Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...
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Gespeichert in:

Autor*in:	Moath Alathbah [verfasserIn] Khaled Elgaid [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 13(2022), 11, p 2007
Übergeordnetes Werk:	volume:13 ; year:2022 ; number:11, p 2007

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi13112007

Katalog-ID:	DOAJ02578255X

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520			\|a In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
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allfieldsSound	10.3390/mi13112007 doi (DE-627)DOAJ02578255X (DE-599)DOAJ66b6381ee6274a99a7bf2c419d74ff4b DE-627 ger DE-627 rakwb eng TJ1-1570 Moath Alathbah verfasserin aut Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance. AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch Mechanical engineering and machinery Khaled Elgaid verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 11, p 2007 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:11, p 2007 https://doi.org/10.3390/mi13112007 kostenfrei https://doaj.org/article/66b6381ee6274a99a7bf2c419d74ff4b kostenfrei https://www.mdpi.com/2072-666X/13/11/2007 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 11, p 2007
language	English
source	In Micromachines 13(2022), 11, p 2007 volume:13 year:2022 number:11, p 2007
sourceStr	In Micromachines 13(2022), 11, p 2007 volume:13 year:2022 number:11, p 2007
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch Mechanical engineering and machinery
isfreeaccess_bool	true
container_title	Micromachines
authorswithroles_txt_mv	Moath Alathbah @@aut@@ Khaled Elgaid @@aut@@
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callnumber-first	T - Technology
author	Moath Alathbah
spellingShingle	Moath Alathbah misc TJ1-1570 misc AlGaN/GaN HEMTs misc device isolation misc AlGaN/AlN/GaN HEMTs misc planar gatefeed misc gate leakage misc HEMT mesa etch misc Mechanical engineering and machinery Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
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topic_title	TJ1-1570 Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch
topic	misc TJ1-1570 misc AlGaN/GaN HEMTs misc device isolation misc AlGaN/AlN/GaN HEMTs misc planar gatefeed misc gate leakage misc HEMT mesa etch misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc AlGaN/GaN HEMTs misc device isolation misc AlGaN/AlN/GaN HEMTs misc planar gatefeed misc gate leakage misc HEMT mesa etch misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc AlGaN/GaN HEMTs misc device isolation misc AlGaN/AlN/GaN HEMTs misc planar gatefeed misc gate leakage misc HEMT mesa etch misc Mechanical engineering and machinery
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
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title_full	Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
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title_sort	miniature mesa extension for a planar submicron algan/gan hemt gate formation
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title_auth	Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
abstract	In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
abstractGer	In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
abstract_unstemmed	In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
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container_issue	11, p 2007
title_short	Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
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up_date	2024-07-03T17:04:53.067Z
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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

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