnetes Werk: |
volume:18 ; year:2018 ; number:3, p 688 |
Links: |
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DOI / URN: |
10.3390/s18030688 |
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Katalog-ID: |
DOAJ025433350 |
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10.3390/s18030688 doi (DE-627)DOAJ025433350 (DE-599)DOAJc57f5d6b281e4ef2b67bb7481948ae03 DE-627 ger DE-627 rakwb eng TP1-1185 Stefano Lai verfasserin aut Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. inkjet printing chemical vapor deposition OTFTs temperature sensing pressure sensing Chemical technology Fabrizio Antonio Viola verfasserin aut Piero Cosseddu verfasserin aut Annalisa Bonfiglio verfasserin aut In Sensors MDPI AG, 2003 18(2018), 3, p 688 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:18 year:2018 number:3, p 688 https://doi.org/10.3390/s18030688 kostenfrei https://doaj.org/article/c57f5d6b281e4ef2b67bb7481948ae03 kostenfrei http://www.mdpi.com/1424-8220/18/3/688 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2018 3, p 688 |
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10.3390/s18030688 doi (DE-627)DOAJ025433350 (DE-599)DOAJc57f5d6b281e4ef2b67bb7481948ae03 DE-627 ger DE-627 rakwb eng TP1-1185 Stefano Lai verfasserin aut Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. inkjet printing chemical vapor deposition OTFTs temperature sensing pressure sensing Chemical technology Fabrizio Antonio Viola verfasserin aut Piero Cosseddu verfasserin aut Annalisa Bonfiglio verfasserin aut In Sensors MDPI AG, 2003 18(2018), 3, p 688 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:18 year:2018 number:3, p 688 https://doi.org/10.3390/s18030688 kostenfrei https://doaj.org/article/c57f5d6b281e4ef2b67bb7481948ae03 kostenfrei http://www.mdpi.com/1424-8220/18/3/688 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2018 3, p 688 |
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10.3390/s18030688 doi (DE-627)DOAJ025433350 (DE-599)DOAJc57f5d6b281e4ef2b67bb7481948ae03 DE-627 ger DE-627 rakwb eng TP1-1185 Stefano Lai verfasserin aut Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. inkjet printing chemical vapor deposition OTFTs temperature sensing pressure sensing Chemical technology Fabrizio Antonio Viola verfasserin aut Piero Cosseddu verfasserin aut Annalisa Bonfiglio verfasserin aut In Sensors MDPI AG, 2003 18(2018), 3, p 688 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:18 year:2018 number:3, p 688 https://doi.org/10.3390/s18030688 kostenfrei https://doaj.org/article/c57f5d6b281e4ef2b67bb7481948ae03 kostenfrei http://www.mdpi.com/1424-8220/18/3/688 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2018 3, p 688 |
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10.3390/s18030688 doi (DE-627)DOAJ025433350 (DE-599)DOAJc57f5d6b281e4ef2b67bb7481948ae03 DE-627 ger DE-627 rakwb eng TP1-1185 Stefano Lai verfasserin aut Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. inkjet printing chemical vapor deposition OTFTs temperature sensing pressure sensing Chemical technology Fabrizio Antonio Viola verfasserin aut Piero Cosseddu verfasserin aut Annalisa Bonfiglio verfasserin aut In Sensors MDPI AG, 2003 18(2018), 3, p 688 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:18 year:2018 number:3, p 688 https://doi.org/10.3390/s18030688 kostenfrei https://doaj.org/article/c57f5d6b281e4ef2b67bb7481948ae03 kostenfrei http://www.mdpi.com/1424-8220/18/3/688 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2018 3, p 688 |
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10.3390/s18030688 doi (DE-627)DOAJ025433350 (DE-599)DOAJc57f5d6b281e4ef2b67bb7481948ae03 DE-627 ger DE-627 rakwb eng TP1-1185 Stefano Lai verfasserin aut Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. inkjet printing chemical vapor deposition OTFTs temperature sensing pressure sensing Chemical technology Fabrizio Antonio Viola verfasserin aut Piero Cosseddu verfasserin aut Annalisa Bonfiglio verfasserin aut In Sensors MDPI AG, 2003 18(2018), 3, p 688 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:18 year:2018 number:3, p 688 https://doi.org/10.3390/s18030688 kostenfrei https://doaj.org/article/c57f5d6b281e4ef2b67bb7481948ae03 kostenfrei http://www.mdpi.com/1424-8220/18/3/688 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2018 3, p 688 |
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Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates |
abstract |
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. |
abstractGer |
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. |
abstract_unstemmed |
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms. |
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