Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thi...
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Autor*in:	Zhongming Zhang [verfasserIn] Michael D. Aspinall [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4

Übergeordnetes Werk:	In: Sensors - MDPI AG, 2003, 21(2021), 23, p 7930
Übergeordnetes Werk:	volume:21 ; year:2021 ; number:23, p 7930

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/s21237930

Katalog-ID:	DOAJ025735055

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allfields	10.3390/s21237930 doi (DE-627)DOAJ025735055 (DE-599)DOAJ1e0a192dd9374bf7b0d8e8cb751ea068 DE-627 ger DE-627 rakwb eng TP1-1185 Zhongming Zhang verfasserin aut Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4 Chemical technology Michael D. Aspinall verfasserin aut In Sensors MDPI AG, 2003 21(2021), 23, p 7930 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:21 year:2021 number:23, p 7930 https://doi.org/10.3390/s21237930 kostenfrei https://doaj.org/article/1e0a192dd9374bf7b0d8e8cb751ea068 kostenfrei https://www.mdpi.com/1424-8220/21/23/7930 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 21 2021 23, p 7930
spelling	10.3390/s21237930 doi (DE-627)DOAJ025735055 (DE-599)DOAJ1e0a192dd9374bf7b0d8e8cb751ea068 DE-627 ger DE-627 rakwb eng TP1-1185 Zhongming Zhang verfasserin aut Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4 Chemical technology Michael D. Aspinall verfasserin aut In Sensors MDPI AG, 2003 21(2021), 23, p 7930 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:21 year:2021 number:23, p 7930 https://doi.org/10.3390/s21237930 kostenfrei https://doaj.org/article/1e0a192dd9374bf7b0d8e8cb751ea068 kostenfrei https://www.mdpi.com/1424-8220/21/23/7930 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 21 2021 23, p 7930
allfields_unstemmed	10.3390/s21237930 doi (DE-627)DOAJ025735055 (DE-599)DOAJ1e0a192dd9374bf7b0d8e8cb751ea068 DE-627 ger DE-627 rakwb eng TP1-1185 Zhongming Zhang verfasserin aut Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4 Chemical technology Michael D. Aspinall verfasserin aut In Sensors MDPI AG, 2003 21(2021), 23, p 7930 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:21 year:2021 number:23, p 7930 https://doi.org/10.3390/s21237930 kostenfrei https://doaj.org/article/1e0a192dd9374bf7b0d8e8cb751ea068 kostenfrei https://www.mdpi.com/1424-8220/21/23/7930 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 21 2021 23, p 7930
allfieldsGer	10.3390/s21237930 doi (DE-627)DOAJ025735055 (DE-599)DOAJ1e0a192dd9374bf7b0d8e8cb751ea068 DE-627 ger DE-627 rakwb eng TP1-1185 Zhongming Zhang verfasserin aut Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4 Chemical technology Michael D. Aspinall verfasserin aut In Sensors MDPI AG, 2003 21(2021), 23, p 7930 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:21 year:2021 number:23, p 7930 https://doi.org/10.3390/s21237930 kostenfrei https://doaj.org/article/1e0a192dd9374bf7b0d8e8cb751ea068 kostenfrei https://www.mdpi.com/1424-8220/21/23/7930 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 21 2021 23, p 7930
allfieldsSound	10.3390/s21237930 doi (DE-627)DOAJ025735055 (DE-599)DOAJ1e0a192dd9374bf7b0d8e8cb751ea068 DE-627 ger DE-627 rakwb eng TP1-1185 Zhongming Zhang verfasserin aut Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4 Chemical technology Michael D. Aspinall verfasserin aut In Sensors MDPI AG, 2003 21(2021), 23, p 7930 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:21 year:2021 number:23, p 7930 https://doi.org/10.3390/s21237930 kostenfrei https://doaj.org/article/1e0a192dd9374bf7b0d8e8cb751ea068 kostenfrei https://www.mdpi.com/1424-8220/21/23/7930 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 21 2021 23, p 7930
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author	Zhongming Zhang
spellingShingle	Zhongming Zhang misc TP1-1185 misc interaction of radiation with matter misc neutron detection misc semiconductor misc charge collection efficiency misc radiation-hard detectors misc Geant4 misc Chemical technology Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4
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topic_title	TP1-1185 Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4 interaction of radiation with matter neutron detection semiconductor charge collection efficiency radiation-hard detectors Geant4
topic	misc TP1-1185 misc interaction of radiation with matter misc neutron detection misc semiconductor misc charge collection efficiency misc radiation-hard detectors misc Geant4 misc Chemical technology
topic_unstemmed	misc TP1-1185 misc interaction of radiation with matter misc neutron detection misc semiconductor misc charge collection efficiency misc radiation-hard detectors misc Geant4 misc Chemical technology
topic_browse	misc TP1-1185 misc interaction of radiation with matter misc neutron detection misc semiconductor misc charge collection efficiency misc radiation-hard detectors misc Geant4 misc Chemical technology
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4
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title_full	Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4
author_sort	Zhongming Zhang
journal	Sensors
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lang_code	eng
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author_browse	Zhongming Zhang Michael D. Aspinall
container_volume	21
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format_se	Elektronische Aufsätze
author-letter	Zhongming Zhang
doi_str_mv	10.3390/s21237930
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title_sort	comparison of neutron detection performance of four thin-film semiconductor neutron detectors based on geant4
callnumber	TP1-1185
title_auth	Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4
abstract	Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.
abstractGer	Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.
abstract_unstemmed	Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<2</mn<</msub<</semantics<</math<</inline-formula<O<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<3</mn<</msub<</semantics<</math<</inline-formula<) and gallium nitride (GaN), and the converter layer materials are boron carbide (B<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msub<<mrow<</mrow<<mn<4</mn<</msub<</semantics<</math<</inline-formula<C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.
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title_short	Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4
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