Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications

The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−S...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Serhii Stepenko [verfasserIn] Oleksandr Husev [verfasserIn] Dmitri Vinnikov [verfasserIn] Carlos Roncero-Clemente [verfasserIn] Sergio Pires Pimentel [verfasserIn] Elena Santasheva [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 12(2019), 13, p 2509
Übergeordnetes Werk:	volume:12 ; year:2019 ; number:13, p 2509

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en12132509

Katalog-ID:	DOAJ02581348X

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allfields	10.3390/en12132509 doi (DE-627)DOAJ02581348X (DE-599)DOAJ517c28e7e20d4d12944367d763bdf86a DE-627 ger DE-627 rakwb eng Serhii Stepenko verfasserin aut Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies Technology T Oleksandr Husev verfasserin aut Dmitri Vinnikov verfasserin aut Carlos Roncero-Clemente verfasserin aut Sergio Pires Pimentel verfasserin aut Elena Santasheva verfasserin aut In Energies MDPI AG, 2008 12(2019), 13, p 2509 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:12 year:2019 number:13, p 2509 https://doi.org/10.3390/en12132509 kostenfrei https://doaj.org/article/517c28e7e20d4d12944367d763bdf86a kostenfrei https://www.mdpi.com/1996-1073/12/13/2509 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2019 13, p 2509
spelling	10.3390/en12132509 doi (DE-627)DOAJ02581348X (DE-599)DOAJ517c28e7e20d4d12944367d763bdf86a DE-627 ger DE-627 rakwb eng Serhii Stepenko verfasserin aut Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies Technology T Oleksandr Husev verfasserin aut Dmitri Vinnikov verfasserin aut Carlos Roncero-Clemente verfasserin aut Sergio Pires Pimentel verfasserin aut Elena Santasheva verfasserin aut In Energies MDPI AG, 2008 12(2019), 13, p 2509 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:12 year:2019 number:13, p 2509 https://doi.org/10.3390/en12132509 kostenfrei https://doaj.org/article/517c28e7e20d4d12944367d763bdf86a kostenfrei https://www.mdpi.com/1996-1073/12/13/2509 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2019 13, p 2509
allfields_unstemmed	10.3390/en12132509 doi (DE-627)DOAJ02581348X (DE-599)DOAJ517c28e7e20d4d12944367d763bdf86a DE-627 ger DE-627 rakwb eng Serhii Stepenko verfasserin aut Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies Technology T Oleksandr Husev verfasserin aut Dmitri Vinnikov verfasserin aut Carlos Roncero-Clemente verfasserin aut Sergio Pires Pimentel verfasserin aut Elena Santasheva verfasserin aut In Energies MDPI AG, 2008 12(2019), 13, p 2509 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:12 year:2019 number:13, p 2509 https://doi.org/10.3390/en12132509 kostenfrei https://doaj.org/article/517c28e7e20d4d12944367d763bdf86a kostenfrei https://www.mdpi.com/1996-1073/12/13/2509 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2019 13, p 2509
allfieldsGer	10.3390/en12132509 doi (DE-627)DOAJ02581348X (DE-599)DOAJ517c28e7e20d4d12944367d763bdf86a DE-627 ger DE-627 rakwb eng Serhii Stepenko verfasserin aut Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies Technology T Oleksandr Husev verfasserin aut Dmitri Vinnikov verfasserin aut Carlos Roncero-Clemente verfasserin aut Sergio Pires Pimentel verfasserin aut Elena Santasheva verfasserin aut In Energies MDPI AG, 2008 12(2019), 13, p 2509 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:12 year:2019 number:13, p 2509 https://doi.org/10.3390/en12132509 kostenfrei https://doaj.org/article/517c28e7e20d4d12944367d763bdf86a kostenfrei https://www.mdpi.com/1996-1073/12/13/2509 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2019 13, p 2509
allfieldsSound	10.3390/en12132509 doi (DE-627)DOAJ02581348X (DE-599)DOAJ517c28e7e20d4d12944367d763bdf86a DE-627 ger DE-627 rakwb eng Serhii Stepenko verfasserin aut Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies Technology T Oleksandr Husev verfasserin aut Dmitri Vinnikov verfasserin aut Carlos Roncero-Clemente verfasserin aut Sergio Pires Pimentel verfasserin aut Elena Santasheva verfasserin aut In Energies MDPI AG, 2008 12(2019), 13, p 2509 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:12 year:2019 number:13, p 2509 https://doi.org/10.3390/en12132509 kostenfrei https://doaj.org/article/517c28e7e20d4d12944367d763bdf86a kostenfrei https://www.mdpi.com/1996-1073/12/13/2509 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2019 13, p 2509
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author	Serhii Stepenko
spellingShingle	Serhii Stepenko misc DC–AC converters misc efficiency misc neutral-point-clamped inverter misc PV applications misc PV inverters misc PV systems misc quasi-z-source misc two-level inverter misc three-level inverter misc converter topologies misc Technology misc T Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
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topic_title	Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies
topic	misc DC–AC converters misc efficiency misc neutral-point-clamped inverter misc PV applications misc PV inverters misc PV systems misc quasi-z-source misc two-level inverter misc three-level inverter misc converter topologies misc Technology misc T
topic_unstemmed	misc DC–AC converters misc efficiency misc neutral-point-clamped inverter misc PV applications misc PV inverters misc PV systems misc quasi-z-source misc two-level inverter misc three-level inverter misc converter topologies misc Technology misc T
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title	Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
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title_full	Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
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title_sort	experimental comparison of two-level full-sic and three-level si–sic quasi-z-source inverters for pv applications
title_auth	Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
abstract	The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.
abstractGer	The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.
abstract_unstemmed	The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.
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title_short	Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
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Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications

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